Catalog excerpts
Power Device Catalog Ver.6.0
Open the catalog to page 1For a sustainable world Contributing to a sustainable world through the development of innovative power devices. ROHM Power Device Catalog
Open the catalog to page 2INDEX SiC Power Devices SiC MOSFET Full SiC Power Modules SiC Schottky Barrier Diodes GaN Power Devices GaN Power Devices ROHM EcoGaNTM Devices IGBT Ignition IGBT Field Stop Trench IGBT High Voltage Discretes Fast Recovery Diodes 4th Gen Fast Recovery Diodes Super Junction MOSFET SiC Peripheral ICs Isolated Gate Drivers AC/DC Converter ICs with Built-In SiC MOSFET ROHM Solution Simulator Resistors for Current Detection Shunt Resistors Production System ROHM Group Locations ROHM Power Device Catalog
Open the catalog to page 3Power Devices SiC Devices Contribute to Greater Energy Savings and Set Miniaturization Energy conservation and higher efficiency in electrical equipment have become major issues as countries around the world work towards carbon neutrality. The switch from conventional cars powered by fossil fuels to electric vehicles (EVs), 5G communication base stations and data servers that support the evolution of digital transformation (DX), and industrial equipment that is undergoing rapid technological innovation are all requiring more energy-efficient systems. Comparison of Physical Properties...
Open the catalog to page 4SiC Power Devices Greater Efficiency and Energy Savings A wider bandgap gives SiC 10x the dielectric breakdown electric field strength of silicon. This allows SiC MOSFETs to operate at up to 3,000V, compared to just High voltage 1,000V with conventional silicon MOSFETs. At the same time, SiC MOSFETs are characterized by reduced ON resistances even at high voltages, along with low turn ON/OFF losses. This makes them ideal for high efficiency and energy savings. Stable operation even at high temperatures Another advantage of SiC’s large bandgap is the ability to operate at high temperatures....
Open the catalog to page 5SiC MOSFET High Speed・Low ON Resistance Simultaneously delivers high speed switching with Low ON resistance not possible with silicon devices, along with excellent electrical temperature characteristics even in the high temperature regime. This contributes to fewer parts, lower switching loss, and smaller peripheral components. ■ ON Resistance Temperature Characteristics (650V Class) ■ Turn OFF Characteristics (1,200V Class) 90% lower switching loss! Si-IGBT Si-MOSFET 8 Difficult for ON resistance to increase even at high temperatures Si-Super Junction MOSFET Comparison of the Physical...
Open the catalog to page 6Further evolving our original double trench structure Achieves class-leading low ON resistance. However, with these 4th Gen SiC MOSFETs, ROHM has successfully reduced ON resistance by 40% compared to conventional products without sacrificing short-circuit withstand time by further improving its original double trench design. The result is SiC MOSFETs with the lowest ON resistance in the industry*. In addition, ROHM was able to achieve 50% lower switching loss over conventional products by significantly reducing the gate-drain capacitance (Qgd). These features make it possible to...
Open the catalog to page 7SiC Power Devices SiC MOSFET 4th Gen (Trench type) Part No. ☆ ☆ ☆ ☆ ☆ ☆ ☆ ☆ ☆ ☆ ☆ ☆ ☆ ☆ ☆ ☆ ☆ ☆ ☆ ☆ ☆ ☆ ☆ ☆ ☆ ☆ ☆ ☆ ☆ ☆ ROHM Power Device Catalog Note : Package indicates JEDEC code. ( ) denotes ROHM package type, 〉 〈 indicates the packaging symbol RDS(on) Typ(mΩ) 3rd Gen (Trench type) Part
Open the catalog to page 8Full SiC Power Modules Full SiC Power Modules Full SiC Power Modules 80% lower switching loss ROHM developed low surge noise power modules using SiC devices that takes advantage of the high-speed performance of SiC. This translates to significantly lower switching loss compared with silicon IGBTs. Full SiC power modules are also being developed with higher current ratings using 3rd gen SiC MOSFETs. ■ Switching Loss Comparison ■ Internal Circuit Example (Half Bridge Circuit) Carrier Frequency = 20kHz SiC MOSFET 80% lower switching loss vs silicon IGBTs Switching loss S1D2 Thermistor for...
Open the catalog to page 9SiC Schottky Barrier Diodes Dramatically Lower Switching Loss ■ Switching Waveforms (600V/10A Products) ROHM SiC SBDs are ideal for PFC circuits and inverter applications. Fast switching is possible due to the extremely short reverse recovery time (trr) not possible with silicon FRDs (Fast Recovery Diodes). The result is low reverse recovery charge (Qrr) that reduces switching loss and contributes to set miniaturization. Reduces switching loss by 60% ROHM continues to improve its device processes and implement low VF in line with generational changes ■ Achieving lower VF together with...
Open the catalog to page 10SiC Schottky Barrier Diodes SiC Schottky Barrier Diodes SiC Schottky Barrier Diodes Absolute Max. Ratings (Tj=25°C) Equivalent Circuit Diagram Notes: Package indica
Open the catalog to page 11Power Devices GaN power devices from the SiC pioneer Expanding the Applicability of Power Devices The power capacity and operating frequency range of power devices can vary greatly depending on their material(s) and structure. ROHM SiC MOSFETs and GaN HEMTs are cutting-edge devices that provide greater energy savings and miniaturization. GaN HEMTs in particular feature high cutoff frequency (fT) - an indicator of high frequency characteristics - and large electron mobility in terms of bandgap energy, making them ideal for high-frequency operation in the medium voltage range. ROHM has begun...
Open the catalog to page 12ROHM EcoGaNTM Devices ROHM EcoGaNTM Devices ROHM EcoGaNTM Devices (GaN HEMTs) Significantly reduces switching loss compared with silicon MOSFETs Ensures high efficiency even in high-speed 1MHz DC/DC power supply circuits ROHM EcoGaNTM (GaN HEMTs) can switch at 1/20th the Ron∙Qg as Switching loss can be significantly reduced and high efficiency silicon MOSFETs. This results in dramatically lower switching loss. conversion achieved with a compact coil and capacitor even in circuits with very high oscillation frequency, contributing to set miniaturization. Switching Loss Comparison 98 Loss Ratio...
Open the catalog to page 13Contributes to improved efficiency and energy energy savings in a wide range of high voltage/current applications Insulated Gate Bipolar Transistors Ignition IGBT Ignition IGBT High reliability products combine low VCE(sat) and high avalanche resistance ideal for automotive ignition applications • Provides industry-leading efficiency by improving the trade-off between saturation voltage and avalanche withstand capacity • Integrated Gate protection diode • Gate resistor/Gate-Emitter resistor (optional) • AEC-Q101 qualified *ROHM April 2022 study ■ Circuit Diagram Ex. Automotive Ignition Coil...
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