XSJ-10-D6A-20-K4-750/100Gbps Φ20μm 750μm Pitch 4X25G Array Digital PIN PD Chip/PHOGRAIN

Product catalog summary

Introduction
This document describes a 4X25Gbps Array 100Gbps photodiode chip, featuring a top-illuminated mesa structure with a 20μm active area. It is designed for high data rate applications, offering low capacitance, low dark current, and excellent reliability. It is typically used with high-performance 4X25Gbps quad channel transimpedance amplifiers (TIA) for long wavelength applications and single mode fiber optical receivers.

Features

20μm active area.
Ground-Signal-Ground (GSG) bond pad structure, 4X25G array.
Low dark current and capacitance, high responsivity.
Data rate of ≥ 25Gbps per channel.
Die pitch of 750μm.
Excellent reliability, meeting Telcordia-GR-468-CORE standards.
100% testing and inspection.

Applications

IEEE 100 Gigabit Ethernet.
100G CWDM4, PSM4, CLR4.
100G (4X25Gbps) links.
Single mode datacom and telecom.
Fiber-optic transceivers, receivers, and transponders.

Electro-Optical Characteristics
Operating at a temperature of 22±3℃, the chip has the following characteristics:

Response Spectrum: 1260-1620 nm.
Dark Current: 0.05-3.0 nA at VR=5.0V.
Reverse Breakdown Voltage: 30V at IR=10μA.
Responsivity: 0.7 A/W at λ=1310nm, Pin=0.5mW, VR=1.0V.
Bandwidth: 22 GHz at λ=1550nm@-3dB, RL=50Ω, Pin=0.5mW, VR=2.0V.
Capacitance: 0.08-0.1 pF at f=1MHz, VR=5.0V.

Absolute Maximum Ratings

Reverse Voltage: Max 10V.
Forward Current: Max 10mA.
Reverse Current: Max 5mA.
Optical Power Input: Max 10mW.
Storage Temperature: -45 to 125℃.
Operating Temperature: -40 to 85℃.

Dimensions

Active Area: 20μm.
Signal Bond Pad: 80μm.
Ground Bond Pad: 80X80μm.
Die Length: 2720-2740μm.
Die Width: 390-410μm.
Die Height: 140-160μm.
Die Pitch: 750μm.

Cautions

Implement ESD protective measures to prevent electrostatic damage.
Handle InP-based chips carefully to avoid damage.
Use vacuum adsorption instead of tweezers for handling.
Set bonding force and temperature carefully to avoid chip damage.

Catalog excerpts

XSJ-10-D6A-20-K4-750/100Gbps Φ20μm 750μm Pitch 4X25G Array Digital PIN PD Chip/PHOGRAIN-1

100Gbps Φ20μm 750μm Pitch 4X25G Array Digital PIN PD Chip (P/N: XSJ-10-D6A-20-K4-750) Introduction This 4X25Gbps Array 100Gbps photodiode chip, which is top-illuminated and mesa structure high data rate digital PIN photodiode chip, active area size is Φ20μm. Its features is high, low capacitance, low dark current and excellent reliability, mainly combination with high performance 4X25Gbps quad channel transimpedance amplifiers(TIA), application in long wavelength applications, high date rate up to 4X25Gbps with single mode fiber optical receiver. Ground-Signal-Ground (GSG) bond pad structure, 4X25G array. Low dark current, low capacitance, high responsibility. Excellent reliability: All chips have passed the qualification requirements as specified by Telcordia -GR-468-CORE. IEEE 100 Gigabit Ethernet Single mode datacom and telecom Fiber-optic transceivers, receiver and transponders Email: [email protected]

Open the catalog to page 1

XSJ-10-D6A-20-K4-750/100Gbps Φ20μm 750μm Pitch 4X25G Array Digital PIN PD Chip/PHOGRAIN-2

lOOGbps (P20pm 750pm Pitch 4X25G Array Digital PIN PD Chip Tel: +86 755-23712706 Email: [email protected] Web: www.xinsijie.com.cn D00000887 Rev C

Open the catalog to page 2

XSJ-10-D6A-20-K4-750/100Gbps Φ20μm 750μm Pitch 4X25G Array Digital PIN PD Chip/PHOGRAIN-3

lOOGbps (P20pm 750pm Pitch 4X25G Array Digital PIN PD Chip 1. Take necessary ESD protective measures, avoid to prevent electrostatic damage the chip. 2. InP-based chip are easily fragile and damaged, should be very carefully used when handling. 3. Do not handle with tweezers, recommended by vacuum adsorption. 4. Bonding force, temperature should be carefully setting, in order to avoid damage to the chip. Tel: +86 755-23712706 Email: [email protected] Web: www.xinsijie.com.cn D00000887 Rev C

Open the catalog to page 3