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RT10PI120B3H PIM module

RT10PI120B3H PIM module
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Rongtech Industry(ShangHai)Inc., Trench + Filed Stop IGBT technology 10μs short circuit capability VCE(sat) with positive temperature coefficient Fast & soft reverse recovery anti-parallel FWD Isolated copper baseplate using DBC technology Inverter for motor drive

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Rongtech Industry(ShangHai)Inc., Absolute Maximum Ratings TC=25℃,unless otherwise noted IGBT-inverter Symbol VCES VGES Description Repetitive Peak Reverse Voltage Average Output Current, 50Hz/60Hz,sine wave Surge Forward Current VR=0V,tp=10ms,Tj=45℃ I2t-value, VR=0V,t p=10ms,Tj=45℃ Description Collector-Emitter Voltage Gate-Emitter Voltage Collector Current @ TC=25℃ @ TC=100℃ Pulsed Collector Current tp=1ms Maximum Power Dissipation Description Repetitive Peak Reverse Voltage Diode Continuous Forward Current Diode Maximum Forward Current tp=1ms Symbol Tjmax Description Maximum...

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Rongtech Industry(ShangHai)Inc., IGBT-inverter Characteristics TC=25℃,unless otherwise noted Symbol VCE(sat) Parameter Collector to Emitter Saturation Voltage Test Conditions Gate-Emitter Threshold Voltage Collector Cut-Off Current Gate-Emitter Leakage Current RGint Cies Cres QG td(on) tr td(off) tf Eon Eoff td(on) tr td(off) tf Eon Eoff ISC Internal Gate Resistance Input Capacitance Reverse Transfer Capacitance Gate Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time...

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Rongtech Industry(ShangHai)Inc., Diode-inverter Characteristics TC=25℃,unless otherwise noted Symbol VF Qr IRM Erec Qr IRM Erec Qr IRM Erec Parameter Diode Forward Vol tage Recovered Charge Peak Reverse VR=600V,IF=10A, Recovery Current RG=82Ω,VGE=-15V Tj=25℃, Reverse Recovery di/dt=600A/us Energy Recovered Charge Peak Reverse VR=600V,IF=10A, Recovery Current RG=82Ω,VGE=-15V Reverse Recovery Tj=125℃, Energy di/dt=600A/us Recovered Charge Peak Reverse VR=600V,IF=10A, Recovery Current Reverse Recovery RG=82Ω,VGE=-15V Tj=150℃ Energy di/dt=600A/us Diode-rectifier Characteristics TC=25℃,unless...

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Rongtech Industry(ShangHai)Inc., IGBT-brake Characteristics TC=25℃,unless otherwise noted Symbol VCE(sat) Parameter Collector to Emitter Saturation Voltage Gate-Emitter Threshold Voltage Collector Cut-Off Current Gate-Emitter Leakage Current Internal Gate Resistance Input Capacitance Reverse Transfer Capacitance Gate Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching IGES RGint Cies Cres QG td(on) tr td(off) tf Eon Eoff td(on) tr td(off) tf Eon Eoff Loss Turn-Off Switching Loss SC Data Turn-Off Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time...

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Rongtech Industry(ShangHai)Inc., Diode-brake Characteristics TC=25℃,unless otherwise noted Symbol VF Qr Parameter Diode Forward Voltage Recovered Charge Peak Reverse VR=600V,IF=10A, Recovery Current Tj=25℃ di/dt=600A/us Reverse Recovery Energy Recovered Charge Peak Reverse VR=600V,IF=10A, Recovery Current Tj=125℃ Reverse Recovery Energy NTC Characteristics TC=25℃,unless otherwise noted Symbol R25 ∆R/R P25 Parameter Rated Resistance Deviation of R100 Power Dissipation Test Conditions Module Characteristics TC=25℃unless otherwise noted Symbol LCE RCC’+EE’ Parameter Stray Inductance Module...

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