RGW60N65F1A 650V /60A Trench Field Stop IGBT

Product catalog summary

Overview: The RGW60N65F1A is a 650V/60A Trench Field Stop IGBT designed by Rongtech Industry for applications requiring low switching losses and high energy efficiency. It is suitable for motion control, solar applications, and welding machines.

Features:

High breakdown voltage of up to 650V for enhanced reliability.
Trench-Stop Technology providing high-speed switching, high ruggedness, temperature stability, and low VCEsat.
Easy parallel switching capability due to a positive temperature coefficient in VCEsat.
Enhanced avalanche capability.

Applications:

Uninterruptible Power Supplies (UPS)
Inverters
Welding Converters
Power Factor Correction (PFC) applications
Converters with high switching frequency

Specifications:

Collector-Emitter Breakdown Voltage (VCE): 650V
DC Collector Current (IC): 60A at 100°C
Collector-Emitter Saturation Voltage (VCE(sat)): 1.85V at 25°C
Operating Junction Temperature (Tj): -40 to +150°C
Thermal Resistance (junction-case): 0.48 K/W for IGBT, 1.1 K/W for Diode

Electrical Characteristics:

Gate Threshold Voltage (VGE(th)): 4.0 to 6.0V
Zero Gate Voltage Collector Current (ICES): 0.1 to 1000 μA
Gate Charge (QG): 158 nC

Switching Characteristics:

Turn-on Delay Time (td(on)): 56 ns
Rise Time (tr): 79 ns
Turn-off Delay Time (td(off)): 165 ns
Fall Time (tf): 81 ns
Turn-on Energy (Eon): 2.2 mJ
Turn-off Energy (Eoff): 0.89 mJ

Diode Characteristics:

Diode Forward Voltage (VFM): 2.9V
Reverse Recovery Time (Trr): 90 ns
Reverse Recovery Charge (Qrr): 900 nC

Graphs and Figures:

Figures illustrate characteristics such as FBSOA, power dissipation, output characteristics, saturation voltage, switching times, and losses.
Gate charge and capacitance characteristics are also depicted.

Catalog excerpts

RGW60N65F1A 650V /60A Trench Field Stop IGBT-1

Rongtech 650V Trench Field Stop IGBTs offer low switching losses, high energy efficiency and high avalanche ruggedness for motion control, solar application and welding machine. FEATURES • High breakdown voltage up to 650V for improved reliability • Trench-Stop Technology offering : > High speed switching > High ruggedness, temperature stable > Low V CEsat > Easy parallel switching capability due to positive temperature coefficient in VCEsat • Enhanced avalanche capability APPLICATION • Uninterruptible Power Supplies • Inverter • Welding Converters • PFC applications • Converter with high switching frequency

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RGW60N65F1A 650V /60A Trench Field Stop IGBT-2

Maximum Ratings (Tj= 25 °C unless otherwise specified) Thermal Resistance Parameter

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RGW60N65F1A 650V /60A Trench Field Stop IGBT-3

Electrical Characteristics (Tj= 25 °C unless otherwise specified)

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RGW60N65F1A 650V /60A Trench Field Stop IGBT-4

Switching Characteristic, Inductive . Load

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RGW60N65F1A 650V /60A Trench Field Stop IGBT-5

Rongtech Industry(ShangHai) Inc., Fig. 1 FBSOA characteristics Fig. 2 Power dissipation as a function of TC 300 Fig. 4 Saturation voltage characteristics 200

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RGW60N65F1A 650V /60A Trench Field Stop IGBT-6

Rongtech Industry(ShangHai) Inc., Fig. 5 Switching times vs. gate resistor 1000 Fig. 6 Switching times vs. collector current 1000 td(on) tr t, SWITCHING TIMES [ns] Fig. 7 Switching loss vs. gate resistor Fig. 8 Switching loss vs. collector current 4.5

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