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RM75N08PA

Product catalog summary

Description: The document describes a Silicon N-Channel Power MOSFET, designed with advanced technology to achieve low static drain-to-source on-resistance (RDS(on)), enhancing energy efficiency, reliability, and durability.

General Features:

V_DS = 80V, I_D = 80A
R_DS(on) ≤ 11mΩ @ V_GS = 10V (Typ: 9.0mΩ)
Extended Safe Operating Area
Low reverse transfer capacitances
100% Single Pulse avalanche energy test

Applications:

Power switching applications
DC Motor Control
UPS

Electrical Characteristics:

Drain-to-Source Breakdown Voltage (V_DSS): 80V
Continuous Drain Current (I_D): 80A
Pulsed Drain Current (I_DM): 320A
Gate-to-Source Voltage (V_GS): ±25V
Total Dissipation (P_tot): 75W
Operating Junction Temperature Range (T_j): -55 to 175°C
Single Pulse Avalanche Energy (E_as): 850mJ

Electrical Parameters:

Drain-source Voltage: 80-88V
Static Drain-to-Source on-Resistance: 9.0-11mΩ
Gate Threshold Voltage: 2.0-4.0V
Zero Gate Voltage Drain Current: 1.0µA
Gated Body Leakage Current: ±100nA
Input Capacitance: 3700pF
Output Capacitance: 730pF
Reverse Transfer Capacitance: 240pF
Total Gate Charge: 117nC

Switching Characteristics:

Turn-on Delay Time: 18nS
Turn-on Rise Time: 80nS
Turn-off Delay Time: 55nS
Turn-off Fall Time: 40nS

Diode Characteristics:

S-D Current (Body Diode): 80A
Pulsed S-D Current (Body Diode): 320A
Diode Forward Voltage: 1.3V
Reverse Recovery Time: 75nS
Reverse Recovery Charge: 320nC

Thermal Characteristics:

Junction-to-Case Thermal Resistance (R_θJC): 0.8°C/W
Junction-to-Ambient Thermal Resistance (R_θJA): 62°C/W

Figures: The document includes figures illustrating the safe operating area, thermal impedance, output characteristics, transfer characteristics, transconductance, static drain-source on resistance, gate charge vs gate-source voltage, capacitance variations, normalized gate threshold voltage vs temperature, and normalized on resistance vs temperature.

Package Information: The MOSFET is available in a TO-220C package.

Catalog excerpts

RM75N08PA Silicon N‐Channel Power MOSFET Description This MOSFETs from Rongtech Industry(ShangHai) Inc., . Advanced 6 inch technology to achieve extremely low Static Drain‐to‐Source on‐Resistance RDS(on). For this reason, This MOSFETs has low energy consumption during application which also enhances reliability and durability. Extended Safe Operating Area Low Reverse transfer capacitances 100% Single Pulse avalanche energy Test Power switching application Electrical Characteristics @ Ta=25℃ (unless otherwise specified) a) Limited Parameters: Symbol VDSS ID IDM VGS Ptot Tj Eas Parameter Drain‐to‐Source Breakdown Voltage Drain Current (continuous) at Tc=25℃ Drain Current (pulsed) Gate to Source Voltage Total Dissipation at Tc=25℃ Operating Junction Temperature Range Single Pulse Avalanche Energy Rongtech Industry(Shan

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RM75N08PA b) Electrical Parameters: Symbol Parameter VDS Drain‐source Voltage RDS(on) Static Drain‐to‐Source on‐Resistance VGS(th) Gated Threshold Voltage IDSS IGSS(F) IGSS(R) Ciss Coss Crss Qg Qgs Qgd Zero Gate Voltage Drain Current Gated Body Leakage Current Gated Body Leakage Current Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate‐Source Charge Gate‐Drain Charge Symbol Parameter td(on) Turn‐on Delay Time tr Turn‐on Rise Time Turn‐off Delay Time Turn‐off Fall Time Symbol Parameter ISD S‐D Current(Body Diode) Test Conditions Pulsed S‐D Current(Body Diode)...

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Safe operating area Output characterisics Rongtech Industry(ShangHai)Inc., Http://www.rongtechpower.com Thermal impedance Transfer characteristics Static drain-source on resistance

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Gate charge vs gate-source voltage Figure 9. Normalized gate threshold voltage vs temperature Figure 8. Capacitance variations Figure 10. Normalized on resistance vs temperature Rongtech Industry(ShangHai)Inc., Http://www.rongtechpower.com

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