Catalog excerpts
SiCube SiCube Furnace for silicon carbide crystal growth Semiconductor Systems
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Main equipment - reactor module - loading equipment - vacuum equipment - water distribution system - gas cabinet - control cabinet Area required approx. 2,000 x 2,500 x 3,725 mm Application The HTCVT / HTCVD system has been especially designed as hot wall apparatus for Silicon Carbide (SiC) crystal growth by sublimation / thermal decomposition (pyrolysis) of source gases at high temperatures. By high vacuum capability ultra clean surfaces with regard to both water and oxygen can be achieved prior to the start of process. The system design allows the use of substrates (seeds) up to 4"...
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