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  3. RGW60N65F1A 650V /60A Trench Field Stop IGBT

RGW60N65F1A 650V /60A Trench Field Stop IGBT
1 /8Pages

RGW60N65F1A 650V /60A Trench Field Stop IGBT

RGW60N65F1A 650V /60A Trench Field Stop IGBT
1 /8Pages

Catalog excerpts

RGW60N65F1A 650V /60A Trench Field Stop IGBT-1

Rongtech 650V Trench Field Stop IGBTs offer low switching losses, high energy efficiency and high avalanche ruggedness for motion control, solar application and welding machine. FEATURES • High breakdown voltage up to 650V for improved reliability • Trench-Stop Technology offering : > High speed switching > High ruggedness, temperature stable > Low V CEsat > Easy parallel switching capability due to positive temperature coefficient in VCEsat • Enhanced avalanche capability APPLICATION • Uninterruptible Power Supplies • Inverter • Welding Converters • PFC applications • Converter with high switching frequency

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RGW60N65F1A 650V /60A Trench Field Stop IGBT-2

Maximum Ratings (Tj= 25 °C unless otherwise specified) Thermal Resistance Parameter

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RGW60N65F1A 650V /60A Trench Field Stop IGBT-3

Electrical Characteristics (Tj= 25 °C unless otherwise specified)

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RGW60N65F1A 650V /60A Trench Field Stop IGBT-4

Switching Characteristic, Inductive . Load

 Open the catalog to page 4
RGW60N65F1A 650V /60A Trench Field Stop IGBT-5

Rongtech Industry(ShangHai) Inc., Fig. 1 FBSOA characteristics Fig. 2 Power dissipation as a function of TC 300 Fig. 4 Saturation voltage characteristics 200

 Open the catalog to page 5
RGW60N65F1A 650V /60A Trench Field Stop IGBT-6

Rongtech Industry(ShangHai) Inc., Fig. 5 Switching times vs. gate resistor 1000 Fig. 6 Switching times vs. collector current 1000 td(on) tr t, SWITCHING TIMES [ns] Fig. 7 Switching loss vs. gate resistor Fig. 8 Switching loss vs. collector current 4.5

 Open the catalog to page 6
RGW60N65F1A 650V /60A Trench Field Stop IGBT-7

Fig. 9 Gate charge characteristics -Ciss(pF) ----Coss(pF) -----Crss(pF)

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