XSJ-10-G6-38/25Gbps Φ38μm GaAs PIN PD Chip/PHOGRAIN

Product catalog summary

Introduction
This document details a 25Gbps GaAs PIN photodiode chip with a top-illuminated structure. It features high responsivity, low capacitance, and low dark current, with an active area size of Φ38μm. The chip is designed for TO-CAN package wire-bonding and is suitable for applications in fiber channel data transmission, 25Gigabit Ethernet, and multi-mode communication.

Features

Φ38μm active area.
Low capacitance and dark current.
High responsivity.
Data rate up to 25Gbps.
Excellent reliability, meeting Telcordia-GR-468-CORE standards.
100% testing and inspection.

Applications

25Gigabit Ethernet/Fiber channel.
25Gbps AOC receiver at 850nm.
25Gbps VCSEL based parallel optical interconnects.
25Gbps SFP+.
4X25Gbps QSFP.

Electro-Optical Characteristics
Operating at a temperature of 22±3℃, the chip has a spectral range of 840-860 nm. Key parameters include:

Dark Current 1: 0.03-0.3 nA at VR=2.0V.
Dark Current 2: 1.0 nA at VR=20V.
Responsivity: 0.5-0.52 A/W at λ=850nm, VR=2.0V.
Bandwidth: 20 GHz at λ=850nm@-3dB, RL=50Ω, VR=2.0V.
Capacitance: 0.11-0.16 pF at f=1MHz, VR=2.0V.

Absolute Maximum Ratings

Forward Current: Max 10 mA.
Storage Temperature: -55 to 125 ℃.
Operating Temperature: -40 to 85 ℃.
Soldering Process Temperature: 320℃ for 60s.

Dimensions

Active Area: Φ38 μm.
Anode and Cathode Bond Pad: Φ80 μm each.
Die Length: 240-260 μm.
Die Width: 240-260 μm.
Die Height: 140-160 μm.

1 X N Array
Two configurations are available:

1X4 Array: 250μm Die pitch, dimensions 1050μm X 250μm, thickness 150μm.
1X12 Array: 250μm Die pitch, dimensions 3050μm X 250μm, thickness 150μm.

Cautions

Implement ESD protective measures to prevent electrostatic damage.
Handle the chip carefully to avoid damage.
Use vacuum adsorption instead of tweezers for handling.
Set bonding force and temperature carefully to avoid chip damage.

Catalog excerpts

XSJ-10-G6-38/25Gbps Φ38μm GaAs PIN PD Chip/PHOGRAIN-1

(P/N: XSJ-10-G6-38) Introduction This high data rate 25Gbps photodiode chip is GaAs top- illuminated PIN structure. Features is high responsibility, low capacitance, low dark current, active area size is Φ38μm, anode and cathode bond pad on top for TO-CAN package wire-bond, application in fiber channel data transmission, 25Gigabit Ethernet and Multi-mode communication etc. Low capacitance and low dark current. High responsibility. Excellent reliability: All chips have passed the qualification requirements as specified by Telcordia -GR-468-CORE. 25Gbps AOC (Active Optical Cable) receiver at 850nm. 25Gbps VCSEL based parallel optical interconnects. Email: [email protected]

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XSJ-10-G6-38/25Gbps Φ38μm GaAs PIN PD Chip/PHOGRAIN-2

Tel: +86 755-23712706 Email: [email protected] Web: www.xinsijie.com.cn D00001021 Rev A

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XSJ-10-G6-38/25Gbps Φ38μm GaAs PIN PD Chip/PHOGRAIN-3

25Gbps Φ38μm GaAs PIN PD Chip Dimensions Active Area Anode Bond Pad Cathode Bond Pad Email: [email protected]

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XSJ-10-G6-38/25Gbps Φ38μm GaAs PIN PD Chip/PHOGRAIN-4

25Gbps Φ38μm GaAs PIN PD Chip 1 X N Array Description Electrically separated channels Electrically separated channels Take necessary ESD protective measures, avoid to prevent electrostatic damage the chip. The chip are easily fragile and damaged, should be very carefully used when handling. Do not handle with tweezers, recommended by vacuum adsorption. Bonding force, temperature should be carefully setting, in order to avoid damage to the chip. Email: [email protected]

Open the catalog to page 4