XSJ-10-D5-50-SPI/10Gbps Φ50μm PIN PD Chip/PHOGRAIN

Product catalog summary

Introduction
This document details the specifications and features of a high data rate 10Gbps photodiode chip with an InGaAs/InP PIN structure, designed for top-illumination. It is suitable for use in 10Gbps receivers.

Features

Active area size of Φ50μm.
Low capacitance and dark current.
High responsivity.
Excellent reliability, meeting Telcordia-GR-468-CORE standards.
Data rate capability up to 10Gbps.
100% testing and inspection.

Applications

Long-haul optical networks.
10G Ethernet.
Fiber-optic Datacom.
WDM, ATM.

Electro-Optical Characteristics
Measured at a temperature of 22±3℃, the key parameters include:

Response Spectrum: 910-1650 nm.
Dark Current: 0.05-3 nA at VR=5.0V.
Reverse Breakdown Voltage: Minimum 30V at IR=10μA.
Responsivity: 0.95-1.08 A/W at specified conditions.
Bandwidth: 10 GHz at λ=1550nm.
Capacitance: 0.18-0.25 pF at f=1MHz, VR=2.0V.

Absolute Maximum Ratings

Reverse Voltage: Max 20V.
Forward Current: Max 10 mA.
Reverse Current: Max 5 mA.
Optical Power Input: Max 10 mW.
Storage Temperature: -45 to 125℃.
Operating Temperature: -40 to 85℃.

Dimensions

Active Area: Φ50 μm.
Anode and Cathode Bond Pad: Φ70 μm each.
Die Length, Width, Height: 240-260 μm, 240-260 μm, 110-130 μm respectively.

Cautions

Implement ESD protective measures to prevent electrostatic damage.
Handle InP-based chips with care due to their fragility.
Avoid using tweezers; vacuum adsorption is recommended.
Carefully set bonding force and temperature to avoid chip damage.

Catalog excerpts

XSJ-10-D5-50-SPI/10Gbps Φ50μm PIN PD Chip/PHOGRAIN-1

(P/N: XSJ-10-D5-50-SPI) Introduction This high data rate 10Gbps photodiode chip is InGaAs/InP PIN structure and top-illuminated. Features is high responsibility, low capacitance, low dark current, active area size is Φ50μm, anode and cathode bond pad on top for TO-CAN package wire-bonding. Application in 10Gbps receiver. High responsibility. Excellent reliability: All chips have passed the qualification requirements as specified by Telcordia -GR-468-CORE. Long-haul optical networks. Fiber-optic Datacom. Email: [email protected]

Open the catalog to page 1

XSJ-10-D5-50-SPI/10Gbps Φ50μm PIN PD Chip/PHOGRAIN-2

Tel: +86 755-23712706 Email: [email protected] Web: www.xinsijie.com.cn D00000445 Rev J

Open the catalog to page 2

XSJ-10-D5-50-SPI/10Gbps Φ50μm PIN PD Chip/PHOGRAIN-3

1. Take necessary ESD protective measures, avoid to prevent electrostatic damage the chip. 2. InP-based chip are easily fragile and damaged, should be very carefully used when handling. 3. Do not handle with tweezers, recommended by vacuum adsorption. 4. Bonding force, temperature should be carefully setting, in order to avoid damage to the chip. Tel: +86 755-23712706 Email: [email protected] Web: www.xinsijie.com.cn D00000445 Rev J

Open the catalog to page 3