RM40N10PA
5Pages

Catalog excerpts

RM40N10PA Silicon N‐Channel Power MOSFET Description This MOSFETs from Rongtech Industry(ShangHai) Inc.,. Advanced 6 inch technology to achieve extremely low Static Drain‐to‐Source on‐Resistance RDS(on). For this reason, This MOSFETs has low energy consumption during application which also enhances reliability and durability. Extended Safe Operating Area Low Reverse transfer capacitances 100% Single Pulse avalanche energy Test Power switching application Electrical Characteristics @ Ta=25℃ (unless otherwise specified) a) Limited Parameters: Symbol VDSS ID IDM VGS Ptot Tj Eas Parameter Drain‐to‐Source Breakdown Voltage Drain Current (continuous) at Tc=25℃ Drain Current (pulsed) Gate to Source Voltage Total Dissipation at Tc=25℃ Operating Junction Temperature Range Single Pulse Avalanche Energy Rongtech Industry(Shang

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RM40N10PA b) Electrical Parameters: Symbol Parameter VDS Drain‐source Voltage RDS(on) Static Drain‐to‐Source on‐Resistance VGS(th) Gated Threshold Voltage IDSS IGSS(F) IGSS(R) Ciss Coss Crss Qg Qgs Qgd Zero Gate Voltage Drain Current Gated Body Leakage Current Gated Body Leakage Current Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate‐Source Charge Gate‐Drain Charge Symbol Parameter td(on) Turn‐on Delay Time Turn‐off Delay Time Turn‐off Fall Time Turn‐on Rise Time Symbol Parameter ISD S‐D Current(Body Diode) Test Conditions Pulsed S‐D Current(Body...

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R DS(on) , Drain-to-Source O (Normalized) VGS = 0V, f = 1MHz GS Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd Fig 3. Typical Capacitance Vs. Drain-to-Source Voltage Rongtech Industry(ShangHai)Inc., Http://www.rongtechpower.com Fig 2. Normalized On-Resistance Vs. Temperature Fig 1. Typical Transfer Characteristics QG , Total Gate Charge (nC) Fig 4. Typical Gate Charge Vs. Gate-to-Source Voltage

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ISD , Reverse Drain Current (A) OPERATION IN THIS AREA L LIMITED BY RDS(on) Fig 6. Maximum Safe Operating Area Fig 5. Typical Source-Drain Diode Forward Voltage Thermal Response (Z thJC) SINGLE PULSE (THERMAL RESPONSE) Notes: 1. Duty factor D = t 1 / 2 2. Peak TJ = P DM x thJC + TC t1 , Rectangular Pulse Duration (sec) Fig 7. Maximum Effective Transient Thermal Impedance, Junction-to-Case Rongtech Industry(ShangHai)Inc., Http://www.rongtechpower.com

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