RFR30F60PN_Datasheet 30A, 600V SUPER-FAST RECOVERY RECTIFIER DESCRIPTION RFR30F60PN is a Super-Fast Recovery Diode, fabricated in advanced silicon planar epitaxial technology. The process parameter and the device structure are fine tuned with optimized performance of forward voltage drop and reverse recovery time. Accuracy epitaxial dope control, advanced planar junction terminal structure and the platinum doped life control, guarantee the best overall performance, ruggedness and reliability characteristics. RFR30F60T2/PN is intended for use in the output rectification stage of SMPS, UPS, DC-DC converters as well as free-wheeling diode in low voltage inverters and chopper motor drivers. Ultrafast 60 Nanosecond Recovery Time Low Forward Voltage Drop High surge current capability Low reverse current leakage 150°C Operating Junction Temperature current capability ORDERING INFORMATION Part No. RFR30F60PN Rongtech Industry(ShangHai) Inc., Http://www.rongtechpower.com

RFR30F60PN_Datasheet ABSOLUTE MAXIMUM RATINGS Characteristics Average Rectified Forward Current Total Device Peak Repetitive Reverse Voltage Operation Junction Temperature Range Storage Temperature Range ELECTRICAL CHARACTERISTICS Characteristics Maximum Rated DC Voltage, TC=25°C Maximum Reverse Recovery Time IF=0.5 Amp, IR=1.0Amp, IREC=0.25Amp Maximum Instantaneous Reverse Current Forward Voltage TYPICAL CHARACTERISTICS CURVE Figure 1. Forward Characteristic Figure 2. Reverse Characteristic 102 101 Reverse Current - IR(μA) Rongtech Industry(ShangHai) Inc., Http://www.rongtechpower.com

RFR30F60PN_Datasheet Figure 4. Junction Capacitance Characteristic Figure 3. Power Dissipation (Perleg) 200 180 Junction Capacitance - CJ(pF) Average Power Dissipation- P(W) Average Forward Current - IF(A) Rongtech Industry(ShangHai) Inc., Http://www.rongtechpower.c