XSJ-10-D5A-32-K4/40Gbps Φ32μm 250μm Pitch 4X14G Array Digital PIN PD Chip/PHOGRAIN

Product catalog summary

Introduction
This document describes a 4X14Gbps Array 40Gbps photodiode chip, featuring a top-illuminated mesa structure with a 32μm active area. It is designed for high data rate applications, offering high responsivity, low capacitance, low dark current, and excellent reliability. It is typically used with high-performance 4X14Gbps quad channel transimpedance amplifiers (TIA) for long wavelength applications and single-mode fiber optical receivers.

Features

32μm active area.
Ground-Signal-Ground (GSG) bond pad structure, 4X14G array.
Low dark current, low capacitance, high responsivity.
Data rate: ≥14Gbps/channel.
Die pitch: 250μm.
Excellent reliability, meeting Telcordia-GR-468-CORE standards.
100% testing and inspection.

Applications

4X14Gbps CWDM CFP
40Gbps SPFP+ LR4
Parallel optical interconnection

Electro-Optical Characteristics
Measured at a temperature of 22±3℃, the key parameters include:

Response Spectrum: 1260-1620 nm
Dark Current: 0.05-2.0 nA at VR=5.0V
Reverse Breakdown Voltage: 30 V at IR=10μA
Responsivity: 0.85-1.08 A/W at λ=1310/1550nm
Bandwidth: 12-14 GHz at λ=1550nm
Capacitance: 0.13-0.2 pF at f=1MHz

Absolute Maximum Ratings

Reverse Voltage: Max 20 V
Forward Current: Max 10 mA
Reverse Current: Max 5 mA
Optical Power Input: Max 10 mW
Storage Humidity: Max 85% RH
Storage Temperature: -45 to 125 ℃
Operating Temperature: -40 to 85 ℃
Soldering Temperature: 320℃ for 60 sec
Process Temperature: 185℃ for 2 hours

Dimensions

Active Area: 32 μm
Signal Bond Pad: 70 μm
Ground Bond Pad: 70X70 μm
Die Length: 1030-1050 μm
Die Width: 290-310 μm
Die Height: 140-160 μm
Die Pitch: 250 μm

Cautions

Implement ESD protective measures to prevent electrostatic damage.
Handle InP-based chips with care to avoid damage.
Use vacuum adsorption instead of tweezers for handling.
Carefully set bonding force and temperature to avoid chip damage.

Catalog excerpts

XSJ-10-D5A-32-K4/40Gbps Φ32μm 250μm Pitch 4X14G Array Digital PIN PD Chip/PHOGRAIN-1

Introduction This 4X14Gbps Array 40Gbps photodiode chip, which is top-illuminated and mesa structure high data rate PIN photodiode chip, active area size is 032pm. Its features are high responsivity, low capacitance, low dark current and excellent reliability, mainly combination with high performance 4X14Gbps quad channel transimpedance amplifiers(TIA),applications in long wavelength applications, high date rate up to 4X14Gbps with single mode fiber optical receiver. Features 2. Ground-Signal-Ground (GSG) bond pad structure, 4X14G array. 3. Low dark current, low capacitance, high responsibility. 6. Excellent reliability: All chips have passed the qualification requirements as specified by Telcordia -GR-468-CORE. 3. Parallel optical interconnection Tel: +86 755-23712706 Email: [email protected] Web: www.xinsijie.com.cn D00000658 Rev C

Open the catalog to page 1

XSJ-10-D5A-32-K4/40Gbps Φ32μm 250μm Pitch 4X14G Array Digital PIN PD Chip/PHOGRAIN-2

Tel: +86 755-23712706 Email: [email protected] Web: www.xinsijie.com.cn D00000658 Rev C

Open the catalog to page 2

XSJ-10-D5A-32-K4/40Gbps Φ32μm 250μm Pitch 4X14G Array Digital PIN PD Chip/PHOGRAIN-3

1. Take necessary ESD protective measures, avoid to prevent electrostatic damage the chip. 2. InP-based chip are easily fragile and damaged, should be very carefully used when handling. 3. Do not handle with tweezers, recommended by vacuum adsorption. 4. Bonding force, temperature should be carefully setting, in order to avoid damage to the chip. Tel: +86 755-23712706 Email: [email protected] Web: www.xinsijie.com.cn D00000658 Rev C

Open the catalog to page 3