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XSJ-10-D5-50-SPI/10Gbps Φ50μm PIN PD Chip/PHOGRAIN

XSJ-10-D5-50-SPI/10Gbps Φ50μm PIN PD Chip/PHOGRAIN
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XSJ-10-D5-50-SPI/10Gbps Φ50μm PIN PD Chip/PHOGRAIN - 1

(P/N: XSJ-10-D5-50-SPI) Introduction This high data rate 10Gbps photodiode chip is InGaAs/InP PIN structure and top-illuminated. Features is high responsibility, low capacitance, low dark current, active area size is Φ50μm, anode and cathode bond pad on top for TO-CAN package wire-bonding. Application in 10Gbps receiver. High responsibility. Excellent reliability: All chips have passed the qualification requirements as specified by Telcordia -GR-468-CORE. Long-haul optical networks. Fiber-optic Datacom. Email: sales@xinsijie.com.cn

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XSJ-10-D5-50-SPI/10Gbps Φ50μm PIN PD Chip/PHOGRAIN - 2

Tel: +86 755-23712706 Email: sales@xinsijie.com.cn Web: www.xinsijie.com.cn D00000445 Rev J

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XSJ-10-D5-50-SPI/10Gbps Φ50μm PIN PD Chip/PHOGRAIN - 3

1. Take necessary ESD protective measures, avoid to prevent electrostatic damage the chip. 2. InP-based chip are easily fragile and damaged, should be very carefully used when handling. 3. Do not handle with tweezers, recommended by vacuum adsorption. 4. Bonding force, temperature should be carefully setting, in order to avoid damage to the chip. Tel: +86 755-23712706 Email: sales@xinsijie.com.cn Web: www.xinsijie.com.cn D00000445 Rev J

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