RGW40N120F1A 1200V /40A Trench Field Stop IGBT
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Catalog excerpts

Rongtech Industry(ShangHai) Inc.,1200V/40A Trench Field Stop IGBT FEATURES • High breakdown voltage to 1200V for improved reliability • Trench-Stop Technology offering : > High speed switching > High ruggedness, temperature stable > Short circuit withstand time - 10ps > Low V CEsat > Easy parallel switching capability due to positive temperature coefficient in VCEsat • Enhanced avalanche capability APPLICATION • Uninterruptible Power Supplies • Solar inverter • Welding • PFC applications

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RGW40N120F1A 1200V /40A Trench Field Stop IGBT-3

Switching Characteristic, Inductive Load Parameter

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Fall time Turn-off energy Electrical Characteristics of the DIODE（Tj= 25℃ unless otherwise specified） Parameter Dynamic Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current Fig. 2 Load Current vs. Frequency 160 140 Fig. 3 Power dissipation as a function of TC Fig. 4 Short circuit time and current vs

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Fig. 6 Saturation voltage characteristics Fig. 7 Switching times vs. gate resistor Fig. 8 Switching times vs. collector current

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Common Emitter Common Emitter Fig. 9 Switching loss vs. gate resistor Fig. 10 Switching loss vs. collector current 14 Common Emitter Fig. 11 Gate charge characteristics http://www.rongtechpower.com/

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