Renesas Transistors / Thyristors / Triacs / Photocouplers Status List

Product catalog summary

Introduction
The document introduces the µPA276X Series by Renesas, a line of ultra-low R_DS(on) MOSFETs designed for ORing applications. These components aim to enhance power efficiency and save space in network servers and storage systems by reducing resistance to less than 1mΩ.

Specifications
The µPA276X Series supports large currents, allowing for fewer devices in parallel configurations. It is particularly beneficial in systems with multiple power supplies running in parallel, preventing reverse current and supporting hot-plugging capabilities.

Features

Ultra-low R_DS(on) for improved power supply efficiency.
Support for large currents, reducing the number of parallel devices needed.
Prevents reverse current in parallel power supply systems.
Facilitates hot-plugging, allowing equipment removal while powered.

Product Lineup
The document lists various part numbers within the µPA276X Series, detailing their maximum ratings, including R_DS(on) values, V_DSS, V_GSS, and I_D. For example, the µPA2765T1A, µPA2766T1A, and µPA2764T1A are specified with a V_GS of 10V, V_DSS of 30V, and V_GSS of +20/-20V, with varying R_DS(on) values and current ratings.

Applications
These MOSFETs are suitable for use in server power supplies, network storage systems, and other applications requiring efficient power management and space-saving solutions.

Overview of Power MOSFETs
The document provides detailed specifications and characteristics of various Power MOSFETs used for general switching applications, including data on voltage, current, resistance, capacitance, and other electrical parameters.

Specifications
The document lists numerous Power MOSFET models, each with specific ratings such as VDSS (drain-source voltage), ID (drain current), RDS(on) (on-resistance), Ciss (input capacitance), and QG (gate charge). These parameters are crucial for determining the suitability of a MOSFET for particular applications.

Key Parameters

VDSS: Ranges from low voltages suitable for small applications to high voltages for more demanding uses.
ID: Indicates the maximum current the MOSFET can handle.
RDS(on): A critical factor affecting efficiency, with lower values indicating better performance.
Ciss and QG: Affect the switching speed and efficiency of the MOSFET.

Applications
These MOSFETs are used in various sectors, including automotive and general electronics, for tasks such as switching and amplification.

Recommendations
Selection of a MOSFET should be based on the specific requirements of the application, considering factors like voltage, current, and thermal performance.

Overview of Optical Coupled MOSFETs
The document provides detailed specifications and characteristics of various optical coupled MOSFETs (Solid State Relays) and their packaging options, including technical parameters, performance metrics, and packaging details for different models.

Specifications

Voltage and Current Ratings: Maximum forward voltage (VF) is 1.4 V, reverse current (IR) is 5 μA, and maximum forward current (IF) is 50 mA per channel. Power dissipation is capped at 50 mW per channel.
Isolation Voltage: Rated at 1,500 Vr.m.s. for most models, with some variations at 500 Vr.m.s.
Temperature Range: Operating ambient temperature ranges from -40 to +85°C, and storage temperature ranges from -40 to +100°C.

Optical Coupled MOSFET Characteristics

4pin-SOP Type: Includes models like PS7206-1A, PS7241E-1A, and PS720C-1A with breakdown voltages ranging from 60 V to 400 V, continuous load currents from 120 mA to 1.25 A, and on-state resistances from 0.1 Ω to 35 Ω.
4pin-Small Flat-lead Type: Models such as PS7901D-1A, PS7902-1A, and PS7904-1A feature breakdown voltages of 40 V to 60 V, continuous load currents from 120 mA to 400 mA, and on-state resistances from 1.1 Ω to 16 Ω.
4pin-Mini Flat-lead Type: The PS7804-1A model has a breakdown voltage of 60 V, continuous load current of 400 mA, and on-state resistance of 1.1 Ω.

Packaging and Taping Specifications

Various package types are detailed, including DIP, SOP, SSOP, and Mini Flat-lead, with specific dimensions and packing options.
Standard taping specifications are provided for different package sizes, including packing quantities and device direction.

Additional Information

Tables provide symbols and classifications for package types, lead bending, breakdown voltage, and continuous load current.
Halogen-free and lead-free options are indicated with specific symbols.

