XSJ-10-D5-45-S/10Gbps Φ45μm Digital PIN PD Chip/PHOGRAIN

Product catalog summary

Introduction
This document details a high data rate 10Gbps photodiode chip with an InGaAs/InP PIN structure, designed for top illumination. It features a 45μm active area and is suitable for 10Gbps receivers.

Features

45μm active area.
Low capacitance and dark current.
High responsivity.
Ground-Signal-Ground (GSG) bond pad structure.
Compact design.
Reliability confirmed by Telcordia-GR-468-CORE standards.
Data rate capability up to 10Gbps.
100% testing and inspection.

Applications

8G Fiber Channel.
10Gigabit Ethernet.
SONET/SDH OC-192.

Electro-Optical Characteristics
Operating at 22±3℃, the chip has a response spectrum of 910-1650 nm, dark current of 0.05-0.5 nA at VR=5.0V, and a reverse breakdown voltage of 30V. Responsivity is 0.95-1.08 A/W depending on wavelength, with a bandwidth of 9.0-10.5 GHz.

Absolute Maximum Ratings

Reverse Voltage: 20V
Forward Current: 10mA
Reverse Current: 5mA
Optical Power Input: 10mW
Storage Temperature: -45 to 125℃
Operating Temperature: -40 to 85℃
Storage Humidity: up to 85% r.h.
Soldering Process Temperature: 320℃ for 60s
Process Temperature: 150℃ for 24h

Dimensions

Active Area: 45μm
Signal Bond Pad: 80μm
Ground Bond Pad: 75μm
Die Length/Width: 240-260μm
Die Height: 110-130μm

Cautions

Implement ESD protective measures to prevent electrostatic damage.
Handle InP-based chips with care due to fragility.
Avoid using tweezers; vacuum adsorption is recommended.
Carefully set bonding force and temperature to avoid chip damage.

Catalog excerpts

XSJ-10-D5-45-S/10Gbps Φ45μm Digital PIN PD Chip/PHOGRAIN-1

(P/N: XSJ-10-D5-45-S) Introduction This high data rate 10Gbps photodiode chip is InGaAs/InP PIN structure and top-illuminated. Features are high responsibility, low capacitance and low dark current; Active area size is Φ45μm, and Ground-Signal-Ground (GSG) bond pad design on top for TO-CAN package wire-bonding. Application in 10Gbps receiver. Low capacitance and low dark current. High responsibility. Ground-Signal-Ground (GSG) bond pad structure. Small size design. Excellent reliability: All chips have passed the qualification requirements as specified by Telcordia -GR-468-CORE. Email: [email protected]

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XSJ-10-D5-45-S/10Gbps Φ45μm Digital PIN PD Chip/PHOGRAIN-2

Tel: +86 755-23712706 Email: [email protected] Web: www.xinsijie.com.cn D00000720 Rev C

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XSJ-10-D5-45-S/10Gbps Φ45μm Digital PIN PD Chip/PHOGRAIN-3

1. Take necessary ESD protective measures, avoid to prevent electrostatic damage the chip. 2. InP-based chip are easily fragile and damaged, should be very carefully used when handling. 3. Do not handle with tweezers, recommended by vacuum adsorption. 4. Bonding force, temperature should be carefully setting, in order to avoid damage to the chip. Tel: +86 755-23712706 Email: [email protected] Web: www.xinsijie.com.cn D00000720 Rev C

Open the catalog to page 3