Renesas Memory General Presentation
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2009. RenesasTechnology Corp., All rights reserved. >

Stable supply and long tern supportBusiness strategy > 5 V, 3 VSupply Voltage Density256 Kbits, 1 Mbit, 2 Mbits, 4 Mbits, 8 Mbits, 16 Mbits, 32 Mbits, 64 Mbits PackageSOP, TSOP, sTSOP, TSOP, FBGA (CSP) > 0.05 A (256 Kbits), 0.1 A (1 Mbit), 0.5 A (4 Mbits), 0.5 A (16 Mbits)Standby current Wide temp.-40 to +85 C Up to 85 C are individually corresponding > 0.13 m 16 Mbits: low soft error by on-chip ECCHigh reliability Advanced LPSRAMNew type memory cell which merged SRAM and DRAM capacity > Switchover for au parts completed in 2005, mass production in preparationLead free1-3 > 2009....

Low typical standby current under 0.05 A (256 Kbits) > Long term production over 22 years (256 Kbits) Will continue keeping production stable > sTSOP DensityTypeVoltagePackageAccess time > M5M5V208A,M5M5V216A Series3.3 VTSOP, sTSOP55 ns/70 ns 1-5 2009. RenesasTechnology Corp., All rights reserved.RenesasLow Power SRAM size="-4">

DensityPart No.Supply voltageAccess timeActive supplycurrent StandbycurrentPower downsupply current (Vcc= 3.0 V)OperatingtemperaturePackage 70 ns > Wide Version: 3.0 to 3.6 V and 4.5 to 5.5 V25 mAmax. (Vcc= 3.6 V)G-Ver.XG-Ver. G-Ver.XG-Ver. > /70 ns 50 mAmax. (Vcc= 5.5 V) SOP-28 pins, TSOP-28 pins (sTSOPsize)10 > A max.LL-Ver.XL-Ver. LL-Ver.XL-Ver. 5-V Version: 4.5 to 5.5 V 0 to +70 2.4 A max > 2009. RenesasTechnology Corp., All rights reserved.RenesasLow Power SRAM size="-2">

Active: 20 mAtyp./25 mAmax. @f = 10 MHz > 55/70 ns2.7 to 3.6 V -40 to +85 Standby: 0.3 A typ./30 A max. > 32-pin sTSOP, 0.5-mm pitch (8.0 > A max.25 mAmax. (f = 10 MHz)M5M5V208AKV-55HIM5M5V208AKV-70HIDensityAccess timeSupply voltage Package A max.60 mAmax. (f = 10 MHz)M5M5V216ATP-55HIM5M5V216ATP-70HI 13.4 mm) for 8 devices > Power down supplycurrent (Vcc= 2.0 V)Standby currentActive supply current Part No. A max.30 A max.30 Operating temperature C sTSOP-32 pins24 TSOP-44 pins24 1-8 > 2009. RenesasTechnology Corp., All rights reserved.RenesasLow Power SRAM size="-3">

More Market Movement! 5 V Support Rich Package Lineup > TSOP Will continue keeping production stable > Density TypeVoltagePackageAccesstime 4 Mbits > R1LP0408C, R1LV0408D,R1LV0416D, R1LV0414D Series5 V, 3.3 VSOP, TSOP,sTSOP, FBGA55/70 ns M5M5W816, M5M5W8173.3 V TSOP, TSOP,FBGA55/70 ns 8 Mbits > HM628100, HM6216514,HM62V8100 Series5.5 V, 3.3 VTSOP55 ns 1-9 2009. RenesasTechnology Corp., All rights reserved.RenesasLow Power SRAM size="-5">

Adoption of the 0.18- m CMOS process and 6 MOS Memory CellsLow current dissipation: Standby0.5 TSOP, A typ./10 A max. for SL-Ver.(Ta = 25 0.4-mm pitch (10.49 10.79 mm) C)Small Package lineup: 52-pin 8 MbitsDensity2.7 to 3.6 V4.5 to 5.5 VSupply voltage25 mAmax.30 mAmax.35 mAmax.50 mAmax. (f = 10 MHz)Operating current10 8512 Kbits 161 Mbit 81 Mbit 512 Kbits 161 Mbit 8/512 Kbits 16 HM628100I > *1 HM6216514IPart No.M5M5W816WGM5M5W817KT > *1 M5M5W816TPHM62V8100I > *2 A max.(SL Ver.)10 A max.(SL Ver.)40 A max.Standby current 10 A max. (3 V)(SL Ver.)10 A max.(3 V) (SL Ver.)30 A max.(2.0 V)Data...

3.3 VTSOP, TSOP, FBGA(55 ns) > * / 70 nsNew type Memory Cell > 3.3 V TSOP, FBGA70 ns New type Memory Cell > TSOP, TSOP55 ns/ 70 nsNew type Memory Cell > 3.3 VTSOP, TSOP, FBGA55 ns/ 70 nsNew type Memory Cell3.3 V > 2009. RenesasTechnology Corp., All rights reserved.RenesasLow Power SRAM size="-1">

Advanced low-power SRAM (LPSRAM) is fully compatible with conventional SRAM and has been developed as Renesas proprietary technology, achieving both even greater reliability and reduced cell areas. > Advanced LPSRAMcan reduce formemory cell sizedrastically!! Reduce Cell size : (1) StackLoad Tr > (2)Scaling down of Drive Tr. ) 2 m Technology : (1) TFT Technology (3) DRAMCapacitor ConventionalSRAM > High Reliability : Latch Up Free Soft Error Free > Cell size ( Cylindrical Capacitor 1 cell unit (1)(3)(3)(2) > 0.11.0100.60.250.150.130.110.09 Thin Film Transistor 0.15- m advanced LPSRAMmatches...

UnderDevelopment 8/2 Mbits 16) > *1 64 Mbits(8 Mbits 8/4 Mbits 16) > *1 32 Mbitssingle-chip type 32 Mbits+ 32 Mbitsstacked MCP type Supply voltage [VCC]2.7 V to 3.6 V C45 mAtyp. @ 3.0 V, 25 CData retention current4 A typ. @ 3.0 V, 25 C8 A typ. @ 3.0 V, 25 C Density32 Mbits(4 Mbits RӔ: 0 to 70 C, IӔ: -40 to 85 COperating temperature Part No.R1LV3216RSA/RSDR1WV6416RSA/RSD/RBGAccess time55/70 ns55/70 nsOperating current40 mAtyp. @ 3.0 V, 25 TUOP,48-TSOP (I), 48-FBGA) Package1. Shipment as chips or wafers2. Compact packages: 52- TSOP3. Packaging facility: 48-TSOP (I)MCP(52- > 32-Mbits Advanced...

2009. RenesasTechnology Corp., All rights reserved.RenesasLow Power SRAM >

Remark: BYTE# pin controls 8 mode or 16 mode.In case of 8 mode (BYTE = 'L'), pin 45 is an address pin (A-1). 2009. RenesasTechnology Corp., All rights reserved.RenesasLow Power SRAM size="-2">

Vcc DQ > H GND A16 DQ > L GND LowPower SRAM 2LowPower SRAM 1 DQ > H DQ > H A14 A15 DQ > L DQ > L 2009. RenesasTechnology Corp., All rights reserved.RenesasLow Power SRAM >

8 mode or 16 mode.In case of Remark: BYTE# pin controls 8 mode or 16 mode.In case of 8 mode (BYTE = 'L'), pin 47 is an address pin (A-1). (32 Mbits)A20 8 mode (BYTE = 'L'), pin 45 is an address pin (A-1).Remark: BYTE# pin controls > 2009. RenesasTechnology Corp., All rights reserved.RenesasLow Power SRAM size="-1">

ҩ2009. RenesasTechnology Corp., All rights reserved.RenesasLow Power SRAM >

2009. RenesasTechnology Corp., All rights reserved. ɩ2009. RenesasTechnology Corp., All rights reserved.RenesasLow Power SRAM >

2009. RenesasTechnology Corp., All rights reserved.RenesasFast SRAM >

2009. RenesasTechnology Corp., All rights reserved.RenesasFast SRAM >

2009. RenesasTechnology Corp., All rights reserved.RenesasFast SRAM >

2009. RenesasTechnology Corp., All rights reserved.RenesasFast SRAM >