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RTK600SG120B

Product catalog summary

Overview: The GPK600SG120D2 is a 1200V/600A single switch IGBT module designed for applications such as motor drives and inverters. It features lower losses, higher energy efficiency, and excellent short circuit ruggedness in a 62mm single module.

Specifications:

Voltage and Current Ratings: Collector to Emitter Voltage (VCES) is 1200V, Continuous Collector Current (IC) is 1200A at 25°C and 600A at 100°C.
Temperature Ratings: Maximum Junction Temperature (TJ) is 150°C, Operating Junction Temperature Range is -40 to +150°C, and Storage Temperature Range is -40 to +125°C.
Power Dissipation: Maximum Power Dissipation (PD) is 2660W at 25°C.

Electrical Characteristics:

IGBT Characteristics: Collector to Emitter Breakdown Voltage is 1200V, Gate Threshold Voltage ranges from 4.5V to 5.7V, and Collector to Emitter Saturation Voltage is 2.1V at 25°C.
Switching Characteristics: Turn-on Delay Time is 150ns at 25°C, Turn-off Delay Time is 890ns at 25°C, and Total Gate Charge is 5000nC.
Diode Characteristics: Forward Voltage is 1.90V at 25°C, Reverse Recovery Time is 230ns at 25°C, and Reverse Recovery Charge is 56.5uC at 25°C.

Thermal and Mechanical Characteristics:

Thermal Resistance: Junction-to-Case Thermal Resistance for IGBT is 0.047°C/W and for Diode is 0.057°C/W.
Isolation Voltage: 2500V for all terminals shorted at 50Hz for 1 minute.
Mechanical Specifications: Power Terminals Screw sizes are M4 and M6 with specified torque ranges, and the module weight is 320g.

Figures and Graphs: The document includes various figures illustrating output characteristics, switching losses, and thermal impedance for both the IGBT and the diode, providing detailed insights into performance under different conditions.

Catalog excerpts

1200V/600A Single Switches Features：     1200V600A,VCE(sat)(typ.)=2.1V Lower losses and higher energy Excellent short circuit ruggedness 62mm single module General Applications： Rongtech's IGBTs offer lower losses and higher energy for application such as motor drive ,inverter and other soft switching applications. Equivalent Circuit Schematic Absolute Maximum Ratings of IGBT VCES Collector to Emitter Voltage Continuous Gate to Emitter Voltage Continuous Collector Current Pulse Collector Current Maximum Power Dissipation (IGBT) Short Circuit Withstand Time Maximum IGBT Junction Temperature Maximum Operating Junction Temperature Range Storage Temperature Range Absolute Maximum Ratings of Freewheeling Diode VRRM Repetitive Peak Reverse Voltage Preliminary Data Diode Continuous Forward Current Diode Maximum Forward Current

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Electrical Characteristics of IGBT at TJ = 25° (Unless Otherwise Specified) C Parameter Test Conditions Collector to Emitter Breakdown Voltage Collector to Emitter Leakage Current Gate to Emitter Leakage Current Gate Threshold Voltage Collector to Emitter Saturation Voltage (Module Level) Switching Characteristics of IGBT TJ = 25° C TJ = 125° C Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time Turn-on Switching Loss Turn-off Switching Loss Total Gate Charge Integrated gate resistor Input Capacitance Output Capacitance Reverse Transfer Capacitance Thermal Resistance,...

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Electrical and Switching Characteristics of Freewheeling Diode VF Diode Forward Voltage Diode Peak Reverse Recovery Current Diode Reverse Recovery Energy Diode Reverse Recovery Charge Diode Reverse Recovery Time Thermal Resistance, Junction-to-Case (Diode) Module Characteristics Parameter Isolation Voltage (All Terminals Shorted),f = 50Hz, 1minute Case-To-Sink(Conductive Grease Applied) Power Terminals Screw: M4 Power Terminals Screw: M6

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Fig 1. output characteristic IGBT， IC=f(VCE),VGE=15V Fig 2. output characteristic IGBT， IC=f(VCE),Tj=125℃ Fig 3. transfer characteristic IGBT， IC=f(VGE),VCE=20V Fig 4. switching losses IGBT, Eon=f(Ic),Eoff=f(Ic), VGE=± 15V,RGon=1.1Ω,RGoff=1.1Ω,VCE=600V

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Fig 5. switching losses IGBT, Eon=f(RG),Eoff=f(RG), VGE=± 15V,IC=600A,VCE=600V Fig 7. reverse bias safe operating area IGBT, IC=f(VCE),VGE=± 15V,RGoff=1.1Ω，Tvj=125℃ Fig 6. transient thermal impedance IGBT , Zthjc=f(t) Fig 8. forward characteristic of Diode ，

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