• High responsivity
• Low capacitance
• Suitable for Surface Mount Technology (SMT)
• High reliability
• Peak wavelength at 830 nm

The photosensor consists of a 6-chip photodiode array. These photodiodes are manufactured using planar technology and are passivated with silicon-nitride, which serves as an anti-reflective layer. They are bonded to a PCB and protected with transparent epoxy glue. The photodiode can operate in either photovoltaic or photoconductive mode.

• Storage: -35°C to +125°C
• Operating: -20°C to +80°C
• Reflow soldering: 220°C for 60 seconds

• Diode Dimensions: 2.3 x 0.9 mm
• Active Area: 1.46 mm²
• Dark Current: <1 nA
• Breakdown Voltage (BV): 50 V
• Capacitance: 22 pF
• Peak Wavelength: 830 nm
• Responsivity: 0.67 A/W
• Current (I_SC): 520 µA (measured under 100 mW/cm² AM spectrum)

The document includes a schematic diagram and dimensions of the photodiode array, illustrating the layout and connections of the photodiodes.

RLS merilna tehnika d.o.o., SI-1218 Komenda, Slovenia
Tel.: +386 1 5272100
Fax: +386 1 5272129
Email: [email protected]
Website: http://www.rls.si