2009. RenesasTechnology Corp., All rights reserved. >

Power MOS FETs > -Applications, Development Trends -Low-Voltage Power MOS FETs-10th Generation Power MOS FETs(V DSS = 30 V)-New Products: 10th Generation + SBD (Single/Dual)-Next Generation Products: 11th Generation Power MOS FETs-LFPAK-i Double-Sided Mounting Packages, P-ch. MOS FET Series, and Power-Saving Compact Package Series-Integrated Power Devices: IC and MOS FET-Medium-/High-Voltage Power MOS FETs IGBTsfor Strobe Flasher Triacsand Thyristors > : Any page with this marking is a newly added page. 2009. RenesasTechnology Corp., All rights reserved.RenesasPower MOS FETs, IGBTs, Triacsand...

Applications, Development Trends Low-Voltage Power MOS FETs 10th Generation Power MOS FETs(V > DSS = 30 V) New Products: 10th Generation + SBD (Single/Dual) Next Generation Products: 11th Generation Power MOS FETs LFPAK-i Double-Sided Mounting Packages, P-ch. MOS FET Series, and Power-Saving Compact Package Series Integrated Power Devices: IC and MOS FET Medium-/High-Voltage Power MOS FETs > 1-1 2009. RenesasTechnology Corp., All rights reserved.RenesasPower MOS FETs, IGBTs, Triacsand ThyristorsGeneral Presentation size="-3">

2009. RenesasTechnology Corp., All rights reserved.RenesasPower MOS FETs, IGBTs, Triacsand ThyristorsGeneral Presentation >

V > DSS = 12 V to 100 V > 1-5 2009. RenesasTechnology Corp., All rights reserved.RenesasPower MOS FETs, IGBTs, Triacsand ThyristorsGeneral Presentation size="-3">

High Frequency and Large CurrentMulti-chip Module QFN56 WPAK LFPAK > QFN40 CPUCore CPUCore Large Currentfor N/B PCCPU Core SOP-8DPAKD2PAKLFPAK-I > CPUCore WPAK (Dual) > High Density Packagefor N/B PC, POL Operating Current Iout (A) SOP-8 > DDRMemory High Low/SBD 1-6 > 2009. RenesasTechnology Corp., All rights reserved.RenesasPower MOS FETs, IGBTs, Triacsand ThyristorsGeneral Presentation size="-2">

SmallPOL > SmallerDrMOS 2 2 2 nd nd nd Gen. PKG Gen. PKG Gen. PKG Package High-sideMOS FET 2nd gen.DrMOS JETDrMOS > Driver IC 1 1 1 st st st Gen. PKG Gen. PKG Gen. PKG Package Smallerandlow loss (6 6 mm)Higher voltage(40 to 100 V) ++ > 1st gen.DrMOS Highfreq.andlowloss Parasiticinductance POL-SiP JET+SBD Low-sideMOS FET (IC+drive+MOS) QFN56 (8 8 mm) Built-inSBD WPAK-Dual Highfunctionality Compound HighFOM(Ron.Qg) 30 V 30 to 100 V > WPAKLFPAK-i WPAK (D) FOM: Figure of merit High Frequency and High Efficiency 1-7 > 2009. RenesasTechnology Corp., All rights reserved.RenesasPower MOS FETs, IGBTs,...

1-8 > 2009. RenesasTechnology Corp., All rights reserved.RenesasPower MOS FETs, IGBTs, Triacsand ThyristorsGeneral Presentation size="-1">

) Control ICfor PFCR2A20112 > Vg2Vg3Vg4Vg1 PWM + sync. rect. ICHA16163, R2A20121 > * * * SR:Synchronous rectifier > * POL: Point ofload DPS:Distributedpower supply VRM:Voltage regulatormodule > * PFC:Power factor correction circuit > * VRD:Voltage regulatordown > 2009. RenesasTechnology Corp., All rights reserved.RenesasPower MOS FETs, IGBTs, Triacsand ThyristorsGeneral Presentation size="-3">

PWMICVin = 12 VHigh side > Vout= 1.8 V SBD Memory L1C > MOSdriverMOSdriverMOSdriverMOSdriver Low side > ISEN1 ISEN2 ISEN3 ISEN4 2009. RenesasTechnology Corp., All rights reserved.RenesasPower MOS FETs, IGBTs, Triacsand ThyristorsGeneral Presentation size="-1">

1.8 V1.5 V1.3 V POL MemoryChipsetCPU core ACinput > ShuntIC POL VRD * Full bridge + Sync. rect. Control IC HA16163, R2A20121 1.8 V1.2 V1 V ShuntRegIC POL MemoryChipsetCPU core > Primary SW150 to 200 VSecondary SR > * *PFC: Powerfactorcorrection Circuit 30 to 40 V > *SR: Synchronousrectifier 1-12 > 2009. RenesasTechnology Corp., All rights reserved.RenesasPower MOS FETs, IGBTs, Triacsand ThyristorsGeneral Presentation size="-3">

Win High Efficiency forNote PC Power SupplyNew Generation PowerMOSFET RJK0305DPB Low RDS(on)=10mHigh Speed Switching(tf=3.0 ns)Low Gate Charge (Qg=8nC) PWMIC (Powermanagementcontrol) PWMIC >

10th Generation Power MOS FETs(V > DSS = 30 V) > 1-14 2009. RenesasTechnology Corp., All rights reserved.RenesasPower MOS FETs, IGBTs, Triacsand ThyristorsGeneral Presentation size="-3">

Lower charge lossTotal gate chargeQg(nC) 20 > Higherefficiency 12 > DS (on) (V > GS = 4.5 V) typ. (m ) Lower conduction loss > 1-15 2009. RenesasTechnology Corp., All rights reserved.RenesasPower MOS FETs, IGBTs, Triacsand ThyristorsGeneral Presentation size="-4">

Features of 10th Gen. Power MOS FETs 30 Cut in R > DS (on) > Ultra low R DS (on)Comparison with9th generation Lower Ron: lower voltagefor a given current Lower loss leads to less heatgeneration from the package. LFPAKWPAKSOP-8 1.6 m typ.1.5 m typ.2.6 m Larger currentsare possible. typ. Low on statepower loss efficiencyHigh > Low driverpower loss Low switchingpower loss 27 Cut in Qg > Higher frequency andfaster responsecharacteristics forpower supplies 30 Cut in Qgd > Low Qg Low Qgd Making possible smaller and thinner in size 1-16 2009. RenesasTechnology Corp., All rights reserved.RenesasPower...

SOP-8, WPAK (AL ribbon)LFPAK (Au Bump) > Lead(source, gate)AubumpHeat sink(drain)DieAgpaste > AL ribbon 1-17 2009. RenesasTechnology Corp., All rights reserved.RenesasPower MOS FETs, IGBTs, Triacsand ThyristorsGeneral Presentation size="-2">

2009. RenesasTechnology Corp., All rights reserved.RenesasPower MOS FETs, IGBTs, Triacsand ThyristorsGeneral Presentation size="-4">

1-22 > 2009. RenesasTechnology Corp., All rights reserved.RenesasPower MOS FETs, IGBTs, Triacsand ThyristorsGeneral Presentation size="-1">

The waveforms in are those when thehigh-side switching device turned on. > Vg (H) Vds(L) > Vgs(L) Vg (H)Vgs(L)Vds(L) 80 ns/div 80 ns/div > 2009. RenesasTechnology Corp., All rights reserved.RenesasPower MOS FETs, IGBTs, Triacsand ThyristorsGeneral Presentation size="-2">