Catalog excerpts
(P/N: XSJ-10-G5-70) Introduction This high data rate 10Gbps photodiode chip is GaAs top- illuminated PIN structure. Features is high responsibility, low capacitance, low dark current, active area size is Φ70μm, anode and cathode bond pad on top for TO-CAN package wire-bond, application in fiber channel data transmission, 10Gigabit Ethernet and Multi-mode communication etc. Low capacitance and low dark current. High responsibility. Excellent reliability: All chips have passed the qualification requirements as specified by Telcordia -GR-468-CORE. 10Gbps short range data communication at 850nm. Multi-mode datacom and telecom. 8Gbps Fiber Channel data transmission. Fiber-optic transceivers receivers and transponders. Email: sales@xinsijie.com.cn
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Tel: +86 755-23712706 Email: sales@xinsijie.com.cn Web: www.xinsijie.com.cn D00000724 Rev D
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10Gbps Φ70μm GaAs PIN PD Chip Dimensions Active Area Anode Bond Pad Cathode Bond Pad Email: sales@xinsijie.com.cn
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10Gbps Φ70μm GaAs PIN PD Chip 1 X N Array Description Electrically separated channels Electrically separated channels Take necessary ESD protective measures, avoid to prevent electrostatic damage the chip. The chip are easily fragile and damaged, should be very carefully used when handling. Do not handle with tweezers, recommended by vacuum adsorption. Bonding force, temperature should be carefully setting, in order to avoid damage to the chip. Email: sales@xinsijie.com.cn
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