XSJ-10-D5A-32-K4/40Gbps Φ32μm 250μm Pitch 4X14G Array Digital PIN PD Chip/PHOGRAIN
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XSJ-10-D5A-32-K4/40Gbps Φ32μm 250μm Pitch 4X14G Array Digital PIN PD Chip/PHOGRAIN - 1

Introduction This 4X14Gbps Array 40Gbps photodiode chip, which is top-illuminated and mesa structure high data rate PIN photodiode chip, active area size is 032pm. Its features are high responsivity, low capacitance, low dark current and excellent reliability, mainly combination with high performance 4X14Gbps quad channel transimpedance amplifiers(TIA),applications in long wavelength applications, high date rate up to 4X14Gbps with single mode fiber optical receiver. Features 2. Ground-Signal-Ground (GSG) bond pad structure, 4X14G array. 3. Low dark current, low capacitance, high responsibility. 6. Excellent reliability: All chips have passed the qualification requirements as specified by Telcordia -GR-468-CORE. 3. Parallel optical interconnection Tel: +86 755-23712706 Email: sales@xinsijie.com.cn Web: www.xinsijie.com.cn D00000658 Rev C

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XSJ-10-D5A-32-K4/40Gbps Φ32μm 250μm Pitch 4X14G Array Digital PIN PD Chip/PHOGRAIN - 2

Tel: +86 755-23712706 Email: sales@xinsijie.com.cn Web: www.xinsijie.com.cn D00000658 Rev C

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XSJ-10-D5A-32-K4/40Gbps Φ32μm 250μm Pitch 4X14G Array Digital PIN PD Chip/PHOGRAIN - 3

1. Take necessary ESD protective measures, avoid to prevent electrostatic damage the chip. 2. InP-based chip are easily fragile and damaged, should be very carefully used when handling. 3. Do not handle with tweezers, recommended by vacuum adsorption. 4. Bonding force, temperature should be carefully setting, in order to avoid damage to the chip. Tel: +86 755-23712706 Email: sales@xinsijie.com.cn Web: www.xinsijie.com.cn D00000658 Rev C

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