Sputtering targets for high quality CIGS CuGa, CuIn, CuInGa

Product catalog summary

Overview: The document discusses the advantages of using sputtering for the absorber precursor layer in CIGS thin film solar cells, highlighting benefits such as homogeneity, process stability, and material utilization. It focuses on the use of CuGa, CuIn, and CuInGa sputtering targets, which are available in various compositions.

Specifications:

Composition Flexibility: PLANSEE offers a variety of compositions for CuGa, CuIn, and CuInGa targets, tailored to specific CIGS processes. The compositions include Cu: 70-90%, In: 10-30% for CuIn; Cu: 60-90%, Ga: 10-40% for CuGa; and Cu: >30%, In: >60%, Ga: <30% for CuInGa.
Physical Data: For Cu75Ga25 at 25°C, the density is 8.65 g/cm³, hardness is 200-230 HV10, grain size is less than 100 µm, thermal conductivity is over 45 W/m·K, and electrical conductivity is over 7.0 MS/m.

Quality and Performance:

High Density and Purity: Targets have a density greater than 99%, ensuring maximum electrical and thermal conductivity, stable sputtering processes, and high deposition rates. The high purity (4N5 metallic purity) minimizes impurities, reducing thin film defects and enhancing electrical properties.
Optimal Microstructure: A homogeneous and fine-grained microstructure prevents poor sputtering behavior and ensures stable composition throughout the target's lifetime.

Manufacturing and Technology:

Smooth Surface: The chemical and microstructural homogeneity results in a smooth target surface, achieved through powder metallurgy, which prevents phase segregation and extensive grain growth.
Available Sizes: Targets are available in planar and rotary geometries, with typical dimensions for single target segments being 300 x 260 x 15 mm³ for planar and Ø 165/135 x 200 mm³ for rotary.

Contact Information: For further details, PLANSEE SE can be contacted at [email protected] or through their website www.plansee.com.

Catalog excerpts

Sputtering targets for high quality CIGS CuGa, CuIn, CuInGa-1

Sputtering targets for high quality CIGS CuGa, CuIn, CuInGa Sputtering of the absorber precursor layer of CIGS thin film solar cells offers advantages in terms of homogeneity, process stability and material utilization. CuGa, CuIn and CuInGa sputtering targets are available in various compositions. An optimal sputtering behavior is achieved by a homogenous and fine-grained microstructure. Composition flexibility We provide sputtering targets accor- ding to your specific CIGS process. A great variety of CuGa, CuIn and CuInGa target composition is possible through PLANSEE’s powder-metallurgical manufacturing process. Physical Data (Cu75Ga25 wt.%) at 25 °C Density Grain size Electrical conductivity Hardness Thermal conductivity Thermal expansion

Open the catalog to page 1

Sputtering targets for high quality CIGS CuGa, CuIn, CuInGa-2

Optimal microstructure Target inhomogeneities can lead to poor sputtering behavior and inhomogeneous sputtering rates. A homogeneous and fine-grained microstructure ensures optimal sputtering and stable typical microstructure for Cu75Ga25 target material composition during the full target lifetime. High density and purity A maximum electrical and thermal Purity (4N5 metallic purity) in µg/g conductivity is achieved by a target density of > 99 %. Your advantage: A stable sputtering process and high deposition rates. The high purity of our sputtering tar- gets contribute to an optimal performance...

Open the catalog to page 2

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