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Renesas Electronics
Renesas Memory General Presentation

Renesas Memory General Presentation

Product catalog summary

Introduction
This document provides an overview of Renesas Technology Corp.'s memory products, focusing on SRAM and EEPROM. It serves as a reference for customers selecting appropriate products, with disclaimers on accuracy and usage limitations, especially in military and life-critical applications.

Renesas Low Power SRAM

Applications: Used in devices like TVs, wireless devices, car stereos, and more, serving as work memory, main memory for small systems, and backup memory.
Advantages: Offers stable supply, long-term support, a full lineup for various applications, low standby current, and high reliability.
Specifications: Densities range from 256 Kbits to 64 Mbits, with supply voltages of 5 V and 3 V. Packages include SOP, TSOP, sTSOP, μTSOP, and FBGA.

Product Roadmap
The roadmap details the production status of various SRAM densities from 2008 to 2014, indicating stable mass production and technological advancements.

Specific Product Features

M5M5256D Series: Fast access time, low current dissipation, suitable for 3.3-V systems.
M5M51008D, M5M5V108D Series: Wide voltage range operation, fast access time, rich package lineup.
M5M5V208A, M5M5V216A Series: Fast access time, low current dissipation, small package options.
Middle Density Series (4 Mbits, 8 Mbits): Supports 5 V, rich package lineup, stable production.

Environmental Considerations
Renesas has transitioned to lead-free parts, emphasizing environmental responsibility.

Overview
The document details specifications and features of Renesas's Low Power SRAM and Fast SRAM products, focusing on advanced LPSRAM technology and various package configurations.

Specifications
Specifications for different SRAM products include operating voltage (2.7 to 3.6 V), access times (as low as 45 ns), and current dissipation (standby current as low as 0.5 μA). It highlights the use of a 0.13-μm CMOS process and on-chip ECC for high reliability.

Product Families
SRAM products are categorized into series based on density and package type, such as the R1LV1616H Series (16 Mbits) and R1WV3216R Series (32 Mbits). Multi Chip Packages (MCP) and advanced LPSRAM with reduced cell sizes are also mentioned.

Advanced Technology
Advanced LPSRAM technology features TFT and DRAM capacitor technology to reduce cell size and improve reliability. The document discusses the benefits of a 0.15-μm CMOS process for smaller chip sizes and enhanced reliability.

Package Configurations
Various package types are described, including TSOP, μTSOP, and FBGA, with details on pin configurations and compatibility. Flexibility in switching between ×8 and ×16 configurations using the BYTE# pin is highlighted.

Fast SRAM
Fast SRAM products, including Synchronous SRAM and QDR II/DDR II SRAM, are covered with specifications on supply voltage, operating frequency, and data transfer types. Features like power-down mode and boundary scan enhance functionality.

Conclusion
Renesas Technology Corp. aims to expand its SRAM business by offering a wide range of high-performance, low-power SRAM products with advanced technology and flexible packaging options.

Catalog excerpts

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Stable supply and long tern supportBusiness strategy > 5 V, 3 VSupply Voltage Density256 Kbits, 1 Mbit, 2 Mbits, 4 Mbits, 8 Mbits, 16 Mbits, 32 Mbits, 64 Mbits PackageSOP, TSOP, sTSOP, TSOP, FBGA (CSP) > 0.05 A (256 Kbits), 0.1 A (1 Mbit), 0.5 A (4 Mbits), 0.5 A (16 Mbits)Standby current Wide temp.-40 to +85 C Up to 85 C are individually corresponding > 0.13 m 16 Mbits: low soft error by on-chip ECCHigh reliability Advanced LPSRAMNew type memory cell which merged SRAM and DRAM capacity > Switchover for au parts completed in 2005, mass production in preparationLead free1-3 > 2009. RenesasTechnology...

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Low typical standby current under 0.05 A (256 Kbits) > Long term production over 22 years (256 Kbits) Will continue keeping production stable > sTSOP DensityTypeVoltagePackageAccess time > M5M5V208A,M5M5V216A Series3.3 VTSOP, sTSOP55 ns/70 ns 1-5 2009. RenesasTechnology Corp., All rights reserved.RenesasLow Power SRAM size="-4">

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DensityPart No.Supply voltageAccess timeActive supplycurrent StandbycurrentPower downsupply current (Vcc= 3.0 V)OperatingtemperaturePackage 70 ns > Wide Version: 3.0 to 3.6 V and 4.5 to 5.5 V25 mAmax. (Vcc= 3.6 V)G-Ver.XG-Ver. G-Ver.XG-Ver. > /70 ns 50 mAmax. (Vcc= 5.5 V) SOP-28 pins, TSOP-28 pins (sTSOPsize)10 > A max.LL-Ver.XL-Ver. LL-Ver.XL-Ver. 5-V Version: 4.5 to 5.5 V 0 to +70 2.4 A max > 2009. RenesasTechnology Corp., All rights reserved.RenesasLow Power SRAM size="-2">

