SiC POWER DEVICES POWER THE FUTURE SiC Wafer SiC Diode(SBD) SiC MOSFET SiC Power Module

SiC Devices Contribute to Greater Energy Savings and Set Miniaturization A wider bandgap gives SiC 10x the dielectric breakdown electric field strength of silicon. High efficiency ency Energy-saving ving This allows SiC MOSFETs to operate at up to 3,000V, compared to High voltage just 1,000V with conventional silicon MOSFETs. At the same time, SiC MOSFETs provide reduced ON resistances even at high voltages along with low turn ON/OFF losses, making them truly the best devices for achieving high efficiency and energy savings. Another advantage of SiC’s large bandgap is the ability to operate at...

Combining 20+ years of knowledge and technologies with a reliable production system ROHM SiC Devi ROHM s SiC Device Business HM's v usiness ines ROHM has been conducting pioneering research on SiC devices since 2000, when we first discovered the remarkable benefits of SiC. But although the superior characteristics have been recognized in the industry, the lack of performance and mass production stability have proven to be a bottleneck. Unlike other suppliers, ROHM is able to complete the entire process, from wafer fabrication to device design and packaging, utilizing an in-house production system....

ROHM SiC Device Lineup ON Resistance (mΩ) Device Form Device Type Diode （SBD） Wafer Chip Wafers are diced and shipped. Requires customers to perform die and wire bonding. Discrete(Molded Package) In addition to the TO-220 and TO-247, our broad package lineup includes the surface mount TO-263 and TO-268 types. Breakdown Voltage Full SiC Power Modules Three types of SiC power modules are offered that can drive up to 1,200V/600A. SiC MOSFET SiC Diode AC/DC Converter IC with Built-in SiC MOSFET Includes the world’s first AC/DC converters that leverage the advantages of SiC, such as higher efficiency...