RGW40N120T1B 1200V /40A Trench Field Stop IGBT
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Catalog excerpts

FEATURES • High breakdown voltage to 1200V for improved reliability • Trench-Stop Technology offering : > very tight parameter distribution > high ruggedness, temperature stable behavior > Short circuit withstand time - 10ps > High ruggedness, temperature stable > Low Vce(sat) > Easy parallel switching capability due to positive temperature coefficient in VCE(SAT) • Enhanced avalanche capability APPLICATION • Frequency Converters • Motor Drive

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RGW40N120T1B 1200V /40A Trench Field Stop IGBT-2

Rongtech Industry(ShangHai) Inc.,Maximum Ratings Parameter

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RGW40N120T1B 1200V /40A Trench Field Stop IGBT-3

RGW40N120T1B Electrical Characteristics of the IGBT ( Tj= 25 °C unless otherwise specified) : Parameter Switching Characteristic, Inductive Load Parameter

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RGW40N120T1B 1200V /40A Trench Field Stop IGBT-4

RGW40N120T1B Turn-off delay time Electrical Characteristics of the DIODE ( Tj= 25 °C unless otherwise specified) Fig. 2 Load Current vs. Frequency

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RGW40N120T1B 1200V /40A Trench Field Stop IGBT-5

Fig. 3 Power dissipation as a function of TC Fig. 4 Short circuit time and current vs.VGE TSC(us) Fig. 5 Output characteristics http://www.rongtechpower.com/ Fig. 6 Saturation voltage characterist

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RGW40N120T1B 1200V /40A Trench Field Stop IGBT-6

Fig. 7 Switching times vs. gate resistor 1000

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RGW40N120T1B 1200V /40A Trench Field Stop IGBT-7

Rongtech Industry(ShangHai) Inc., Fig. 9 Switching loss vs. gate resistor Fig. 10 Switching loss vs. collector current Common Emitter Fig. 11 Gate charge characteristics Ciss(pF) Coss(pF)

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