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  2. Rongtech Industry (Shanghai) Inc.,
  3. RGW25N135F1A 1350V /25A Trench Field Stop IGBT

RGW25N135F1A 1350V /25A Trench Field Stop IGBT
1 /7Pages

RGW25N135F1A 1350V /25A Trench Field Stop IGBT

RGW25N135F1A 1350V /25A Trench Field Stop IGBT
1 /7Pages

Catalog excerpts

RGW25N135F1A 1350V /25A Trench Field Stop IGBT-1

Rongtech Field Stop Trench IGBTs offer low switching losses, high energy efficiency and high avalanche ruggedness for soft switching applications such as inductive heating, microwave oven, etc. FEATURES • High breakdown voltage to 1350V for improved reliability • Trench-Stop Technology offering : > High speed switching > High ruggedness, temperature stable > Low V CEsat > Easy parallel switching capability due to positive temperature coefficient in VCEsat • Soft current turn-off waveforms • Enhanced avalanche capability APPLICATION • Inductive cooking • Inverterized microwave ovens • Resonant converters • Soft switching applications

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RGW25N135F1A 1350V /25A Trench Field Stop IGBT-2

Rongtech Industry (ShangHai) Inc. RGW25N135F1A Maximum Ratings

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RGW25N135F1A 1350V /25A Trench Field Stop IGBT-3

Rongtech Industry (ShangHai) Inc. RGW25N135F1A Switching Characteristic, Inductive Load Parameter

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RGW25N135F1A 1350V /25A Trench Field Stop IGBT-4

Rongtech Industry (ShangHai) Inc. RGW25N135F1A

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RGW25N135F1A 1350V /25A Trench Field Stop IGBT-5

Rongtech Industry (ShangHai) Inc., IGBT Characteristics Fig. 1 Output characteristics Fig. 2 Saturation voltage characteristics 90 Fig. 3 Turn-off time vs. gate resistor Fig. 4 Turn-off time vs. collector current 1000 Common Emitter Common Emitter

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RGW25N135F1A 1350V /25A Trench Field Stop IGBT-6

Rongtech Industry (ShangHai) Inc., IGBT Characteristics Fig. 5 Switching loss vs. gate resistor Fig. 6 Switching loss vs. collector current Common Emitter Fig. 7 Gate charge characteristics Ciss(pF) Ciss(pF) Crss(pF) 12 Common Emitter Common Emitter VGE = 0V, f = 1MHz Ta=25℃

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RGW25N135F1A 1350V /25A Trench Field Stop IGBT-7

Rongtech Industry (ShangHai) Inc.,

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