RSC300HF120T2NH Preliminary Data SiC MOSFET Module
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RSC300HF120T2NH Preliminary Data SiC MOSFET Module - 1

Preliminary Data RSC300HF120T2NHSiC MOSFET Module Features: • Ultra Low Loss • High-Frequency Operation • Zero Reverse Recovery Current from Diode • Zero Turn-off Tail Current from MOSFET • Normally-off, Fail-safe Device Operation • Easy of Paralleling • Copper Baseplate and Aluminum Nitride Insulator Applications: • Induction Heating • Motor Drivers • Solar and Wind Inverters www.rongtechpower.com 2015 Rongtech All rights reserved

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RSC300HF120T2NH Preliminary Data SiC MOSFET Module - 2

Electrical Characteristics of MOSFET (TC=25 unless otherwise specified) Symbol www.rongtechpower.com 2015 Rongtech All rights reserved

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RSC300HF120T2NH Preliminary Data SiC MOSFET Module - 3

Free-Wheeling SiC Schottky Diode Characteristics (TC=25 unless otherwise specified) Symbol www.rongtechpower.com 2015 Rongtech All rights reserved

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RSC300HF120T2NH Preliminary Data SiC MOSFET Module - 4

Fig.1 Typical Output Characteristic Tj=-40℃ Fig.3 Typical Output Characteristic Tj=150℃ Fig.5 Typical On-Resistant VS Temperature for Various Gate-Source voltage www.rongtechpower.com 2015 Rongtech All rights reserved Fig.2 Typical Output Characteristics Tj=25℃ Fig.4 Normalized On-Resistant VS Temperature Fig.6 Typical On-Resistant vs. Gate Voltage

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RSC300HF120T2NH Preliminary Data SiC MOSFET Module - 5

Junction Temperature Tj (°C) Fig.7 Threshold Voltage VS Temperature Drain-Source Voltage VK (VI Fig.11 Diode Characteristic at 150°C

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RSC300HF120T2NH Preliminary Data SiC MOSFET Module - 6

Drain to Source Voltage, VDS (V) Fig.18 Typical Output Capacitor Stored Energy www.rongtechpower.com 2015 Rongtech All rights reserved

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RSC300HF120T2NH Preliminary Data SiC MOSFET Module - 7

Drain to Source Current, lD5(A) Fig. 19 Inductive Switching Energy VS Drain Current For Vds=600A,Rg=2.5 Q 150 ZOO Z50 Drain to Source Current, lD5 (A) Fig.20 Inductive Switching Energy VS Drain Current For VDS=800A,RG=2.5 Q Junction Temperature, T, (°C) Fig.22 Inductive Switching Energy VS Temperature Case Temperature, Tc ("C] Fig.23 Maximum Power Dissipation (MOSFET) Derating VS Case Temperature

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RSC300HF120T2NH Preliminary Data SiC MOSFET Module - 8

Fig.27 MOSFET Junction Case Thermal Impedance www.Rongtechpower.com 2015 Rongtech All rights reserved Fig.26 Continous Drain Current Derating VS Case Temperature Fig.28 Diode Junction to Case Thermal Impendence

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RSC300HF120T2NH Preliminary Data SiC MOSFET Module - 9

Internal Circuit Package Outline (Unit: mm): www.Rongtechpower.com 2015 Rongtech All rights reserved

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RSC300HF120T2NH Preliminary Data SiC MOSFET Module - 10

Announcement Information in this document is believed to be accurate and reliable. However, Rongtech does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to Make Changes Rongtech reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the...

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