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RTK400SG120B

Product catalog summary

Overview: The document provides technical specifications and characteristics for the GPK400SG120D2, a 1200V/400A single switch IGBT module by Rongtech Industry (Shanghai) Inc. It is designed for applications such as motor drives and inverters, offering lower losses and higher energy efficiency.

Features:

1200V/400A with a typical VCE(sat) of 2.1V.
High energy efficiency and short circuit ruggedness.
Single module with a 62mm size.

Absolute Maximum Ratings:

IGBT: VCES of 1200V, VGES of ±30V, continuous collector current of 800A at 25°C and 400A at 100°C, and a maximum junction temperature of 150°C.
Freewheeling Diode: VRRM of 1200V, continuous forward current of 800A at 25°C and 400A at 100°C.

Electrical Characteristics:

IGBT: Breakdown voltage of 1200V, leakage current of 5mA, and gate threshold voltage between 4.5V and 5.7V.
Switching Characteristics: Turn-on delay time of 150ns at 25°C, turn-off delay time of 860ns at 25°C, and total gate charge of 3480nC.
Freewheeling Diode: Forward voltage of 1.90V at 25°C, reverse recovery time of 180ns at 25°C, and reverse recovery energy of 12.0mJ at 25°C.

Module Characteristics:

Isolation voltage of 2500V, thermal resistance junction-to-case of 0.072°C/W for IGBT and 0.078°C/W for the diode.
Power terminal screws and mounting screws have specified torque values.

Figures and Graphs:

Figures illustrate output characteristics, switching losses, and thermal impedance for both IGBT and diode components.

Catalog excerpts

1200V/400A Single Switches Features：     1200V400A,VCE(sat)(typ.)=2.1V Lower losses and higher energy Excellent short circuit ruggedness 62mm single module General Applications： Rongtech's IGBTs offer lower losses and higher energy for application such as motor drive ,inverter and other soft switching applications. Equivalent Circuit Schematic Absolute Maximum Ratings of IGBT VCES Collector to Emitter Voltage Continuous Gate to Emitter Voltage Continuous Collector Current Pulse Collector Current Maximum Power Dissipation (IGBT) Short Circuit Withstand Time Maximum IGBT Junction Temperature Maximum Operating Junction Temperature Range Storage Temperature Range Absolute Maximum Ratings of Freewheeling Diode VRRM Repetitive Peak Reverse Voltage Preliminary Data Diode Continuous Forward Current Diode Maximum Forward Current

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Electrical Characteristics of IGBT at TJ = 25° (Unless Otherwise Specified) C Parameter Test Conditions Collector to Emitter Breakdown Voltage Collector to Emitter Leakage Current Gate to Emitter Leakage Current Gate Threshold Voltage Collector to Emitter Saturation Voltage (Module Level) Switching Characteristics of IGBT TJ = 25° C TJ = 125° C Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time Turn-on Switching Loss Turn-off Switching Loss Total Gate Charge Integrated gate resistor Input Capacitance Output Capacitance Reverse Transfer Capacitance Thermal Resistance,...

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Electrical and Switching Characteristics of Freewheeling Diode VF Diode Forward Voltage Diode Peak Reverse Recovery Current Diode Reverse Recovery Energy Diode Reverse Recovery Charge Diode Reverse Recovery Time Thermal Resistance, Junction-to-Case (Diode) Module Characteristics Parameter Isolation Voltage (All Terminals Shorted),f = 50Hz, 1minute Case-To-Sink(Conductive Grease Applied) Power Terminals Screw: M4 Power Terminals Screw: M6

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Fig 1. output characteristic IGBT， IC=f(VCE),VGE=15V Fig 2. output characteristic IGBT， IC=f(VCE),Tj=125℃ Fig 3. transfer characteristic IGBT， IC=f(VGE),VCE=20V Fig 4. switching losses IGBT, Eon=f(Ic),Eoff=f(Ic), VGE=± 15V,RGon=2.2Ω,RGoff=2.2Ω,VCE=600V

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Fig 5. switching losses IGBT, Eon=f(RG),Eoff=f(RG), VGE=± 15V,IC=400A,VCE=600V Fig 7. reverse bias safe operating area IGBT, IC=f(VCE),VGE=± 15V,RGoff=2.2Ω，Tj=125℃ Fig 6. transient thermal impedance IGBT , Zthjc=f(t) Fig 8. forward characteristic of Diode ， IF=f(VF)

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