RTM400FF75A8H IGBT Module

RTM400FF75A8H IGBT Module

RTM400FF75A8H IGBT Module

Product catalog summary
Overview: The document provides preliminary data for the RTM400FF75A8H IGBT Module by Rongtech, highlighting its features, applications, and technical specifications.
Features: The module includes a Field Stop Trench Gate IGBT, is short circuit rated for over 10μs, and offers low saturation voltage and switching loss. It is 100% RBSOA tested and complies with RoHS requirements.
Applications: Suitable for high power converters, UPS systems, and motor drives.
Maximum Rated Values: The module operates with a collector-emitter blocking voltage of 750V and a gate-emitter voltage of ±20V. It supports a continuous collector current of 400A at 100°C and 560A at 25°C, with a peak collector current of 800A at 175°C.
Electrical Characteristics: The document details static and switching characteristics, including gate-emitter threshold voltage, collector-emitter saturation voltage, and various capacitance values. It also provides switching loss data at different junction temperatures.
Diode Characteristics: The diode within the module has a repetitive peak reverse voltage of 750V and a continuous forward current of 400A. Forward voltage and reverse recovery characteristics are specified.
Thermal Characteristics: Thermal resistance values for both the IGBT and diode are provided, along with NTC-thermistor characteristics.
Module Specifications: Includes isolation voltage, maximum junction temperature, storage temperature, and mechanical specifications such as screw torque and weight.
Graphs and Figures: The document includes graphs illustrating saturation voltage characteristics, forward characteristics, switching loss versus collector and forward current, and thermal impedance.
Disclaimer: Rongtech states that the information is believed to be accurate but does not guarantee its completeness or accuracy and reserves the right to make changes without notice.
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Catalog excerpts

RTM400FF75A8H IGBT Module-1

Preliminary Data IGBT Module Field Stop Trench Gate IGBT Lead Free, Compliant with RoHS Requirement High Power Converters Motor Drives IGBT, Inverter Maximum Rated Values(TC=25℃unless otherwise specified) VCES Collector-Emitter Blocking Voltage Gate-Emitter Voltage Continuous Collector Current TC = 25℃ Peak Collector Current Repetitive Short Circuit Withstand Time Maximum Power Dissipation (IGBT) www.rongtechpower.com 2018 Rongtech All rights reserved

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RTM400FF75A8H IGBT Module-2

Electrical Characteristics of IGBT (TC=25℃unless otherwise specified) Static Characteristics Symbol Gate-Emitter Threshold Voltage TJ=25℃ Collector-Emitter Saturation Voltage Collector-Emitter Leakage Current Gate-Emitter Leakage Current Output Capacitance Input Capacitance Reveres Transfer Capacitance VCC=300V,IC=400A, RGoff =0Ω,VGE=±15V, Inductive Load tf Fall Time Turn-on Switching Loss VCC=300V,IC=400A, RGon =0Ω,VGE= ±15V, di/dt =1460A/μs(TJ=150℃) Inductive Load www.rongtechpower.com 2018 Rongtech All rights reserved Turn-off Delay Time Rise Time Turn-on Delay Time

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RTM400FF75A8H IGBT Module-3

Diode, Inverter Maximum Rated Values (TC=25°Cunless otherwise specified) Vrrm www.rongtechpower.com 2018 Rongtech All rights reserved

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RTM400FF75A8H IGBT Module-4

NTC-Thermistor Characteristic values R25 www.rongtechpower.com 2018 Rongtech All rights reserved

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RTM400FF75A8H IGBT Module-5

Fig.1 Typical Saturation Voltage Characteristics 800 Fig.2 Typical Output Characteristics 10 www.rongtechpower.com 2018 Rongtech All rights reserved

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RTM400FF75A8H IGBT Module-6

VR=300V,VGE=-15V, RGon=0ohm, Induction Load Erec Tj=125℃ Erec Tj=150℃ Fig.5 Typical Switching Loss vs. Collector Current Fig.6 Typical Switching Loss vs. Forward Current VR=300V,VGE=-15V, IF=400A Induction Load Erec Tj=125℃ Erec Tj=150℃ Fig.7 Typical Switching Loss vs. Gate Resistance www.rongtechpower.com 2018 Rongtech All rights reserved Fig.8 Typical Switching Loss vs. Gate Resistance

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RTM400FF75A8H IGBT Module-7

time(s) Fig.9 Transient Thermal Impedance (IGBT) Fig.10 Transient Thermal Impedance (Diode) VCES(V) Fig.11 Reverse Bias Safe Operation Area (RBSOA) www.rongtechpower.com 2018 Rongtech All rights reserved

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RTM400FF75A8H IGBT Module-8

Internal Circuit Package Outline (Unit: mm): RTM400FF75A8H www.rongtechpower.com 2018 Rongtech All rights reserved

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RTM400FF75A8H IGBT Module-9

Announcement Information in this document is believed to be accurate and reliable. However, Rongtech does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to Make Changes Rongtech reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication...

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