Infrared Diode Laser at 808nm
Features: The infrared diode laser offers a round beam profile, long lifetime, low owning cost, and ease of use.
Applications: It is suitable for research, measurement, optical instruments, and spectrum analysis.
Specifications:- Wavelength: 808±3 nm
- Output Power: Options of 200, 300, and 500 mW
- Energy Distribution: Even
- Beam Profile: Round
- Power Stability: Less than 1%, 3%, or 5% over 4 hours
- Warm-up Time: Less than 5 minutes
- Beam Divergence: Full angle less than 8.0 or 18.0 mrad
- Beam Diameter at Aperture: Approximately 2.0 mm
- Beam Height from Base Plate: 24.8 mm
- Operating Temperature: 10 to 35°C
- Power Supply: 90-264VAC or 5VDC, models PSU-III-FDA and PSU-III-LED
- Modulation (Optional): TTL or analog, ranges from 1Hz to 30kHz
- Expected Lifetime: 10,000 hours
- Warranty: 1 year
Dimensions and Weight:- MxL-III-980R: 139(L)×73(W)×46.2(H) mm, 0.6 kg
- PSU-III-LED: 154(L)×155(W)×95(H) mm, 1.5 kg
- PSU-III-FDA: 133(L)×130(W)×65(H) mm, 1.2 kg
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