2009. RenesasTechnology Corp., All rights reserved. >

High-frequency transistors(Dual-gate MOS FETsand bipolar transistors) Power MOS FETsfor power management(CMFPAK-6, MPAK, UPAK series) > : Any page with this marking is a newly added page. 2009. RenesasTechnology Corp., All rights reserved.RenesasSmall Signal Transistors General Presentation size="-2">

RenesasHigh components, Inc. RSM > RenesasSemiconductor(Malaysia) Sdn. Bhd. RenesasSemiconductor (Malaysia) Sdn. Bhd. Small signal transistors:UPAK, CMPAK-6Power transistors:LFPAK, CMFPAK-6, TSSOP-8 Small signal transistors:UPAK, TO-92, TO-92M, MPAK, MPAK-4,CMPAK, CMPAK-4, CMPAK-6Power transistors:SOP-8 (JEDEC),DPAK, LDPAK, TO-263, TO-220AB, TO-220FM,TO-220CFM, TO-3P, TO-3PL, TO-3PFM > 2009. RenesasTechnology Corp., All rights reserved.RenesasSmall Signal Transistors General Presentation size="-2">

Untitled table.main {} tr.row {} td.cell {} div.block {} div.paragraph {} .font0 { font:5.00pt "Arial", sans-serif; } .font1 { font:6.00pt "Arial", sans-serif; } .font2 { font:8.00pt "Arial", sans-serif; } .font3 { font:13.00pt "Arial", sans-serif; } .font4 { font:27.00pt "Arial", sans-serif; } .font5 { font:9.00pt "Trebuchet MS", sans-serif; } High Frequency Transistor Package Trend SON0202-6 MPAK3015 SOT-346 Major Devices Major Applications Available Package TV tuner, VTR tuner, cable MODEM, various wireless devices Wide bandwidth low distortion amplification High output buffer amplification...

Main applications: Digital TV, PC tuners, TV or VCR tunersTechnical trend:Low cost and low operating voltage3/4 cut components and compatibility for TV tuners use and PC tuners useHigh performance3/4 reduced noise to improve sensitivity and reduced distortion to supportdigital broadcasting -Including the bias circuit decreases the operating voltage andreduces the number of components-Expands product lineup of 2 in 1 package (CMPAK-6). > Strategy TBB1002: BB502 and BB305 (A) TBB1004: UHF: BB502 (B)VHF: |yfs| = 32 mSchipTBB1005: Pin modified version of TBB1002 (C) TBB1010: BB504 > BB-(2)VHF RF...

2009. RenesasTechnology Corp., All rights reserved.RenesasSmall Signal Transistors General Presentation size="-2">

Electrodearrangement > 2.5 123Gate > 4.0 DrainSource 4Source > 123 4 Unit: mm > VDS = 6 VIDQ = 50 mAf = 520 MHz PAE = 68% VDS = 6 VIDQ = 200 mAf = 520 MHz Po = +33.0 dBm VDS = 6 VIDQ = 400 mA f = 520 MHz Po = +36.0 dBm VDS = 6 VIDQ = 180 mA f = 520 MHz Po = +37.8 dBm Pout PAE Pout Pout Pout PAE > Po = +29 dBm PAE = 68% PAE = 65% PAE = 68% PAE PG PG PG PAE > Efficiency PAE (%) Efficiency PAE (%) Efficiency PAE (%) Output Power Pout (dBm) Efficiency PAE (%) Output Power Pout (dBm) Output Power Pout (dBm) Output Power Pout (dBm) PG 01020304050 -551525020406080100 01020304050 0102030020406080100...

In response to market trends towards lower drivingvoltages 4.5 2.9 for various controller ICs, we have developedFET products that maintain prior drain-to-sourcewithstand voltage but have a lower gate-driving voltage. Package(mm) > 4.0 2.8 UPAK(SOT-89) MPAK(SOT-346) Drain-to-Source Voltage up to 60 V Combined with Gate-Driving Voltage of 2.5 VWe have developed MOS FETswith drain-to-sourcewithstand voltage of 60 V that are drivable by lowervoltage (lowered from 4.5 V to 2.5 V) > 2 )Pch(W) > -Supports 3.3 V MCUs Max. height (mm)Footprint (mm > Small Packages for General PurposeMOS FETsare available...

RenesasSmall Signal Transistors General Presentation Publication Date:Rev.1.00, July 2003Rev.25.00, July 10, 2009Published by: Sales Strategic Planning Div.RenesasTechnology Corp.Edited by: Customer Support DepartmentGlobal Strategic Communication Div.RenesasSolutions Corp. 2009. RenesasTechnology Corp. All rights reserved. Printed in JapanREJ13G0002-2500 > 2009. RenesasTechnology Corp., All rights reserved.RenesasSmall Signal Transistors General Presentation size="-1">

2009. RenesasTechnology Corp., All rights reserved. ɩ2009. RenesasTechnology Corp., All rights reserved.RenesasSmall Signal Transistors General Presentation >