Inverse tee TSC-IT-01025 DATASHEET Version1- http://www.teledyne-si.com/schottky_diodes/index.html GaAs Schottky diode –Inverse tee TSC-IT-01025 Junction capacitance as low as 1fF allowing cutoff frequency >2THz Very low parasitic capacitance < 9fF Ultra low series resistance Airbridged anode contact for low parasitic operation Fully passivated by SiN Flip chip and beamlead geometry Anode metalization optimized for reliable optimization MMIC backend process available for integrated passives and vias Unique gold stand-off platforms for ruggedness in flip-chip applications Description Ideality Junction Capacitance Capacitance Total Series Reistance Forward Voltage Reverse Breakdown Voltage Saturation Current Part Number Ideality(N) is measured using N=1/(Vth*ln(10)*m) where m=I(0.62v)-I(0.48v)/0.62-0.48 and Vth=K*T/q Is is measured using Is=I(V_0) VBr is measured at reverse bias current compliance of –5uA VF is measured at forward current of 1mA Rs is measured using Rs = 111.11*((V@5mA-V@500uA)-(V@100uA-V@10uA)) ♦ Junction capacitance is calculated based on the device area and a fixed capacitance per unit area Ordering information PART NUMBER DESCRIPTION Inverse tee diode with Cj = 1.1 fF Teledyne Scientific Company reserves the right to make changes to its product specifications at any time without notice. The information furnished herein is believed to be accurate; however, no responsibility is assumed for its use.

SCIENTIFIC COMPANY Schottky Diode Model Dimensions in microns [mils] Teledyne Scientif c Company reserves the right to make changes to its product specifications at any time without notice. The information furnished herein is believed to be accurate; however, no responsibility is assumed for its use.