SiC MOSFET Module Features：  High-Frequency Operation Zero Reverse Recovery Current from Diode Zero Turn-off Tail Current from MOSFET Normally-off, Fail-safe Device Operation Copper Baseplate and Aluminum Nitride Insulator Motor Drivers Solar and Wind Inverters Absolute Maximum Ratings (TC=25℃unless otherwise specified) Description Drain-Source Voltage Gate-Source Voltage Absolute Maximum values Gate-Source Voltage Recommended Operational Values Continuous Drain Current Pulsed Drain Current Pulse width tp=200us Repetition rate limited by Tjmax,Tc=25℃ Power Dissipation

Electrical Characteristics of MOSFET (TC=25℃ unless otherwise specified) Symbol Drain - Source Breakdown Voltage Gate Threshold Voltage Gate-Source Leakage Current Zero Gate Voltage Drain Current Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Switching Energy Turn-Off Switching Energy Internal Gate Resistance Gate-Source Charge Gate-Drain Chrage Total Gate Chrage Turn-off delay time Rise Time Turn-off delay time Fall Time Thermal Resistance Case for MOSFET www.rongtechpower.com 2015 Rongtech All rights reserved

Junction Temperature, Tj (*C) Fig.5 Typical On-Resistant VS Temperature for Various Gate-Source Voltage Drain Source Current, lD, (A) Fig.6 Typical On-Resistant vs. Drain Current For Various T emperature www.rongtechpower.com 2015 Rongtech All rights reserved

Drain Source Voltage VM(V) Fig.9 Diode Characteristic at -40°C Drain Source Voltage Vw (V) Fig. 11 Diode Characteristic at 150°C www.rongtechpower.com 2015 Rongtech All rights reserved Drain Source Voltage VW(V) Fig. 12 3rd Quadrant Characteristic at -40°C

Fig.15 Typical Gate Charge Characteristic Fig.16 Typical Capacitances VS Drain-Source Voltage (0-200V) Fig.17 Typical Capacitances VS Drain-Source Voltage (0-1KV) Fig.18 Typical Output Capacitor Stored Energy www.rongtechpower.com 2015 Rongtech All rights reserved

Fig.19 Inductive Switching Energy VS Drain Current For VDS=900A,RG=2.5Ω Fig.20 Inductive Switching Energy VS Drain Current For VDS=1200A,RG=2.5Ω Fig.21 Inductive Switching Energy VS RG(ext) Fig.22 Inductive Switching Energy VS Temperature Fig.23 Maximum Power Dissipation (MOSFET) Derating VS Case Temperature Fig.24 Continous Drain Current Derating VS Case Temperature www.rongtechpower.com 2015 Rongtech All rights reserved

Fig.27 MOSFET Junction Case Thermal Impedance Fig.26 Resistive Switching Time Description Fig.28 Diode Junction to Case Thermal Impendence Fig. 29 Maximum Power Dispassion （MOSFET） Derating vs Case Temperature www.rongtechpower.com 2015 Rongtech All rights reserved

Internal Circuit Package Outline (Unit: mm): www.rongtechpower.com 2015 Rongtech All rights reserved

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