Catalog excerpts
(P/N: XSJ-10-G6-38) Introduction This high data rate 25Gbps photodiode chip is GaAs top- illuminated PIN structure. Features is high responsibility, low capacitance, low dark current, active area size is Φ38μm, anode and cathode bond pad on top for TO-CAN package wire-bond, application in fiber channel data transmission, 25Gigabit Ethernet and Multi-mode communication etc. Low capacitance and low dark current. High responsibility. Excellent reliability: All chips have passed the qualification requirements as specified by Telcordia -GR-468-CORE. 25Gbps AOC (Active Optical Cable) receiver at 850nm. 25Gbps VCSEL based parallel optical interconnects. Email: sales@xinsijie.com.cn
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Tel: +86 755-23712706 Email: sales@xinsijie.com.cn Web: www.xinsijie.com.cn D00001021 Rev A
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25Gbps Φ38μm GaAs PIN PD Chip Dimensions Active Area Anode Bond Pad Cathode Bond Pad Email: sales@xinsijie.com.cn
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25Gbps Φ38μm GaAs PIN PD Chip 1 X N Array Description Electrically separated channels Electrically separated channels Take necessary ESD protective measures, avoid to prevent electrostatic damage the chip. The chip are easily fragile and damaged, should be very carefully used when handling. Do not handle with tweezers, recommended by vacuum adsorption. Bonding force, temperature should be carefully setting, in order to avoid damage to the chip. Email: sales@xinsijie.com.cn
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