(P/N: XSJ-10-D5-70) Introduction This high data rate 8Gbps photodiode chip is InGaAs/InP PIN mesa structure and top-illuminated, features is high responsibility, low capacitance, low dark current, active area size is Φ70μm, anode and cathode bond pad on top for TO-CAN package wire-bonding. Application in 8Gbps and below data rate optical receiver module, Gigabit Ethernet and ATM etc. field. Low capacitance and low dark current. High responsibility. Mesa structure. Anode and cathode bond pad on top. Excellent reliability: All chips have passed the qualification requirements as specified by Telcordia -GR-468-CORE. 8Gbps and below data rate digital receiver. SR/LR optical network. Gigabit Ethernet. ATM (Asynchronous Transfer Mode). Email: [email protected]

Tel: +86 755-23712706 Email: [email protected] Web: www.xinsijie.com.cn D00000910 RevC

1. Take necessary ESD protective measures, avoid to prevent electrostatic damage the chip. 2. InP-based chip are easily fragile and damaged, should be very carefully used when handling. 3. Do not handle with tweezers, recommended by vacuum adsorption. 4. Bonding force, temperature should be carefully setting, in order to avoid damage to the chip. Tel: +86 755-23712706 Email: [email protected] Web: www.xinsijie.com.cn D00000910 RevC