Catalog excerpts
(P/N: XSJ-10-D6-20) Introduction This 25Gbps photodiode chip, which is top-illuminated and mesa structure high data rate PIN photodiode chip, active area size is Φ20μm. Its features have high responsivity, low capacitance, low dark current and excellent reliability, mainly combination with high performance 25Gbps transimpedance amplifiers(TIA), applications in long wavelength applications, high date rate up to 25Gbps with single mode fiber optical receiver. Ground-Signal-Ground (GSG) bond pad structure on top. Low dark current, low capacitance, high responsibility. Excellent reliability: All chips have passed the qualification requirements as specified by Telcordia -GR-468-CORE. High speed test and measurement Email: sales@xinsijie.com.cn
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Tel: +86 755-23712706 Email: sales@xinsijie.com.cn Web: www.xinsijie.com.cn D00000667 Rev F
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1. Take necessary ESD protective measures, avoid to prevent electrostatic damage the chip. 2. InP-based chip are easily fragile and damaged, should be very carefully used when handling. 3. Do not handle with tweezers, recommended by vacuum adsorption. 4. Bonding force, temperature should be carefully setting, in order to avoid damage to the chip. Tel: +86 755-23712706 Email: sales@xinsijie.com.cn Web: www.xinsijie.com.cn D00000667 Rev F
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