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RM30N20PK

Product catalog summary

Silicon N-Channel Power MOSFET Overview
This document provides technical specifications for the RM30N20PK, a Silicon N-Channel Power MOSFET developed by Rongtech Industry (Shanghai) Inc. The MOSFET is designed using advanced technology to achieve low static drain-to-source on-resistance, enhancing energy efficiency, reliability, and durability.

General Features

Drain-to-Source Voltage (V_DS): 200V
Continuous Drain Current (I_D): 30A
Static Drain-to-Source On-Resistance (R_DS(on)): ≤75mΩ at V_GS=10V (Typical: 55mΩ)
Extended Safe Operating Area
Low Reverse Transfer Capacitances
100% Single Pulse Avalanche Energy Test

Applications

Power Switching Applications
DC Motor Control
Uninterruptible Power Supplies (UPS)

Electrical Characteristics

Drain-to-Source Breakdown Voltage (V_DSS): 200V
Continuous Drain Current (I_D) at T_c=25℃: 30A
Pulsed Drain Current (I_DM): 120A
Gate-to-Source Voltage (V_GS): ±25V
Total Dissipation (P_tot) at T_c=25℃: 280W
Operating Junction Temperature Range (T_j): -55 to 175℃
Single Pulse Avalanche Energy (E_as): 700mJ

Electrical Parameters

Gate Threshold Voltage (V_GS(th)): 2.0V to 4.0V
Zero Gate Voltage Drain Current (I_DSS): 1.0µA
Gate Body Leakage Current (I_GSS): ±100nA
Input Capacitance (C_iss): 2200pF
Output Capacitance (C_oss): 315pF
Reverse Transfer Capacitance (C_rss): 83pF
Total Gate Charge (Q_g): 123nC

Switching Characteristics

Turn-on Delay Time (t_d(on)): 10ns
Turn-on Rise Time (t_r): 40ns
Turn-off Delay Time (t_d(off)): 41ns
Turn-off Fall Time (t_f): 30ns

Thermal Characteristics

Junction-to-Case Thermal Resistance (R_θJC): 0.7℃/W
Junction-to-Ambient Thermal Resistance (R_θJA): 42℃/W

Package Information
The MOSFET is available in a TO-247 package with specified dimensions for various components, ensuring compatibility with standard mounting and integration processes.

Catalog excerpts

RM30N20PK Silicon N‐Channel Power MOSFET Description This MOSFETs from Rongtech Industry(ShangHai) Inc., . Advanced 6 in ch technology to achieve extremely low Static Drain‐to‐Source on‐Resistance RDS(on). For this reason, This MOSFETs has low energy consumption during application which also enhances reliability and durability. Extended Safe Operating Area Low Reverse transfer capacitances 100% Single Pulse avalanche energy Test Power switching application Electrical Characteristics @ Ta=25℃ (unless otherwise specified) a) Limited Parameters: Symbol VDSS ID IDM VGS Ptot Tj Eas Parameter Drain‐to‐Source Breakdown Voltage Drain Current (continuous) at Tc=25℃ Drain Current (pulsed) Gate to Source Voltage Total Dissipation at Tc=25℃ Operating Junction Temperature Range Single Pulse Avalanche Energy Rongtech Industry(ShangH

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RM30N20PK b) Electrical Parameters: Symbol Parameter VDS Drain‐source Voltage RDS(on) Static Drain‐to‐Source on‐Resistance VGS(th) Gated Threshold Voltage IDSS IGSS(F) IGSS(R) Ciss Coss Crss Qg Qgs Qgd Zero Gate Voltage Drain Current Gated Body Leakage Current Gated Body Leakage Current Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate‐Source Charge Gate‐Drain Charge Symbol Parameter td(on) Turn‐on Delay Time tr Turn‐on Rise Time Turn‐off Delay Time Turn‐off Fall Time Symbol Parameter ISD S‐D Current(Body Diode) Test Conditions Pulsed S‐D Current(Body Diode)...

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Fig 2. Normalized On-Resistance Vs. Temperature VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = C gd Fig 3. Typical Capacitance Vs. Drain-to-Source Voltage Rongtech Industry(ShangHai)Inc., Http://www.rongtechpower.com Fig 1. Typical Transfer Characteristics RDS(on) , Drain-to-Source On (Normalized) QG , Total Gate Charge (nC) Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage

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ISD , Reverse Drain Current (A) OPERATION IN THIS AREA LIMITED BY R DS(on) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area ID , Drain Current (A) ID , Drain Current (A) Fig 9. Maximum Drain Current Vs. Case Temperature Rongtech Industry(ShangHai)Inc., Http://www.rongtechpower.com

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