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RM70N06PA

Product catalog summary

Description: The document describes a Silicon N-Channel Power MOSFET designed with advanced technology to achieve low static drain-to-source on-resistance (RDS(on)), resulting in low energy consumption, enhanced reliability, and durability.

General Features:

Drain-to-Source Voltage (VDS) of 60V and Drain Current (ID) of 70A.
RDS(on) ≤ 15mΩ at VGS = 10V (Typical: 12.0mΩ).
Extended Safe Operating Area and low reverse transfer capacitances.
100% Single Pulse Avalanche Energy Test.

Applications:

Power switching applications.
DC Motor Control.
Uninterruptible Power Supplies (UPS).

Electrical Characteristics:

Drain-to-Source Breakdown Voltage (VDSS): 60V.
Continuous Drain Current (ID) at Tc=25℃: 70A.
Pulsed Drain Current (IDM): 280A.
Gate-to-Source Voltage (VGS): ±25V.
Total Dissipation (Ptot) at Tc=25℃: 75W.
Operating Junction Temperature Range (Tj): -55 to 175℃.
Single Pulse Avalanche Energy (Eas): 650mJ.

Electrical Parameters:

Static Drain-to-Source On-Resistance (RDS(on)): 12.0 to 15mΩ.
Gate Threshold Voltage (VGS(th)): 2.0 to 4.0V.
Zero Gate Voltage Drain Current (IDSS): 1.0µA.
Input Capacitance (Ciss): 2400pF.
Output Capacitance (Coss): 1300pF.
Reverse Transfer Capacitance (Crss): 190pF.
Total Gate Charge (Qg): 110nC.

Switching Characteristics:

Turn-on Delay Time (td(on)): 12nS.
Turn-on Rise Time (tr): 55nS.
Turn-off Delay Time (td(off)): 50nS.
Turn-off Fall Time (tf): 50nS.

Diode Characteristics:

S-D Current (Body Diode) (ISD): 70A.
Pulsed S-D Current (Body Diode) (ISDM): 280A.
Diode Forward Voltage (VSD): 1.3V.
Reverse Recovery Time (trr): 81nS.
Reverse Recovery Charge (Qrr): 172nC.

Thermal Resistance:

Junction-to-Case (RθJC): 0.8℃/W.
Junction-to-Ambient (RθJA): 62℃/W.

Package Information: TO-220C Package.

Catalog excerpts

RM70N06PA Silicon N‐Channel Power MOSFET Description This MOSFETs from Rongtech Industry(ShangHai) Inc., . Advanced 6 inch technology to achieve extremely low Static Drain‐to‐Source on‐Resistance RDS(on). For this reason, This MOSFETs has low energy consumption during application which also enhances reliability and durability. Extended Safe Operating Area Low Reverse transfer capacitances 100% Single Pulse avalanche energy Test Power switching application Electrical Characteristics @ Ta=25℃ (unless otherwise specified) a) Limited Parameters: Symbol VDSS ID IDM VGS Ptot Tj Eas Parameter Drain‐to‐Source Breakdown Voltage Drain Current (continuous) at Tc=25℃ Drain Current (pulsed) Gate to Source Voltage Total Dissipation at Tc=25℃ Operating Junction Temperature Range Single Pulse Avalanche Energy Rongtech Industry(Shan

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RM70N06PA b) Electrical Parameters: Symbol Parameter VDS Drain‐source Voltage RDS(on) Static Drain‐to‐Source on‐Resistance VGS(th) Gated Threshold Voltage IDSS IGSS(F) IGSS(R) Ciss Coss Crss Qg Qgs Qgd Zero Gate Voltage Drain Current Gated Body Leakage Current Gated Body Leakage Current Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate‐Source Charge Gate‐Drain Charge Symbol Parameter td(on) Turn‐on Delay Time tr Turn‐on Rise Time Turn‐off Delay Time Turn‐off Fall Time Symbol Parameter ISD S‐D Current(Body Diode) Test Conditions Pulsed S‐D Current(Body Diode)...

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