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Rongtech Industry (Shanghai) Inc.,
GT100HF120T1VH IGBT module

GT100HF120T1VH IGBT module

Product catalog summary

Overview: The GT100HF120T1VH is an IGBT module designed for industrial applications, featuring low switching loss, low saturation voltage, and high reliability. It is compliant with RoHS requirements and suitable for use in industrial inverters, servo applications, electric vehicles, and induction heating.

Features:

Short Circuit Rated for 10μs
Low Switching Loss
Low Saturation Voltage: VCE (sat) = 1.98V at IC = 100A, TC=25℃
100% RBSOA Test (2×Ic)
Low Stray Inductance
HI-REL Power Terminals
Lead-Free and RoHS Compliant

Applications:

Industrial Inverters
Servo Applications
Electric and Hybrid Electric Vehicles (EV and EHV)
Induction Heating

Absolute Maximum Ratings:

Collector-Emitter Blocking Voltage (VCES): 1200 V
Gate-Emitter Voltage (VGES): ±20 V
Continuous Collector Current (IC): 100 A at TC = 80℃, 180 A at TC = 25℃
Peak Collector Current (ICM): 200 A at TJ = 125℃
Maximum Power Dissipation (PD): 880 W at TC = 25℃
Maximum Junction Temperature (TJ): 175 ℃
Operating Temperature (TJ op): -40 to +150 ℃
Storage Temperature (Tstg): -40 to +125 ℃
Isolation Voltage (Viso): 2500 V

Electrical Characteristics:

Collector-Emitter Breakdown Voltage (V(BR)CES): 1200 V
Collector-Emitter Leakage Current (ICES): 400 μA at TJ = 25℃, 1 mA at TJ = 125℃
Gate-Emitter Threshold Voltage (VGE(th)): 4.5 to 6.5 V
Collector-Emitter Saturation Voltage (VCE(sat)): 1.98 to 2.50 V
Input Capacitance (Cies): 13.7 nF
Output Capacitance (Coes): 0.78 nF
Turn-on Delay Time (td(on)): 240 ns
Turn-off Delay Time (td(off)): 420 ns
Turn-on Switching Loss (Eon): 9.1 mJ
Turn-off Switching Loss (Eoff): 5.5 mJ

Thermal Resistance Characteristics:

Junction-To-Case (IGBT Part, Per Leg): 0.17 ℃/W
Junction-To-Case (Diode Part, Per Leg): 0.27 ℃/W
Case-To-Sink (Conductive Grease Applied): 0.10 ℃/W

Figures and Graphs:

Fig.1: Typical Load Current vs. Frequency
Fig.2: Typical Saturation Voltage Characteristics
Fig.3: Typical Output Characteristics
Fig.4: Forward Characteristics of FWD
Fig.5: Capacitance Characteristics
Fig.6: Typical Switching Loss vs. Collector Current
Fig.7: Typical Switching Loss vs. Gate Resistance
Fig.8: Reverse Bias Safe Operation Area (RBSOA)

Disclaimer: The information in this document is believed to be accurate and reliable. However, Rongtech does not provide any warranties regarding the accuracy or completeness of the information and reserves the right to make changes without notice.

Catalog excerpts

GT100HF120T1VH IGBT Module Features Short Circuit Rated 10μs Low Switching Loss Low Saturation Voltage: VCE (sat) = 1.98V @ IC = 100A , TC=25℃ 100% RBSOA Test (2×Ic) Low Stray Inductance HI-REL Power Terminals Lead Free, Compliant With RoHS Requirement Applications Industrial Inverters Servo Applications EV And EHV Induction Heating Internal Circuit Diagram Absolute Maximum RatingsTC = 25℃ unless otherwise specified Symbol Description Value Units VCES Collector-Emitter Blocking Voltage 1200 V VGES Gate-Emitter Voltage ±20 V IC Continuous Collector Current TC = 80℃ 100 A TC = 25℃ 180 A ICM(1) Peak Collector Current Repetitive TJ = 125℃ 200 A IF Diode Continuous Forward Current TJ = 125℃ 100 A IFM Peak FWD Current Repetitive 200 A 880 W 175 ℃ TC = 25℃ TJmax=175℃ PD Maximum Power Dissipation Per Leg TJ Maximum Junction Temperature TJ op Operation Temperature -40 +150 ℃ Tstg Storage Temperature -40 +125 ℃ Viso Isolation Voltage(All Terminals Shorted) 2500 V Mounting Torque Power Terminals Screw:M5 f = 50Hz, 1minute 5.0 N·m Mounting Screw:M6 6.0 N·m Notes : (1) Repetitive Rating: Pulse width limited by max. junction temperature

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Electrical Characteristics of IGBT TJ = 25℃ unless otherwise specified Symbol Description Test Conditions Min. Typ. Max. Units OFF Characteristics V(BR)CES Collector-Emitter Breakdown Voltage VGE = 0V, IC = 1mA 1200 V ICES Collector-Emitter Leakage Current VGE = 0V, VCE = VCES TJ = 25℃ 400 μA TJ = 125℃ 1 mA IGES Gate-Emitter Leakage Current VGE = VGES, VCE = 0V TJ = 25℃ 300 nA TJ = 125℃ 600 nA 6.5 V ON Characteristics VGE(th) Gate-Emitter Threshold Voltage IC = 1 mA, VCE = VGE VCE(sat) Collector-Emitter Saturation Voltage IC = 100A , VGE = 15V 4.5 5.2 TJ = 25℃ 1.98 2.20 V TJ = 125℃ 2.27 2.50...

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Electrical Characteristics of FWDTJ = 25℃ unless otherwise specified Symbol Description VFM Reverse Recovery Time Irr Peak Reverse Recovery Current Qrr IF100A, di/dt =650A/μs, Vrr = 600V, VGE = -15V Reverse Recovery Charge Typ. Max. TJ = 25℃ 2.2 2.4 TJ = 125℃ 2.4 TJ = 25℃ IF=100A, VGE = 0V Forward Voltage trr Test conditions Min. 270 TJ = 125℃ 420 TJ = 25℃ 40 TJ = 125℃ 50 TJ = 25℃ V ns A 4.7 TJ = 125℃ Units 10.6 µC Thermal Resistance Characteristics Symbol Description Typ. Max. Units RθJC Junction-To-Case (IGBT Part, Per Leg) 0.17 ℃/W RθJC Junction-To-Case (Diode Part, Per Leg) 0.27 ℃/W RθCS...

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Brand Logo Date Code Part Number Circuit Diagram

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General — Information in this document is believed to be accurate and reliable. However.Rongtech does not give any représentions or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes Rongtech reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof....

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GT100HF120T1VH IGBT module

GT100HF120T1VH IGBT module

Catalog excerpts

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