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Active: 20 mAtyp./25 mAmax. @f = 10 MHz > 55/70 ns2.7 to 3.6 V -40 to +85 Standby: 0.3 A typ./30 A max. > 32-pin sTSOP, 0.5-mm pitch (8.0 > A max.25 mAmax. (f = 10 MHz)M5M5V208AKV-55HIM5M5V208AKV-70HIDensityAccess timeSupply voltage Package A max.60 mAmax. (f = 10 MHz)M5M5V216ATP-55HIM5M5V216ATP-70HI 13.4 mm) for 8 devices > Power down supplycurrent (Vcc= 2.0 V)Standby currentActive supply current Part No. A max.30 A max.30 Operating temperature C sTSOP-32 pins24 TSOP-44 pins24 1-8 > 2009. RenesasTechnology Corp., All rights reserved.RenesasLow Power SRAM size="-3">

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More Market Movement! 5 V Support Rich Package Lineup > TSOP Will continue keeping production stable > Density TypeVoltagePackageAccesstime 4 Mbits > R1LP0408C, R1LV0408D,R1LV0416D, R1LV0414D Series5 V, 3.3 VSOP, TSOP,sTSOP, FBGA55/70 ns M5M5W816, M5M5W8173.3 V TSOP, TSOP,FBGA55/70 ns 8 Mbits > HM628100, HM6216514,HM62V8100 Series5.5 V, 3.3 VTSOP55 ns 1-9 2009. RenesasTechnology Corp., All rights reserved.RenesasLow Power SRAM size="-5">

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Adoption of the 0.18- m CMOS process and 6 MOS Memory CellsLow current dissipation: Standby0.5 TSOP, A typ./10 A max. for SL-Ver.(Ta = 25 0.4-mm pitch (10.49 10.79 mm) C)Small Package lineup: 52-pin 8 MbitsDensity2.7 to 3.6 V4.5 to 5.5 VSupply voltage25 mAmax.30 mAmax.35 mAmax.50 mAmax. (f = 10 MHz)Operating current10 8512 Kbits 161 Mbit 81 Mbit 512 Kbits 161 Mbit 8/512 Kbits 16 HM628100I > *1 HM6216514IPart No.M5M5W816WGM5M5W817KT > *1 M5M5W816TPHM62V8100I > *2 A max.(SL Ver.)10 A max.(SL Ver.)40 A max.Standby current 10 A max. (3 V)(SL Ver.)10 A max.(3 V) (SL Ver.)30 A max.(2.0 V)Data retention...

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3.3 VTSOP, TSOP, FBGA(55 ns) > * / 70 nsNew type Memory Cell > 3.3 V TSOP, FBGA70 ns New type Memory Cell > TSOP, TSOP55 ns/ 70 nsNew type Memory Cell > 3.3 VTSOP, TSOP, FBGA55 ns/ 70 nsNew type Memory Cell3.3 V > 2009. RenesasTechnology Corp., All rights reserved.RenesasLow Power SRAM size="-1">

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Advanced low-power SRAM (LPSRAM) is fully compatible with conventional SRAM and has been developed as Renesas proprietary technology, achieving both even greater reliability and reduced cell areas. > Advanced LPSRAMcan reduce formemory cell sizedrastically!! Reduce Cell size : (1) StackLoad Tr > (2)Scaling down of Drive Tr. ) 2 m Technology : (1) TFT Technology (3) DRAMCapacitor ConventionalSRAM > High Reliability : Latch Up Free Soft Error Free > Cell size ( Cylindrical Capacitor 1 cell unit (1)(3)(3)(2) > 0.11.0100.60.250.150.130.110.09 Thin Film Transistor 0.15- m advanced LPSRAMmatches the...

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UnderDevelopment 8/2 Mbits 16) > *1 64 Mbits(8 Mbits 8/4 Mbits 16) > *1 32 Mbitssingle-chip type 32 Mbits+ 32 Mbitsstacked MCP type Supply voltage [VCC]2.7 V to 3.6 V C45 mAtyp. @ 3.0 V, 25 CData retention current4 A typ. @ 3.0 V, 25 C8 A typ. @ 3.0 V, 25 C Density32 Mbits(4 Mbits RӔ: 0 to 70 C, IӔ: -40 to 85 COperating temperature Part No.R1LV3216RSA/RSDR1WV6416RSA/RSD/RBGAccess time55/70 ns55/70 nsOperating current40 mAtyp. @ 3.0 V, 25 TUOP,48-TSOP (I), 48-FBGA) Package1. Shipment as chips or wafers2. Compact packages: 52- TSOP3. Packaging facility: 48-TSOP (I)MCP(52- > 32-Mbits Advanced 32-Mbits...

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8 mode or 16 mode.In case of Remark: BYTE# pin controls 8 mode or 16 mode.In case of 8 mode (BYTE = 'L'), pin 47 is an address pin (A-1). (32 Mbits)A20 8 mode (BYTE = 'L'), pin 45 is an address pin (A-1).Remark: BYTE# pin controls > 2009. RenesasTechnology Corp., All rights reserved.RenesasLow Power SRAM size="-1">

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