Sputtering targets for high quality CIGS CuGa, CuIn, CuInGa
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Sputtering targets for high quality CIGS CuGa, CuIn, CuInGa Sputtering of the absorber precursor layer of CIGS thin film solar cells offers advantages in terms of homogeneity, process stability and material utilization. CuGa, CuIn and CuInGa sputtering targets are available in various compositions. An optimal sputtering behavior is achieved by a homogenous and fine-grained microstructure. Composition flexibility We provide sputtering targets accor- ding to your specific CIGS process. A great variety of CuGa, CuIn and CuInGa target composition is possible through PLANSEE’s powder-metallurgical manufacturing process. Physical Data (Cu75Ga25 wt.%) at 25 °C Density Grain size Electrical conductivity Hardness Thermal conductivity Thermal expansion

Optimal microstructure Target inhomogeneities can lead to poor sputtering behavior and inhomogeneous sputtering rates. A homogeneous and fine-grained microstructure ensures optimal sputtering and stable typical microstructure for Cu75Ga25 target material composition during the full target lifetime. High density and purity A maximum electrical and thermal Purity (4N5 metallic purity) in µg/g conductivity is achieved by a target density of > 99 %. Your advantage: A stable sputtering process and high deposition rates. The high purity of our sputtering tar- gets contribute to an optimal...