Field Stop Trench Gate IGBT Short Circuit Rated ＞10μs Lead Free, Compliant with RoHS Requirement Industrial Inverters Servo Applications IGBT, Inverter Maximum Rated Values of IGBT(TC=25℃ unless otherwise specified) VCES Collector-Emitter Blocking Voltage Gate-Emitter Voltage Continuous Collector Current Repetitive Peak Collector Current Short Circuit Withstand Time Maximum Power Dissipation per IGBT www.rongtechpower.com 2020 Rongtech All rights reserved

Electrical Characteristics of IGBT (TC=25℃ unless otherwise specified) Static Characteristics Symbol Gate-Emitter Threshold Voltage TJ=25℃ Collector-Emitter Saturation Voltage Collector-Emitter Leakage Current Gate-Emitter Leakage Current Output Capacitance Input Capacitance Reverse Transfer Capacitance VCC = 600V,IC =25A, RGon = 15Ω,VGE = ±15V, di/dt=889A/μs ( TJ =150℃) Inductive Load VCC = 600V,IC =25A, RGoff = 15Ω,VGE = ±15V, du/dt=1451V/μs ( TJ=150℃) Inductive Load Turn-on Delay Time VCC = 600V,IC =25A, RGon = 15Ω,VGE = ±15V, Inductive Load Rise Time Turn-off Delay Time VCC = 600V,IC =25A,...

Total Gate Charge IGBT Thermal Resistance: Junction-To-Case(per leg) Diode, Inverter Maximum Rated Values (TC=25℃ unless otherwise specified) VRRM Repetitive Peak Reverse Voltage Diode Continuous Forward Current Diode Maximum Forward Current Electrical Characteristics of FWD (TC=25℃ unless otherwise specified) Symbol Reverse Recovery Energy Diode Thermal Resistance: Junction-To-Case (per leg) www.rongtechpower.com 2020 Rongtech All rights reserved Reverse Recovery Charge TJ=25℃ Peak Reverse Recovery Current Reverse Recovery Time Forward Voltage

IGBT, Brake-Chopper Maximum Rated Values (TC=25℃unless otherwise specified) VCES Collector-Emitter Blocking Voltage Gate-Emitter Voltage Continuous Collector Current Repetitive Peak Collector Current Short Circuit Withstand Time Maximum Power Dissipation per IGBT Electrical Characteristics of IGBT (TC=25℃ unless otherwise specified) Static Characteristics Symbol Gate-Emitter Threshold Voltage Collector-Emitter Saturation Voltage Collector-Emitter Leakage Current Gate-Emitter Leakage Current Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics td(on) Turn-on...

VCC = 600V,IC =15A, RGon = 20Ω,VGE = ±15V, di/dt=498A/μs ( TJ=125℃) Inductive Load VCC = 600V,IC =15A, RGoff = 20Ω,VGE = ±15V, du/dt=2314V/μs ( TJ=125℃) Inductive Load Turn-on Switching Loss Turn-off Switching Loss Total Gate Charge IGBT Thermal Resistance: Junction-To-Case(per leg) Diode, Brake-Chopper Maximum Rated Values (TC=25℃unless otherwise specified) VRRM Repetitive Peak Reverse Voltage Diode Continuous Forward Current Diode Maximum Forward Current Electrical Characteristics of FWD (TC=25℃unless otherwise specified) Symbol Forward Voltage Reverse Recovery Time Peak Reverse Recovery Current...

Diode, Rectifier Maximum Rated Values (TC=25℃unless otherwise specified) VRRM Repetitive Peak Reverse Voltage Maximum RMS Forward Current per Chip Maximum RMS Current at Rectifier Output Electrical Characteristics of Diode (TC=25℃unless otherwise specified) TJ =25℃ Forward Voltage Reverse Current Diode Thermal Resistance: Junction-To-Case Internal NTC-Thermistor Characteristics R25

Module Symbol Isolation Voltage (All Terminals Shorted) Stray Inductance Module Maximum Junction Temperature Maximum Operating Junction Temperature Range Storage Temperature Comparative Tracking Index Case-To-Sink Thermally (Conductive Grease Applied) www.rongtechpower.com 2020 Rongtech All rights reserved

Fig.1 Typical Saturation Voltage Characteristics 50 Fig.2 Typical Output Characteristics 50 www.rongtechpower.com 2020 Rongtech All rights reserved

VCC =600V,VGE =± 15V, RGon =15ohm,R Goff=15ohm, Induction Load Eon TJ=125 ℃ Eon TJ=150 ℃ Eoff TJ=125℃ Eoff TJ=150℃ Fig.5 Typical Switching Loss vs. Collector Current 10 VR=600V,V GE= ± 15V, IF=25A,Induction Load Erec TJ=125℃ Erec TJ=150℃ Fig.6 Typical Switching Loss vs. Forward Current VCC =600V,VGE =-15V, IC =25A,Induction Load Eon TJ=125 ℃ Eon TJ=150℃ Eoff TJ=125℃ Eoff TJ=150℃ Fig.7 Typical Switching Loss vs. Gate Resistance www.rongtechpower.com 2020 Rongtech All rights reserved Fig.8 Typical Switching Loss vs. Gate Resistance

Fig.9 Transient Thermal Impedance (IGBT) 30 Fig.10 Transient Thermal Impedance (Diode) 30 Fig.11Typical Saturation Voltage Characteristics (Brake-Chopper) www.rongtechpower.com 2020 Rongtech All rights reserved Fig.12 Forward Characteristics of Diode (Brake-Chopper)

VGE = 0V ,f=1MHz Cies Coes Cres Fig.13 Forward Characteristics of Diode (Rectifier) Fig.15 Reverse Bias Safe Operation Area (RBSOA) www.rongtechpower.com 2020 Rongtech All rights reserved

Internal Circuit Package Outline (Unit: mm): www.rongtechpower.com 2020 Rongtech All rights reserved

Notes Final Version. Changed Mounting Torque. Announcement Information in this document is believed to be accurate and reliable. However, Rongtech does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to Make Changes Rongtech reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces...