General-Purpose Memory General Catalog Renesas Electronics

Low power Static Random Access Memory Fast Static Random Access Memory Electrically Erasable and Programmable Read Only Memory Highly reliable SRAM / EEPROM Today every type of information source is becoming networked and more sophisticated, and memory is expected to play an increasingly advanced role. Renesas Electronics supplies high-speed memory products for industrial applications; consumer systems such as office equipment communications devices, and automobiles; information systems; and next-generation applications such as smart grids. General-purpose memory products are suitable for use...

Low-Power Static Random Access memory A comprehensive lineup to meet a variety of needs Low-Power SRAM Basic product evolution with The full product lineup has been developed with upward-compatibility in mind, allowing use in a wide range of applications from industrial equipment to portable terminals. □ Package compatibility and miniaturization SOP, TSOP, sTSOP, uTSOP, FBGA Realization of high reliability Renesas original technology maintains the high quality of a large density product. □ Advanced Low Power SRAM New memory cell composed by a fusion of SRAM and DRAM capacitor Pursuit of higher...

RENESAS LOW POWER SRAM Low-Power SRAM Lineup □ Long production and market record □ Stable production to be continued • TSOP sTSOP □ Stable production to be continued ■ SOR TSOP sTSOP FBGA ■ TSOP uTSOP FBGA □ New memory cell Advanced Low Power SRAM Mass production . TSOP FBGA ►►►16Mb Advanced ►►►32Mb Advanced ►►► 64Mb Advanced . uTSOR FBGA, TSOP *Please contact a Renesas Electronic sales representative for details . uTSOR TSOP • uTSOP, FBGA, TSOP Low-Power SRAM Package Lineup □ Rich lineup from SOP to FBGA QuTSOP (II) is also the JEDEC standard package. TSOP(I) & sTSOP(l)

Low-Power Static Random Access memory Low-Power SRAM Manufactured using 0.13mm CMOS process. Uses 6-transistor memory cells. ECC* for reduced soft errors. «ECC : E™, checking and cc,™ □ Wide operating voltage range 2.7V to 3.6V Product Status Product Specifications Rapid increase in soft errors caused by neutron Difficult to maintain data storage integrity Innate susceptibility to bit faults due to soft errors Hardening against soft errors bv incorporating ECC Quick Facts About It goes without saying that semiconductor memory must be fault free. In fact, however, memory can sometimes malfunction,...

RENESAS LOW POWER SRAM Low-Power SRAM A new memory cell design combining SRAM cells and DRAM capacitors. Cell area is greatly reduced and soft errors are virtually eliminated. Features/Advantages for User Advantages of advanced low-power SRAM 3 Smaller chips (about half the cell size of full CMOS) in smaller packages Q Capacitor cells for dramatically improved resistance to soft errors Reduced Cell size □ 64 Mb products employ 32 Mb + 32 Mb stacked MCP * technology for the large density in the industry * MCP : Multi Chip Package T , An Main Applications Q Wide range of applications including...

Fast Static Random Access Memory Fast static random access memory meets the need for higher system speed and performance Fast SRAM Product Evolution Memory for Communications Applications □ Full lineup: 18M/36M/72M QDR-II/DDR-II 600Mbps □ Even faster (1.067Gbps) QDR-II+/DDR-II+ (36M/72M density) added to product lineup. Memory for General Industrial Applications *QDR: Quad Data Rate *QDR and Quad Data Rate include a new family of products developed by Cypress, IDT, Samsung, and Rer QDR™-II/DDR-II Series and QDR™-II+/DDR-II+ Series Features and Lineup Output occurs at a double data rate (DDR)...

FAST STATIC RANDOM ACCESS MEMORY Low-latency DRAM (LLDRAM) output occurs at a double data rate (DDR), making this type of memory suitable for use in packet buffers requiring large data transfer bandwidth. LLDRAM features varied latency of 8 cycles, shorter than that of conventional DDR SRAM, and is suitable for random-access operation. World-class data transfer speeds separate I/O (SIO) versions available. Limited function of IEEE 1149.1 Network SRAM \_ High speed, high data rate, and large density for broadband applications Q Double late write/pipeline read operation enabling 100% data bus utilization...

MONOS memory cells provide reliability unsurpassed by our competitors. Highly Reliable Memory *1 : MONOS : Metal Oxide Nitride Oxide Silicon Memory Cells Providing Robust Data Reliability The memory cell works by storing a charge in a nitride layer sandwiched between two oxide layers. Since the charge is stored in a large trap enclosed by layers of insulation, charge leakage is minimal and the data is retained even if a defect should form in the tunnel oxide layer. Renesas is the only manufacturer*2 to employ a MONOS configuration for EEPROM and has been producing such memory products for more...

Shipping Preprogrammed Renesas can program EEPROM with data provided by the customer before shipment.* Programming EEPROM can be a troublesome process. In-House Programming Outsourcing Programing time Memory Density Lineup Visible defects such as bent leads. Renesas sales representative regarding delivery conditio] A range of memory densities is available. Package Options Shipment formats ranging from general-purpose packages to wafers. 'Please contact a sales representative for details.

Highly reliable SRAM/EEPROM We draw on many years of experience supplying SRAM to industrial customers as we continue to extend our lineup of products for automotive applications. We can promise our customers stable supply over the long term, and our highly reliable and large-density products will always be at the cutting edge. Operating voltage Range of large-density products Package compatibility and 5V/3V dual power supply support O TSOP Wide operating temperature range Superior reliability Special arrangements required for New type of memory cell combining support over 85°C. SRAM and DRAM...