RGW40N120F1A 1200V /40A Trench Field Stop IGBT

Product catalog summary

Product Overview:
The RGW40N120F1A is a 1200V, 40A Trench Field Stop IGBT developed by Rongtech Industry (Shanghai) Inc. It features high breakdown voltage for improved reliability, trench-stop technology for high-speed switching, and enhanced avalanche capability. It is suitable for applications such as uninterruptible power supplies, solar inverters, welding, and power factor correction (PFC) applications.

Key Features:

High breakdown voltage of 1200V.
Trench-Stop Technology for high-speed switching and temperature stability.
Short circuit withstand time of 10μs.
Low VCEsat and easy parallel switching capability.

Maximum Ratings:

Collector-Emitter Breakdown Voltage (VCE): 1200V.
DC Collector Current (IC): 80A at 25°C, 40A at 100°C.
Continuous Gate-Emitter Voltage (VGE): ±20V, Transient: ±30V.
Power Dissipation (Ptot): 417W at 25°C.
Operating Junction Temperature (Tj): -40 to +150°C.

Thermal Resistance:

IGBT junction-case: 0.3 K/W.
Diode junction-case: 0.6 K/W.
Junction-ambient: 40 K/W.

Electrical Characteristics:

Collector-Emitter Breakdown Voltage (BVCES): 1200V minimum.
Gate Threshold Voltage (VGE(th)): 5.1V to 6.4V.
Collector-Emitter Saturation Voltage (VCE(sat)): 2.0V at 25°C, 2.5V at 150°C.
Zero Gate Voltage Collector Current (ICES): 10μA at 25°C, 2500μA at 150°C.

Switching Characteristics:

Turn-on delay time (td(on)): 60ns.
Rise time (tr): 27ns.
Turn-off delay time (td(off)): 230ns.
Fall time (tf): 70ns.

Diode Characteristics:

Diode Forward Voltage (VFM): 3.5V.
Reverse Recovery Time (Trr): 190ns.
Reverse Recovery Current (Irr): 6A.

Graphical Data:

Figures illustrate characteristics such as FBSOA, load current vs. frequency, power dissipation, short circuit time vs. VGE, output characteristics, and switching times vs. gate resistor and collector current.

Catalog excerpts

RGW40N120F1A 1200V /40A Trench Field Stop IGBT-1

Rongtech Industry(ShangHai) Inc.,1200V/40A Trench Field Stop IGBT FEATURES • High breakdown voltage to 1200V for improved reliability • Trench-Stop Technology offering : > High speed switching > High ruggedness, temperature stable > Short circuit withstand time - 10ps > Low V CEsat > Easy parallel switching capability due to positive temperature coefficient in VCEsat • Enhanced avalanche capability APPLICATION • Uninterruptible Power Supplies • Solar inverter • Welding • PFC applications

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Switching Characteristic, Inductive Load Parameter

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Fall time Turn-off energy Electrical Characteristics of the DIODE（Tj= 25℃ unless otherwise specified） Parameter Dynamic Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current Fig. 2 Load Current vs. Frequency 160 140 Fig. 3 Power dissipation as a function of TC Fig. 4 Short circuit time and current vs

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Fig. 6 Saturation voltage characteristics Fig. 7 Switching times vs. gate resistor Fig. 8 Switching times vs. collector current

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Common Emitter Common Emitter Fig. 9 Switching loss vs. gate resistor Fig. 10 Switching loss vs. collector current 14 Common Emitter Fig. 11 Gate charge characteristics http://www.rongtechpower.com/

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