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RM110N06PA

Product catalog summary

Description: The document describes a Silicon N-Channel Power MOSFET, designed with advanced technology to achieve low static drain-to-source on-resistance (RDS(on)), enhancing energy efficiency, reliability, and durability.

General Features:

Drain-to-Source Voltage (VDS) of 60V and Drain Current (ID) of 110A.
RDS(on) is less than or equal to 10mΩ at VGS=10V, typically 7.0mΩ.
Extended Safe Operating Area and low reverse transfer capacitances.
100% Single Pulse avalanche energy tested.

Applications: Suitable for power switching applications, DC motor control, and UPS systems.

Electrical Characteristics:

Drain-to-Source Breakdown Voltage (VDSS): 60V.
Continuous Drain Current (ID) at Tc=25℃: 110A.
Pulsed Drain Current (IDM): 360A.
Gate-to-Source Voltage (VGS): +/-25V.
Total Dissipation (Ptot) at Tc=25℃: 80W.
Operating Junction Temperature Range (Tj): -55 to 175℃.
Single Pulse Avalanche Energy (Eas): 1100mJ.

Electrical Parameters:

Static Drain-to-Source On-Resistance (RDS(on)): 7.0 to 10 mΩ.
Gate Threshold Voltage (VGS(th)): 2.0 to 4.0V.
Zero Gate Voltage Drain Current (IDSS): 1.0 µA.
Input Capacitance (Ciss): 3200 pF.
Output Capacitance (Coss): 760 pF.
Reverse Transfer Capacitance (Crss): 220 pF.
Total Gate Charge (Qg): 152 nC.

Switching Characteristics:

Turn-on Delay Time (td(on)): 14 nS.
Turn-on Rise Time (tr): 101 nS.
Turn-off Delay Time (td(off)): 50 nS.
Turn-off Fall Time (tf): 65 nS.

Diode Characteristics:

Source-Drain Current (ISD): 110A.
Pulsed Source-Drain Current (ISDM): 360A.
Diode Forward Voltage (VSD): 1.3V.
Reverse Recovery Time (trr): 63 nS.
Reverse Recovery Charge (Qrr): 130 nC.

Thermal Resistance:

Junction-to-Case (RθJC): 0.8 ℃/W.
Junction-to-Ambient (RθJA): 62 ℃/W.

Graphs and Figures: The document includes graphs illustrating typical transfer characteristics, normalized on-resistance vs. temperature, capacitance vs. drain-to-source voltage, gate charge vs. gate-to-source voltage, source-drain diode forward voltage, maximum safe operating area, maximum drain current vs. case temperature, and maximum avalanche energy vs. drain current.

Package Information: The MOSFET is available in a TO-220C package.

Catalog excerpts

RM110N06PA Silicon N‐Channel Power MOSFET Description This MOSFETs from Rongtech Industry(ShangHai) Inc.,. Advanced 6 inch technology to achieve extremely low Static Drain‐to‐Source on‐Resistance RDS(on). For this reason, This MOSFETs has low energy consumption during application which also enhances reliability and durability. Extended Safe Operating Area Low Reverse transfer capacitances 100% Single Pulse avalanche energy Test Power switching application Electrical Characteristics @ Ta=25℃ (unless otherwise specified) a) Limited Parameters: Symbol VDSS ID IDM VGS Ptot Tj Eas Parameter Drain‐to‐Source Breakdown Voltage Drain Current (continuous) at Tc=25℃ Drain Current (pulsed) Gate to Source Voltage Total Dissipation at Tc=25℃ Operating Junction Temperature Range Single Pulse Avalanche Energy Rongtech Industry(ShangHa

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RM110N06PA b) Electrical Parameters: Symbol Parameter VDS Drain‐source Voltage RDS(on) Static Drain‐to‐Source on‐Resistance VGS(th) Gated Threshold Voltage IDSS IGSS(F) IGSS(R) Ciss Coss Crss Qg Qgs Qgd Zero Gate Voltage Drain Current Gated Body Leakage Current Gated Body Leakage Current Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate‐Source Charge Gate‐Drain Charge Symbol Parameter td(on) Turn‐on Delay Time Turn‐off Delay Time Turn‐off Fall Time Turn‐on Rise Time Symbol Parameter ISD S‐D Current(Body Diode) Test Conditions Pulsed S‐D Current(Body Diode)...

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RDS(on) , Drain-to-Source On (Normalized) Fig 1. Typical Transfer Characteristics Fig 2. Normalized On-Resistance Vs. Temperature VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd Fig 3. Typical Capacitance Vs. Drain-to-Source Voltage QG , Total Gate Charge (nC) Fig 4. Typical Gate Charge Vs. Gate-to-Source Voltage Rongtech Industry(ShangHai)Inc., Http://www.rongtechpower.com

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ISD , Reverse Drain Current (A) OPERATION IN THIS AREA LIMITED O BY RDS(on) EAS , Single Pulse Avalanche Energy (mJ) Fig 9. Maximum Drain Current Vs. Case Temperature Fig 6. Maximum Safe Operating Area Fig 5. Typical Source-Drain Diode Forward Voltage Starting TJ , Junction Temperature ( ° C) Fig 10. Maximum Avalanche Energy Vs. Drain Current Rongtech Industry(ShangHai)Inc., Http://www.rongtechpower.com

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