RJP65S07DWT/RJP65S07DWA Data Sheet (650V - 150A - IGBT / Application: Inverter)

Product catalog summary

Overview: This datasheet provides technical specifications and operational guidelines for the RJP65S07DWT and RJP65S07DWA IGBT devices, designed for inverter applications. Key features include low collector to emitter saturation voltage and high-speed switching capabilities.

Specifications:

Collector to Emitter Voltage (VCES): 650 V
Gate to Emitter Voltage (VGES): ±30 V
Collector Current: 300 A at 25°C, 150 A at 100°C
Junction Temperature (Tj): Maximum 175°C

Electrical Characteristics:

Zero Gate Voltage Collector Current (ICES): Max 1 μA
Gate to Emitter Leak Current (IGES): Max ±1 μA
Collector to Emitter Saturation Voltage (VCE(sat)): Typical 1.5 V, Max 1.8 V
Switching Times: td(on) 90 ns, tr 100 ns, td(off) 530 ns, tf 70 ns
Short Circuit Withstand Time: Minimum 10 μs

Physical Dimensions: The datasheet includes detailed die dimensions and bonding pad layout, emphasizing the importance of thermal management to maintain junction temperature below 175°C.

Ordering Information: Part numbers for ordering are RJP65S07DWA-80#W0 and RJP65S07DWT-80#X0.

Usage and Liability Notices: The document outlines the responsibilities of the user in incorporating the device into their designs, emphasizing compliance with specified operating conditions and legal regulations. It also disclaims liability for damages resulting from misuse or unauthorized applications.

Catalog excerpts

RJP65S07DWT/RJP65S07DWA Data Sheet (650V - 150A - IGBT / Application: Inverter)-1

Features Low collector to emitter saturation voltage VCE(sat) = 1.5 V typ. (at IC = 150 A, VGE = 15 V, Tc = 25C) High speed Switching Short circuit withstands time (10 s min.) 1. Gate 2. Collector (The back) 3. Emitter Absolute Maximum Ratings (Tc = 25°C unless otherwise noted) Item Collector to emitter voltage Gate to emitter voltage Collector current Tc = 25°C Tc = 100°C Junction temperature Symbol VCES VGES IC IC Tj Notes: 1. Please use this device in the thermal conditions where the junction temperature does not exceed 175C. IGBT Application Note is disclosed about reliability test and application condition up to Tj = 175C.

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RJP65S07DWT/RJP65S07DWA Data Sheet (650V - 150A - IGBT / Application: Inverter)-2

Electrical Characteristics (Datas below are measured values on a package configuration.) (Tc = 25°C unless otherwise noted) Item Zero gate voltage collector current Gate to emitter leak current Gate to emitter cutoff voltage Collector to emitter saturation voltage Input capacitance Output capacitance Reveres transfer capacitance Switching time Note3 Short circuit withstand time Note4 Symbol ICES IGES VGE(off) VCE(sat) Cies Coes Cres td(on) tr td(off) tf Test Conditions VCE = 650 V, VGE = 0 VGE = ±30 V, VCE = 0 VCE = 10 V, IC = 3 mA IC = 150 A, VGE = 15 V Note2 VCE = 25 V VGE = 0 f = 1 MHz VCC...

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RJP65S07DWT/RJP65S07DWA Data Sheet (650V - 150A - IGBT / Application: Inverter)-3

Part of dotted line Bonding area Final passivation The back of the chip is processed with Au evaporation. Recognition, target and any other patterns which are not related to Diode operation, may be changed without notice. Ordering Information Orderable Part Number RJP65S07DWA-80#W0 RJP65S07DWT-80#X0

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RJP65S07DWT/RJP65S07DWA Data Sheet (650V - 150A - IGBT / Application: Inverter)-4

Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. Renesas Electronics assumes no responsibility for any losses incurred by you or third parties arising from the use of these circuits, software, or information. Renesas Electronics has used reasonable care in preparing the information included in this document, but Renesas Electronics does not...

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