*mydirectindustry

Catalogs
Renesas Electronics
Insulated-Gate Bipolar Transistor (IGBT) Pocket Guide

Insulated-Gate Bipolar Transistor (IGBT) Pocket Guide

Product catalog summary

Overview: This document is a technical guide for Insulated-Gate Bipolar Transistors (IGBT) from Renesas Electronics, covering various series such as D-Series, CD-Series, CV-Series, and others. It provides specifications, performance characteristics, and application guidance for these semiconductor devices.

Specifications: The guide includes detailed specifications for different IGBT models, including parameters like collector-emitter voltage (VCES), collector current (IC), saturation voltage (VCEsat), turn-off time (tf), short-circuit time (tsc), and energy loss during turn-off (Eoff). These specifications are crucial for selecting the appropriate IGBT for specific applications.

Performance Characteristics: The document highlights key performance metrics such as low conduction loss, high efficiency, and low turn-off loss. Graphs and tables illustrate the relationship between short-circuit time and saturation voltage, as well as the efficiency of current generation IGBT devices.

Applications: IGBT devices are categorized by application and voltage, including induction heating, inverter small motor control, big motor control, and power supply units. The document specifies which IGBT series are suitable for each application, based on voltage requirements ranging from 600V to 1350V.

Key Data from Tables: The tables provide a comprehensive list of IGBT part numbers along with their electrical characteristics and package types. This information is essential for engineers to compare and select the right IGBT for their design needs.

Conclusion: The guide serves as a valuable resource for engineers and designers working with IGBT technology, offering detailed specifications and application guidance to optimize performance in various electronic applications.

Catalog excerpts

Insulated-Gate Bipolar Transistor (IGBT) Pocket Guide-1

IGBT Technology F-Series iBF-Series i DF-Series ^pMi Low conduction loss tsc vs. Vce(sat) for IGBT application optimized characteristics Before purchasing or using any Renesas Electronics products listed herein, please refer to the latest product manual and/or data sheet in advance. Paper from responsible sources © 2013 Renesas Electronics Europe All rights reserved. Printed in Germany. Renesas Electronics Europe Insulated-Gate Bipolar Transistor (IGBT) Pocket Guide Renesas Electronics

Open the catalog to page 1

Insulated-Gate Bipolar Transistor (IGBT) Pocket Guide-2

IGBT Devices (2/2) IGBT IGBT Classes by Applications Application/ Voltage Induction Heating Small Motor Control Power Supply Unit

Open the catalog to page 2

All Renesas Electronics catalogs and technical brochures

Archived catalogs

*Prices are pre-tax. They exclude delivery charges and customs duties and do not include additional charges for installation or activation options. Prices are indicative only and may vary by country, with changes to the cost of raw materials and exchange rates.

Brand list