RM50N06PA
5Pages

Catalog excerpts

RM50N06PA Silicon N‐Channel Power MOSFET Description This MOSFETs from Rongtech Industry(ShangHai) Inc., . Advanced 6 inch technology to achieve extremely low Static Drain‐to‐Source on‐Resistance RDS(on). For this reason, This MOSFETs has low energy consumption during application which also enhances reliability and durability. Extended Safe Operating Area Low Reverse transfer capacitances 100% Single Pulse avalanche energy Test Power switching application Electrical Characteristics @ Ta=25℃ (unless otherwise specified) a) Limited Parameters: Symbol VDSS ID IDM VGS Ptot Tj Eas Parameter Drain‐to‐Source Breakdown Voltage Drain Current (continuous) at Tc=25℃ Drain Current (pulsed) Gate to Source Voltage Total Dissipation at Tc=25℃ Operating Junction Temperature Range Single Pulse Avalanche Energy Rongtech Industry(Shan

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RM50N06PA b) Electrical Parameters: Symbol Parameter VDS Drain‐source Voltage RDS(on) Static Drain‐to‐Source on‐Resistance VGS(th) Gated Threshold Voltage IDSS IGSS(F) IGSS(R) Ciss Coss Crss Qg Qgs Qgd Zero Gate Voltage Drain Current Gated Body Leakage Current Gated Body Leakage Current Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate‐Source Charge Gate‐Drain Charge Symbol Parameter td(on) Turn‐on Delay Time tr Turn‐on Rise Time Turn‐off Delay Time Turn‐off Fall Time Symbol Parameter ISD S‐D Current(Body Diode) Test Conditions Pulsed S‐D Current(Body...

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RM50N06PA Electrical performance (typic) 2.5 R DS(on) , Drain-to-Source On Resistance (Normalized) Fig 2. Normalized On-Resistance Vs. Temperature VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + C gd Fig 1. Typical Transfer Characteristics 2500 Fig 3. Typical Capacitance Vs. Drain-to-Source Voltage Q G , Total Gate Charge (nC) Fig 4. Typical Gate Charge Vs. Gate-to-Source Voltage Rongtech Industry(ShangHai)Inc., Http://www.rongtechpower.com

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ISD , Reverse Drain Current (A) Fig 6. Maximum Safe Operating Area 300 EAS , Single Pulse Avalanche Energy (mJ) Fig 5. Typical Source-Drain Diode Forward Voltage OPERATION IN THIS AREA L LIMITED BY RDS(on) Starting TJ , Junction Temperature ( °C) Fig 7. Maximum Drain Current Vs. Case Temperature Fig 8a. Maximum Avalanche Energy Vs. Drain Current V (B R )D SS Fig 8b. Unclamped Inductive Test Circuit Fig 8c. Unclamped Inductive Waveforms Rongtech Industry(ShangHai)Inc., Http://www.rongtechpower.com

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