Catalog excerpts
100Gbps Φ20μm 750μm Pitch 4X25G Array Digital PIN PD Chip (P/N: XSJ-10-D6A-20-K4-750) Introduction This 4X25Gbps Array 100Gbps photodiode chip, which is top-illuminated and mesa structure high data rate digital PIN photodiode chip, active area size is Φ20μm. Its features is high, low capacitance, low dark current and excellent reliability, mainly combination with high performance 4X25Gbps quad channel transimpedance amplifiers(TIA), application in long wavelength applications, high date rate up to 4X25Gbps with single mode fiber optical receiver. Ground-Signal-Ground (GSG) bond pad structure, 4X25G array. Low dark current, low capacitance, high responsibility. Excellent reliability: All chips have passed the qualification requirements as specified by Telcordia -GR-468-CORE. IEEE 100 Gigabit Ethernet Single mode datacom and telecom Fiber-optic transceivers, receiver and transponders Email: sales@xinsijie.com.cn
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lOOGbps (P20pm 750pm Pitch 4X25G Array Digital PIN PD Chip Tel: +86 755-23712706 Email: sales@xinsijie.com.cn Web: www.xinsijie.com.cn D00000887 Rev C
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lOOGbps (P20pm 750pm Pitch 4X25G Array Digital PIN PD Chip 1. Take necessary ESD protective measures, avoid to prevent electrostatic damage the chip. 2. InP-based chip are easily fragile and damaged, should be very carefully used when handling. 3. Do not handle with tweezers, recommended by vacuum adsorption. 4. Bonding force, temperature should be carefully setting, in order to avoid damage to the chip. Tel: +86 755-23712706 Email: sales@xinsijie.com.cn Web: www.xinsijie.com.cn D00000887 Rev C
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