XSJ-10-D6-20/25Gbps Φ20μm Top-illuminated PIN PD Chip/PHOGRAIN

Product catalog summary

Introduction
This document details a 25Gbps top-illuminated PIN photodiode chip with a mesa structure and an active area size of Φ20μm. It is designed for high data rate applications, offering high responsivity, low capacitance, low dark current, and excellent reliability. It is primarily used with high-performance 25Gbps transimpedance amplifiers for long-wavelength applications and single-mode fiber optical receivers.

Features

Φ20μm active area.
Ground-Signal-Ground (GSG) bond pad structure on top.
Low dark current, low capacitance, high responsivity.
Data rate up to 25Gbps.
Excellent reliability, meeting Telcordia-GR-468-CORE standards.
100% testing and inspection.

Applications

100 Gigabit Ethernet.
20GHz analog links.
High-speed test and measurement.

Electro-Optical Characteristics
At a temperature of 22±3℃, the photodiode exhibits the following characteristics:

Response Spectrum: 1260-1620 nm.
Dark Current: 0.08-3.0 nA at VR=5.0V.
Reverse Breakdown Voltage: 20 V at IR=10μA.
Responsivity: 0.7 A/W at λ=1310nm, Pin=0.5mW, VR=1.0V.
Bandwidth: 22 GHz at λ=1550nm@-3dB, RL=50Ω, Pin=0.5mW, VR=2.0V.
Capacitance: 0.08-0.11 pF at f=1MHz, VR=2.0V.

Absolute Maximum Ratings

Reverse Voltage: Max 20 V.
Forward Current: Max 10 mA.
Reverse Current: Max 5 mA.
Optical Power Input: Max 10 mW.
Storage Temperature: -45 to 125 ℃.
Operating Temperature: -40 to 85 ℃.

Dimensions

Active Area: Φ20 μm.
Signal Bond Pad: Φ80 μm.
Ground Bond Pad (Both): 80X80 μm.
Die Length: 390-410 μm.
Die Width: 290-310 μm.
Die Height: 140-160 μm.

Cautions

Implement ESD protective measures to prevent electrostatic damage.
Handle InP-based chips carefully to avoid damage.
Use vacuum adsorption instead of tweezers for handling.
Set bonding force and temperature carefully to avoid chip damage.

Catalog excerpts

XSJ-10-D6-20/25Gbps Φ20μm Top-illuminated PIN PD Chip/PHOGRAIN-1

(P/N: XSJ-10-D6-20) Introduction This 25Gbps photodiode chip, which is top-illuminated and mesa structure high data rate PIN photodiode chip, active area size is Φ20μm. Its features have high responsivity, low capacitance, low dark current and excellent reliability, mainly combination with high performance 25Gbps transimpedance amplifiers(TIA), applications in long wavelength applications, high date rate up to 25Gbps with single mode fiber optical receiver. Ground-Signal-Ground (GSG) bond pad structure on top. Low dark current, low capacitance, high responsibility. Excellent reliability: All chips have passed the qualification requirements as specified by Telcordia -GR-468-CORE. High speed test and measurement Email: [email protected]

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XSJ-10-D6-20/25Gbps Φ20μm Top-illuminated PIN PD Chip/PHOGRAIN-2

Tel: +86 755-23712706 Email: [email protected] Web: www.xinsijie.com.cn D00000667 Rev F

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XSJ-10-D6-20/25Gbps Φ20μm Top-illuminated PIN PD Chip/PHOGRAIN-3

1. Take necessary ESD protective measures, avoid to prevent electrostatic damage the chip. 2. InP-based chip are easily fragile and damaged, should be very carefully used when handling. 3. Do not handle with tweezers, recommended by vacuum adsorption. 4. Bonding force, temperature should be carefully setting, in order to avoid damage to the chip. Tel: +86 755-23712706 Email: [email protected] Web: www.xinsijie.com.cn D00000667 Rev F

Open the catalog to page 3