RGW25N135F1A 1350V /25A Trench Field Stop IGBT

Product catalog summary

Overview: Rongtech Field Stop Trench IGBTs are designed for high energy efficiency and low switching losses, suitable for soft switching applications like inductive heating and microwave ovens. They offer high breakdown voltage, enhanced avalanche capability, and easy parallel switching.

Features:

High breakdown voltage up to 1350V for improved reliability.
Trench-Stop Technology provides high-speed switching, high ruggedness, temperature stability, and low VCEsat.
Soft current turn-off waveforms and enhanced avalanche capability.

Applications:

Inductive cooking
Inverterized microwave ovens
Resonant converters
Soft switching applications

Maximum Ratings:

Collector-Emitter Breakdown Voltage: 1350V
DC Collector Current: 50A at 25°C, 25A at 100°C
Operating Junction Temperature: -40 to +150°C
Storage Temperature: -55 to +150°C
Soldering Temperature: 260°C

Thermal Resistance:

IGBT junction-case: 0.48 K/W
Diode junction-case: 1.2 K/W
Junction-ambient: 40 K/W

Electrical Characteristics:

Collector-Emitter Breakdown Voltage: 1350-1450V
Gate Threshold Voltage: 5.1-6.4V
Collector-Emitter Saturation Voltage: 2.0-2.5V
Zero Gate Voltage Collector Current: <1-1000 μA
Gate-Emitter Leakage Current: up to 100 nA

Dynamic Characteristics:

Input Capacitance: 2500 pF
Output Capacitance: 70 pF
Reverse Transfer Capacitance: 50 pF
Gate Charge: 125 nC

Switching Characteristics:

Turn-off Delay Time: 180-220 nS
Fall Time: 40-90 nS
Turn-off Energy: 0.32-0.65 mJ

Diode Characteristics:

Diode Forward Voltage: 2.3V
Reverse Recovery Time: 460 nS
Reverse Recovery Current: 17 A
Reverse Recovery Charge: 3600 nC

Graphical Data:

Output characteristics and saturation voltage characteristics are provided.
Switching loss and gate charge characteristics are illustrated.
Capacitance characteristics are shown for different conditions.

Catalog excerpts

RGW25N135F1A 1350V /25A Trench Field Stop IGBT-1

Rongtech Field Stop Trench IGBTs offer low switching losses, high energy efficiency and high avalanche ruggedness for soft switching applications such as inductive heating, microwave oven, etc. FEATURES • High breakdown voltage to 1350V for improved reliability • Trench-Stop Technology offering : > High speed switching > High ruggedness, temperature stable > Low V CEsat > Easy parallel switching capability due to positive temperature coefficient in VCEsat • Soft current turn-off waveforms • Enhanced avalanche capability APPLICATION • Inductive cooking • Inverterized microwave ovens • Resonant converters • Soft switching applications

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RGW25N135F1A 1350V /25A Trench Field Stop IGBT-2

Rongtech Industry (ShangHai) Inc. RGW25N135F1A Maximum Ratings

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RGW25N135F1A 1350V /25A Trench Field Stop IGBT-3

Rongtech Industry (ShangHai) Inc. RGW25N135F1A Switching Characteristic, Inductive Load Parameter

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RGW25N135F1A 1350V /25A Trench Field Stop IGBT-4

Rongtech Industry (ShangHai) Inc. RGW25N135F1A

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RGW25N135F1A 1350V /25A Trench Field Stop IGBT-5

Rongtech Industry (ShangHai) Inc., IGBT Characteristics Fig. 1 Output characteristics Fig. 2 Saturation voltage characteristics 90 Fig. 3 Turn-off time vs. gate resistor Fig. 4 Turn-off time vs. collector current 1000 Common Emitter Common Emitter

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RGW25N135F1A 1350V /25A Trench Field Stop IGBT-6

Rongtech Industry (ShangHai) Inc., IGBT Characteristics Fig. 5 Switching loss vs. gate resistor Fig. 6 Switching loss vs. collector current Common Emitter Fig. 7 Gate charge characteristics Ciss(pF) Ciss(pF) Crss(pF) 12 Common Emitter Common Emitter VGE = 0V, f = 1MHz Ta=25℃

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