XSJ-10-D5-70/8Gbps Φ70μm Digital PIN PD Chip/PHOGRAIN

Product catalog summary

Introduction
This document details the specifications and applications of an 8Gbps photodiode chip with a Φ70μm active area. The chip features a high responsibility, low capacitance, and low dark current, making it suitable for optical receiver modules, Gigabit Ethernet, and ATM applications.

Features

Φ70μm active area.
Low capacitance and dark current.
High responsibility.
Mesa structure.
Data rate up to 8Gbps.
Anode and cathode bond pads on top.
Reliability tested per Telcordia-GR-468-CORE.
100% testing and inspection.

Applications

8Gbps and below data rate digital receivers.
SR/LR optical networks.
Gigabit Ethernet.
4G Fiber Channel.
SONET/SDH OC-48.
ATM.

Electro-Optical Characteristics
At a temperature of 22±3℃, the chip exhibits the following characteristics:

Response Spectrum: 910-1650 nm.
Dark Current: 0.3-3.0 nA at VR=5.0V.
Reverse Breakdown Voltage: 30 V at IR=10μA.
Responsivity: 0.95-1.12 A/W at λ=1310/1550nm.
Bandwidth: 6.0-8.0 GHz at λ=1550nm.
Capacitance: 0.25-0.45 pF at f=1MHz.

Absolute Maximum Ratings

Reverse Voltage: Max 20 V.
Forward Current: Max 10 mA.
Reverse Current: Max 5 mA.
Optical Power Input: Max 10 mW.
Storage Temperature: -45 to 125℃.
Operating Temperature: -40 to 85℃.

Dimensions

Active Area: Φ70 μm.
Anode Bond Pad: Φ70 μm.
Cathode Bond Pad: 80X80 μm.
Die Length: 240-260 μm.
Die Width: 240-260 μm.
Die Height: 110-130 μm.

Cautions

Implement ESD protective measures to prevent electrostatic damage.
Handle InP-based chips carefully to avoid damage.
Use vacuum adsorption instead of tweezers for handling.
Set bonding force and temperature carefully to avoid chip damage.

Catalog excerpts

XSJ-10-D5-70/8Gbps Φ70μm Digital PIN PD Chip/PHOGRAIN-1

(P/N: XSJ-10-D5-70) Introduction This high data rate 8Gbps photodiode chip is InGaAs/InP PIN mesa structure and top-illuminated, features is high responsibility, low capacitance, low dark current, active area size is Φ70μm, anode and cathode bond pad on top for TO-CAN package wire-bonding. Application in 8Gbps and below data rate optical receiver module, Gigabit Ethernet and ATM etc. field. Low capacitance and low dark current. High responsibility. Mesa structure. Anode and cathode bond pad on top. Excellent reliability: All chips have passed the qualification requirements as specified by Telcordia -GR-468-CORE. 8Gbps and below data rate digital receiver. SR/LR optical network. Gigabit Ethernet. ATM (Asynchronous Transfer Mode). Email: [email protected]

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XSJ-10-D5-70/8Gbps Φ70μm Digital PIN PD Chip/PHOGRAIN-2

Tel: +86 755-23712706 Email: [email protected] Web: www.xinsijie.com.cn D00000910 RevC

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XSJ-10-D5-70/8Gbps Φ70μm Digital PIN PD Chip/PHOGRAIN-3

1. Take necessary ESD protective measures, avoid to prevent electrostatic damage the chip. 2. InP-based chip are easily fragile and damaged, should be very carefully used when handling. 3. Do not handle with tweezers, recommended by vacuum adsorption. 4. Bonding force, temperature should be carefully setting, in order to avoid damage to the chip. Tel: +86 755-23712706 Email: [email protected] Web: www.xinsijie.com.cn D00000910 RevC

Open the catalog to page 3