RGW40N120T1B 1200V /40A Trench Field Stop IGBT

Product catalog summary

Product Overview: The RGW40N120T1B is a 1200V, 40A Trench Field Stop IGBT developed by Rongtech Industry (Shanghai) Inc. It features high breakdown voltage for improved reliability and utilizes Trench-Stop Technology for tight parameter distribution, high ruggedness, and temperature stability. It offers a short circuit withstand time of 10μs and easy parallel switching capability due to a positive temperature coefficient in VCE(SAT).

Applications: This IGBT is suitable for use in frequency converters and motor drives.

Specifications:

Collector-Emitter Breakdown Voltage (VCE): 1200V
DC Collector Current (IC): 40A at 100°C
Collector-Emitter Saturation Voltage (VCE(SAT)): 1.7V at IC=40A
Continuous Gate-Emitter Voltage (VGE): ±20V
Power Dissipation (Ptot): 416W at Tj=25°C
Operating Junction Temperature (Tj): -40 to +150°C

Thermal Resistance:

IGBT Junction-Case: 0.3 K/W
Diode Junction-Case: 0.6 K/W
Junction-Ambient: 40 K/W

Electrical Characteristics:

Collector-Emitter Breakdown Voltage (BVCES): 1200V minimum
Gate Threshold Voltage (VGE(th)): 5.1V minimum
Zero Gate Voltage Collector Current (ICES): 10μA maximum at 25°C
Gate-Emitter Leakage Current (IGES): 100nA maximum

Dynamic Characteristics:

Input Capacitance (Cies): 4400pF
Gate Charge (QG): 270nC
Turn-on Delay Time (td(on)): 55ns
Turn-off Delay Time (td(off)): 230ns

Diode Characteristics:

Diode Forward Voltage (VFM): 3.5V
Reverse Recovery Time (Trr): 190ns

Figures and Graphs: The document includes various figures illustrating characteristics such as FBSOA, load current vs. frequency, power dissipation vs. temperature, short circuit time vs. VGE, output characteristics, saturation voltage characteristics, switching times vs. gate resistor and collector current, switching loss vs. gate resistor and collector current, gate charge characteristics, and capacitance characteristics.

Catalog excerpts

RGW40N120T1B 1200V /40A Trench Field Stop IGBT-1

FEATURES • High breakdown voltage to 1200V for improved reliability • Trench-Stop Technology offering : > very tight parameter distribution > high ruggedness, temperature stable behavior > Short circuit withstand time - 10ps > High ruggedness, temperature stable > Low Vce(sat) > Easy parallel switching capability due to positive temperature coefficient in VCE(SAT) • Enhanced avalanche capability APPLICATION • Frequency Converters • Motor Drive

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RGW40N120T1B 1200V /40A Trench Field Stop IGBT-2

Rongtech Industry(ShangHai) Inc.,Maximum Ratings Parameter

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RGW40N120T1B Electrical Characteristics of the IGBT ( Tj= 25 °C unless otherwise specified) : Parameter Switching Characteristic, Inductive Load Parameter

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RGW40N120T1B Turn-off delay time Electrical Characteristics of the DIODE ( Tj= 25 °C unless otherwise specified) Fig. 2 Load Current vs. Frequency

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RGW40N120T1B 1200V /40A Trench Field Stop IGBT-5

Fig. 3 Power dissipation as a function of TC Fig. 4 Short circuit time and current vs.VGE TSC(us) Fig. 5 Output characteristics http://www.rongtechpower.com/ Fig. 6 Saturation voltage characterist

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Fig. 7 Switching times vs. gate resistor 1000

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Rongtech Industry(ShangHai) Inc., Fig. 9 Switching loss vs. gate resistor Fig. 10 Switching loss vs. collector current Common Emitter Fig. 11 Gate charge characteristics Ciss(pF) Coss(pF)

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