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RM110N06PK

Product catalog summary

Overview: The document provides technical specifications and characteristics of the RM110N06PK, a Silicon N-Channel Power MOSFET developed by Rongtech Industry (Shanghai) Inc. It highlights the MOSFET's low static drain-to-source on-resistance, which contributes to reduced energy consumption and enhanced reliability.

General Features:

Drain-to-Source Voltage (V_DS): 60V
Continuous Drain Current (I_D): 110A
Static Drain-to-Source On-Resistance (R_DS(on)): ≤10mΩ at V_GS=10V
Extended Safe Operating Area
Low reverse transfer capacitances
100% Single Pulse Avalanche Energy Test

Applications:

Power switching applications
DC Motor Control
Uninterruptible Power Supplies (UPS)

Electrical Characteristics:

Drain-to-Source Breakdown Voltage (V_DSS): 60V
Gate-to-Source Voltage (V_GS): ±25V
Total Dissipation (P_tot): 280W
Operating Junction Temperature Range (T_j): -55 to 175°C
Single Pulse Avalanche Energy (E_as): 1100mJ

Electrical Parameters:

Gate Threshold Voltage (V_GS(th)): 2.0 to 4.0V
Zero Gate Voltage Drain Current (I_DSS): 1.0µA
Input Capacitance (C_iss): 3200pF
Output Capacitance (C_oss): 760pF
Reverse Transfer Capacitance (C_rss): 220pF

Switching Characteristics:

Turn-on Delay Time (t_d(on)): 14ns
Turn-on Rise Time (t_r): 101ns
Turn-off Delay Time (t_d(off)): 50ns
Turn-off Fall Time (t_f): 65ns

Thermal Resistance:

Junction-to-Case (R_θJC): 0.8°C/W
Junction-to-Ambient (R_θJA): 42°C/W

Package Information: The MOSFET is available in a TO-247 package with specified dimensions for various components, ensuring compatibility with standard mounting and integration processes.

Graphical Data: The document includes graphs illustrating typical transfer characteristics, normalized on-resistance vs. temperature, capacitance vs. drain-to-source voltage, and gate charge vs. gate-to-source voltage, providing insights into the MOSFET's performance under different conditions.

Catalog excerpts

RM110N06PK Silicon N‐Channel Power MOSFET Description This MOSFETs from Rongtech Industry(ShangHai) Inc., . Advanced 6 inch technology to achieve extremely low Static Drain‐to‐Source on‐Resistance RDS(on). For this reason, This MOSFETs has low energy consumption during application which also enhances reliability and durability. Extended Safe Operating Area Low Reverse transfer capacitances 100% Single Pulse avalanche energy Test Power switching application Electrical Characteristics @ Ta=25℃ (unless otherwise specified) a) Limited Parameters: Symbol VDSS ID IDM VGS Ptot Tj Eas Parameter Drain‐to‐Source Breakdown Voltage Drain Current (continuous) at Tc=25℃ Drain Current (pulsed) Gate to Source Voltage Total Dissipation at Tc=25℃ Operating Junction Temperature Range Single Pulse Avalanche Energy Rongtech Industry(ShangHai

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RM110N06PK b) Electrical Parameters: Symbol Parameter VDS Drain‐source Voltage RDS(on) Static Drain‐to‐Source on‐Resistance VGS(th) Gated Threshold Voltage IDSS IGSS(F) IGSS(R) Ciss Coss Crss Qg Qgs Qgd Zero Gate Voltage Drain Current Gated Body Leakage Current Gated Body Leakage Current Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate‐Source Charge Gate‐Drain Charge Symbol Parameter td(on) Turn‐on Delay Time tr Turn‐on Rise Time Turn‐off Delay Time Turn‐off Fall Time Symbol Parameter ISD S‐D Current(Body Diode) Test Conditions Diode Forward Voltage Reverse...

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VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd QG , Total Gate Charge (nC) Fig 3. Typical Capacitance Vs. Drain-to-Source Voltage Fig 2. Normalized On-Resistance Vs. Temperature Fig 1. Typical Transfer Characteristics RDS(on) , Drain-to-Source On (Normalized) Fig 4. Typical Gate Charge Vs. Gate-to-Source Voltage Rongtech Industry(ShangHai)Inc., Http://www.rongtechpower.com

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Fig 9. Maximum Drain Current Vs. Case Temperature Fig 6. Maximum Safe Operating Area Fig 5. Typical Source-Drain Diode Forward Voltage EAS , Single Pulse Avalanche Energy (mJ) ISD , Reverse Drain Current (A) Starting TJ , Junction Temperature ( ° C) Fig 10. Maximum Avalanche Energy Vs. Drain Current Rongtech Industry(ShangHai)Inc., Http://www.rongtechpower.com

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