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RT25PI120B9H PIM module

Product catalog summary

Overview: The RT25PI120B9H is a 1200V/25A Power Integrated Module (PIM) featuring advanced Trench + Field Stop IGBT technology. It is designed for applications such as motor drive inverters, AC and DC servo drive amplifiers, and uninterruptible power supplies.

Key Features:

10μs short circuit capability
Positive temperature coefficient for VCE(sat)
Low inductance case
Fast and soft reverse recovery anti-parallel FWD
Isolated copper baseplate using DBC technology

Absolute Maximum Ratings:

Collector-Emitter Voltage (VCES): 1200V
Gate-Emitter Voltage (VGES): ±20V
Collector Current (IC): 50A at TC=25℃, 25A at TC=100℃
Pulsed Collector Current (ICM): 50A
Maximum Power Dissipation (PD): 190W at Tj=175℃

Diode Characteristics:

Repetitive Peak Reverse Voltage (VRRM): 1200V for inverter, 1600V for rectifier
Diode Continuous Forward Current (IF): 25A for inverter, 30A for rectifier
Surge Forward Current (IFSM): 360A for rectifier

IGBT Characteristics:

Collector to Emitter Saturation Voltage (VCE(sat)): 2.05V at Tj=25℃, 1.95V at Tj=125℃
Gate-Emitter Threshold Voltage (VGE(th)): 5.0V to 7.0V
Turn-On Delay Time (td(on)): 33ns
Turn-Off Delay Time (td(off)): 203ns

Thermal and Mechanical Characteristics:

Maximum Junction Temperature: 150℃
Operating Junction Temperature: -40 to +150℃
Storage Temperature Range: -40 to +125℃
Isolation Voltage: 2500V RMS
Weight of Module: 39g

Graphs and Figures: The document includes various graphs illustrating the output characteristics, switching losses, and thermal impedance of the IGBT and diode components, as well as package dimensions and circuit schematics.

Catalog excerpts

Rongtech Industry(ShangHai)Inc., Trench + Filed Stop IGBT technology 10μs short circuit capability VCE(sat) with positive temperature coefficient Low inductance case Fast & soft reverse recovery anti-parallel FWD Isolated copper baseplate using DBC technology Inverter for motor drive AC and DC servo drive amplifier Uninterruptible power supply

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Rongtech Industry(ShangHai)Inc., Absolute Maximum Ratings TC=25℃ unless otherwise noted IGBT-inverter Symbol VCES VGES IC ICM PD Description Collector-Emitter Voltage Gate-Emitter Voltage Collector Current @ TC=25℃ @ TC=100℃ Pulsed Collector Current tp=1ms Maximum Power Dissipation @ Tj=175℃ Diode-inverter Symbol VRRM IF IFM Description Repetitive Peak Reverse Voltage Diode Continuous Forward Current Diode Maximum Forward Current tp=1ms Diode-rectifier Symbol VRRM IO IFSM I2t Description Repetitive Peak Reverse Voltage Average Output Current 50Hz/60Hz,sine wave Surge Forward Current VR=0V,tp=10ms,Tj=45℃...

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Rongtech Industry(ShangHai)Inc. Technical Information1200V 25A

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Rongtech Industry(ShangHai)Inc. Technical Information 1200V 25 A

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IGBT-brake Characteristics Tc=25°C unless otherwise noted

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Rongtech Industry(ShangHai)Inc., Technical Information 1200V 25 A Diode-brake Characteristics Tc=25°C unless otherwise noted Http://www.ron gtech-sensor.com

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Rongtech Industry(ShangHai)Inc., Fig 1. IGBT-inverter Output Characteristics Fig 2. IGBT-inverter Transfer Characteristics Fig 3. IGBT-inverter Switching Loss vs. IC Fig 4. IGBT-inverter Switching Loss vs. RG

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Rongtech Industry(ShangHai)Inc., Fig 5. IGBT-inverter RBSOA Thermal Impedance Fig 7. Diode-inverter Forward Characteristics Fig 8. Diode-inverter Switching Loss vs. IF

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Fig 9. Diode-inverter Switching Loss vs. RG Rongtech Industry(ShangHai)Inc., Fig 10. Diode-inverter Transient Thermal Impedance Fig 11. Diode-rectifier Forward Characteristics Fig 12. IGBT-brake-chopper Output Characteristics

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