Catalog excerpts

Renesas Transistors / Thyristors / Triacs / Photocouplers Status List-1

Renesas Transistors / Thyristors / Triacs / Photocouplers Status List Topic_Introduction of Ultra Low Ron MOS FET for ORing "µPA276X Series" - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 2 Index - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 3 to 7 Transistor with Internal Resistor - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - -8 Bipolar Transistor - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 9 Power Bipolar Transistor - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - -9 Small Signal Bip-TRSs for General Amplifier - - - - - - - - - - - - - - - - - - - - - - - - - - - - -10 Small Signal Bip-TRSs for General Switching - - - - - - - - - - - - - - - - - - - - - - - - - - - -10 Small Signal Bip-TRSs for High Frequency Amplifier - - - - - - - - - - - - - - - - - - - - - - 11 Power MOSFETs for High Frequency Amplifier - - - - - - - - - - - - - - - - - - - - - - - - - -11 Twin-type MOSFETs for High Frequency Amplifier - - - - - - - - - - - - - - - - - - - - - - - 12 12 Small Signal FETs for High Frequency Amplifier - - - - - - - - - - - - - - - - - - - - - - - - - Junction Field Effect Transistor(J-FET) - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - -12 Part No. Designation - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 13 to 16 Power MOSFETs for General Switching - - - - - - - - - - - - - - - - - - - - - - - - - - -17 to 31 Power MOSFETs for General Amplifier - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 32 Power MOSFETs Power MOSFETs for Small Power - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - -32 Power MOSFETs for Small Signal - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 33 Power MOSFETs for Protection use of Cellular Phone Battery - - - - - - - - - 33 Power MOSFETs for Protection use of PC and Battery - - - - - - - - - - - - - - -33 Thermal Shut Down Functioned MOSFET - - - - - - - - - - - - - - - - - - - - - - - - -33 Driver IC - MOSFET Integrated SiP (DrMOS) - - - - - - - - - - - - - - - - - - - - - - -33 PWM Controller - MOSFET Integrated SiP (POL-SiP) - - - - - - - - - - - - - - - - 33 Power MOSFETs for Automobile use - - - - - - - - - - - - - - - - - - - - - - - - - - - - 33 IPD [Intelligent Power Devices] - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 34 IGBT IGBTs for General use - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 34 34 IGBTs for Strobe use - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - Fast Recovery Diodes - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - -35 Compound Power Devices - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - -35 Triacs - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 36,37 Thyristors - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 37 Photocouplers / Optical Coupled MOSFETs(Solid State Relay) - - - - - - - - - -38 to 46 Package and Standard Taping Specifications - - - - - - - - - - - - - - - - - - - - - - - 47 to 50 Surface Mount Type Marking - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - -51 Renesas VP_Renesas Power MOSFETs Simulation Site - - - - - - - - - - - - - - - - - - -51

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Renesas Transistors / Thyristors / Triacs / Photocouplers Status List-2

Introduction of Ultra Low Ron MOS FET for ORing "μPA276X Series" Outlines Renesas has developed power MOSFETs with ultra low RDS(on). These products contribute to power-saving and space-saving in network servers and storage system. Features Improve power supply efficiency Improve efficiency of power supply using ultra low Ron device (<1mΩ) Reduce quantity of devices used Support for large current enables quantity of devices used in parallel to be reduced. Block diagram of the server power supply circumference Main Power ORing Power Supply System(1) ORing Power Supply System(2) ORing Power Supply...

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Renesas Transistors / Thyristors / Triacs / Photocouplers Status List-3

Index Products Transistor with Internal Resistor Bipolar Transistor Power Bipolar Transistor Small Signal Bip-TRSs for General Amplifier Small Signal Bip-TRSs for General Switching Small Signal Bip-TRSs for High Frequency Amplifier Power MOSFETs for High Frequency Amplifier Twin-type MOSFETs for High Frequency Amplifier Small Signal FETs for High Frequency Amplifier Junction Field Effect Transistor(J-FET) Power MOSFETs for General Switching Power MOSFETs for General Amplifier Power MOSFETs for Small Power Power MOSFETs for Small Signal Power MOSFETs for Protection use of Cellular Phone Battery...

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Renesas Transistors / Thyristors / Triacs / Photocouplers Status List-8

Equivalent Circuit Symbol Notes) Production Status Ordering Condition O: In Mass Production SPL: Samples are available : Long delivery date(Lead time: 3 months) ---------------------------------------------------------------: Large order only (Unit: Refer to packing unit (P.47 to 49))

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Renesas Transistors / Thyristors / Triacs / Photocouplers Status List-9

Bipolar Transistor Package SOT-23F Power Bipolar Transistor Package MP-10 Notes) Production Status Ordering Condition Device Type Low VCE(sat) High hFE Low VCE(sat) Low Voltage, High Speed Switching 30000 Low Voltage, High Speed Switching 40 200 30000 Low Voltage, High Speed Switching 100 400 35000 Low VCE(sat) 100 400 40000 Low VCE(sat) 40 200 40000 Audio Frequency Amplification 40 200 40000 Audio Frequency Amplification 100 400 25000 40 200 40000 Low Voltage, High Speed Switching 20 80 40000 40 200 30000 Low Voltage, High Speed Switching 40 200 30000 Low Voltage, High Speed Switching 100 400...

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Renesas Transistors / Thyristors / Triacs / Photocouplers Status List-10

Small Signal Bip-TRSs for General Amplifier Part No. 2SA1226 Package UPAK Package MPAK Small Signal Bip-TRSs for General Switching Package 3pin PoMM MP-2 Notes) Production Status Ordering Condition Device Type O: In Mass Production SPL: Samples are available : Long delivery date(Lead time: 3 months) ---------------------------------------------------------------: Large order only (Unit: Refer to packing unit (P.47 to 49))

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