Catalog excerpts
1200V/400A Single Switches Features: 1200V400A,VCE(sat)(typ.)=2.1V Lower losses and higher energy Excellent short circuit ruggedness 62mm single module General Applications: Rongtech's IGBTs offer lower losses and higher energy for application such as motor drive ,inverter and other soft switching applications. Equivalent Circuit Schematic Absolute Maximum Ratings of IGBT VCES Collector to Emitter Voltage Continuous Gate to Emitter Voltage Continuous Collector Current Pulse Collector Current Maximum Power Dissipation (IGBT) Short Circuit Withstand Time Maximum IGBT Junction Temperature Maximum Operating Junction Temperature Range Storage Temperature Range Absolute Maximum Ratings of Freewheeling Diode VRRM Repetitive Peak Reverse Voltage Preliminary Data Diode Continuous Forward Current Diode Maximum Forward Current
Open the catalog to page 1Electrical Characteristics of IGBT at TJ = 25° (Unless Otherwise Specified) C Parameter Test Conditions Collector to Emitter Breakdown Voltage Collector to Emitter Leakage Current Gate to Emitter Leakage Current Gate Threshold Voltage Collector to Emitter Saturation Voltage (Module Level) Switching Characteristics of IGBT TJ = 25° C TJ = 125° C Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time Turn-on Switching Loss Turn-off Switching Loss Total Gate Charge Integrated gate resistor Input Capacitance Output Capacitance Reverse Transfer Capacitance Thermal...
Open the catalog to page 2Electrical and Switching Characteristics of Freewheeling Diode VF Diode Forward Voltage Diode Peak Reverse Recovery Current Diode Reverse Recovery Energy Diode Reverse Recovery Charge Diode Reverse Recovery Time Thermal Resistance, Junction-to-Case (Diode) Module Characteristics Parameter Isolation Voltage (All Terminals Shorted),f = 50Hz, 1minute Case-To-Sink(Conductive Grease Applied) Power Terminals Screw: M4 Power Terminals Screw: M6
Open the catalog to page 3Fig 1. output characteristic IGBT, IC=f(VCE),VGE=15V Fig 2. output characteristic IGBT, IC=f(VCE),Tj=125℃ Fig 3. transfer characteristic IGBT, IC=f(VGE),VCE=20V Fig 4. switching losses IGBT, Eon=f(Ic),Eoff=f(Ic), VGE=± 15V,RGon=2.2Ω,RGoff=2.2Ω,VCE=600V
Open the catalog to page 4Fig 5. switching losses IGBT, Eon=f(RG),Eoff=f(RG), VGE=± 15V,IC=400A,VCE=600V Fig 7. reverse bias safe operating area IGBT, IC=f(VCE),VGE=± 15V,RGoff=2.2Ω,Tj=125℃ Fig 6. transient thermal impedance IGBT , Zthjc=f(t) Fig 8. forward characteristic of Diode , IF=f(VF)
Open the catalog to page 5Fig 9. switching losses Diode, Err=f(IF),,RGon=2.2Ω,VCE=600V Fig 10. switching losses Diode, Err=f(RG),IF=400A,VCE=600V
Open the catalog to page 6Internal Circuit: Package Dimension Dimensions in Millimeters
Open the catalog to page 7All Rongtech Industry (Shanghai) Inc. catalogs and technical brochures
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