RSC300HF120T2NH Preliminary Data SiC MOSFET Module

Product catalog summary

Overview: The document provides preliminary data for the RSC300HF120T2NH SiC MOSFET Module by Rongtech, highlighting its features, applications, and technical specifications.

Features: The module is characterized by ultra-low loss, high-frequency operation, zero reverse recovery current from the diode, zero turn-off tail current from the MOSFET, normally-off fail-safe device operation, ease of paralleling, and a copper baseplate with aluminum nitride insulator.

Applications: It is suitable for induction heating, motor drivers, solar and wind inverters, UPS and SMPS, and traction applications.

Absolute Maximum Ratings: Key parameters include a drain-source voltage of 1200 V, gate-source voltage range of -10/+25 V, continuous drain current up to 404 A at 25°C, and power dissipation of 1660 W at 25°C.

Electrical Characteristics: The MOSFET exhibits a drain-source breakdown voltage of 1.2 V, gate threshold voltage between 1.8 and 2.3 V, and on-state resistance ranging from 5.0 to 9.8 mΩ depending on temperature. Other parameters include input capacitance of 11.7 nF and total gate charge of 1025 nC.

Diode Characteristics: The SiC Schottky diode forward voltage ranges from 1.7 to 2.5 V depending on temperature, with a total capacitive charge of 3.2 μC.

Module Specifications: The module has a junction temperature limit of 150°C, case isolation voltage of 5.0 KV, and a weight of 300 g. Mounting torque is specified at 5 N·m.

Figures and Graphs: The document includes various figures illustrating typical output characteristics, on-resistance vs. temperature, gate charge characteristics, and inductive switching energy among others.

Disclaimer: Rongtech states that the information is believed to be accurate but does not guarantee its completeness or accuracy and reserves the right to make changes without notice.

Catalog excerpts

RSC300HF120T2NH Preliminary Data SiC MOSFET Module-1

Preliminary Data RSC300HF120T2NHSiC MOSFET Module Features: • Ultra Low Loss • High-Frequency Operation • Zero Reverse Recovery Current from Diode • Zero Turn-off Tail Current from MOSFET • Normally-off, Fail-safe Device Operation • Easy of Paralleling • Copper Baseplate and Aluminum Nitride Insulator Applications: • Induction Heating • Motor Drivers • Solar and Wind Inverters www.rongtechpower.com 2015 Rongtech All rights reserved

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RSC300HF120T2NH Preliminary Data SiC MOSFET Module-2

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RSC300HF120T2NH Preliminary Data SiC MOSFET Module-3

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RSC300HF120T2NH Preliminary Data SiC MOSFET Module-4

Fig.1 Typical Output Characteristic Tj=-40℃ Fig.3 Typical Output Characteristic Tj=150℃ Fig.5 Typical On-Resistant VS Temperature for Various Gate-Source voltage www.rongtechpower.com 2015 Rongtech All rights reserved Fig.2 Typical Output Characteristics Tj=25℃ Fig.4 Normalized On-Resistant VS Temperature Fig.6 Typical On-Resistant vs. Gate Voltage

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RSC300HF120T2NH Preliminary Data SiC MOSFET Module-5

Junction Temperature Tj (°C) Fig.7 Threshold Voltage VS Temperature Drain-Source Voltage VK (VI Fig.11 Diode Characteristic at 150°C

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RSC300HF120T2NH Preliminary Data SiC MOSFET Module-6

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RSC300HF120T2NH Preliminary Data SiC MOSFET Module-7

Drain to Source Current, lD5(A) Fig. 19 Inductive Switching Energy VS Drain Current For Vds=600A,Rg=2.5 Q 150 ZOO Z50 Drain to Source Current, lD5 (A) Fig.20 Inductive Switching Energy VS Drain Current For VDS=800A,RG=2.5 Q Junction Temperature, T, (°C) Fig.22 Inductive Switching Energy VS Temperature Case Temperature, Tc ("C] Fig.23 Maximum Power Dissipation (MOSFET) Derating VS Case Temperature

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RSC300HF120T2NH Preliminary Data SiC MOSFET Module-8

Fig.27 MOSFET Junction Case Thermal Impedance www.Rongtechpower.com 2015 Rongtech All rights reserved Fig.26 Continous Drain Current Derating VS Case Temperature Fig.28 Diode Junction to Case Thermal Impendence

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RSC300HF120T2NH Preliminary Data SiC MOSFET Module-9

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RSC300HF120T2NH Preliminary Data SiC MOSFET Module-10

Announcement Information in this document is believed to be accurate and reliable. However, Rongtech does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to Make Changes Rongtech reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication...

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