XSJ-10-D5-60/10Gbps Φ60μm Digital PIN PD Chip/PHOGRAIN

Product catalog summary

Introduction
This document details a high data rate 10Gbps photodiode chip with an InGaAs/InP PIN structure, designed for top-illumination. It is characterized by high responsibility, low capacitance, and low dark current, with an active area size of Φ60μm. The chip is suitable for TO-CAN package wire-bonding and is used in 10Gbps receivers.

Features

Φ60μm active area.
Low capacitance and dark current.
High responsibility.
Anode and cathode bond pad on top.
Compact design.
Reliability confirmed by Telcordia-GR-468-CORE standards.
Data rate capability up to 10Gbps.
100% testing and inspection.

Applications

8G Fiber Channel.
10G Ethernet.
10GBASE-LRM.
SONET/SDH OC-192.
ATM, CATV.

Electro-Optical Characteristics
Measured at a temperature of 22±3℃, the key parameters include:

Response Spectrum: 910-1650 nm.
Dark Current: 0.1-3 nA at VR=5.0V.
Reverse Breakdown Voltage: 30 V at IR=10μA.
Responsivity: 0.95-1.12 A/W at specified wavelengths and conditions.
Bandwidth: 9 GHz at λ=1550nm.
Capacitance: 0.21-0.25 pF at f=1MHz, VR=2.0V.

Absolute Maximum Ratings

Reverse Voltage: Max 20 V.
Forward Current: Max 10 mA.
Reverse Current: Max 5 mA.
Optical Power Input: Max 10 mW.
Storage Temperature: -45 to 125 ℃.
Operating Temperature: -40 to 85 ℃.

Dimensions

Active Area: Φ60 μm.
Anode Bond Pad: Φ70 μm.
Cathode Bond Pad: 70x61.15 μm.
Die Length: 240-260 μm.
Die Width: 240-260 μm.
Die Height: 110-130 μm.

Cautions

Implement ESD protective measures to prevent electrostatic damage.
Handle InP-based chips with care due to their fragility.
Avoid using tweezers; vacuum adsorption is recommended.
Carefully set bonding force and temperature to avoid chip damage.

Catalog excerpts

XSJ-10-D5-60/10Gbps Φ60μm Digital PIN PD Chip/PHOGRAIN-1

(P/N: XSJ-10-D5-60) Introduction This high data rate 10Gbps photodiode chip is InGaAs/InP PIN structure and top-illuminated. Features is high responsibility, low capacitance, low dark current, active area size is Φ60μm, anode and cathode bond pad on top for TO-CAN package wire-bonding. Application in 10Gbps receiver. Low capacitance and low dark current. High responsibility. Anode and cathode bond pad on top. Small size design. Excellent reliability: All chips have passed the qualification requirements as specified by Telcordia -GR-468-CORE. Email: [email protected]

Open the catalog to page 1

XSJ-10-D5-60/10Gbps Φ60μm Digital PIN PD Chip/PHOGRAIN-2

Tel: +86 755-23712706 Email: [email protected] Web: www.xinsijie.com.cn D00000871 Rev E

Open the catalog to page 2

XSJ-10-D5-60/10Gbps Φ60μm Digital PIN PD Chip/PHOGRAIN-3

1. Take necessary ESD protective measures, avoid to prevent electrostatic damage the chip. 2. InP-based chip are easily fragile and damaged, should be very carefully used when handling. 3. Do not handle with tweezers, recommended by vacuum adsorption. 4. Bonding force, temperature should be carefully setting, in order to avoid damage to the chip. Tel: +86 755-23712706 Email: [email protected] Web: www.xinsijie.com.cn D00000871 Rev E

Open the catalog to page 3