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XSJ-10-D5-45-S/10Gbps Φ45μm Digital PIN PD Chip/PHOGRAIN

XSJ-10-D5-45-S/10Gbps Φ45μm Digital PIN PD Chip/PHOGRAIN
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Catalog excerpts

XSJ-10-D5-45-S/10Gbps Φ45μm Digital PIN PD Chip/PHOGRAIN - 1

(P/N: XSJ-10-D5-45-S) Introduction This high data rate 10Gbps photodiode chip is InGaAs/InP PIN structure and top-illuminated. Features are high responsibility, low capacitance and low dark current; Active area size is Φ45μm, and Ground-Signal-Ground (GSG) bond pad design on top for TO-CAN package wire-bonding. Application in 10Gbps receiver. Low capacitance and low dark current. High responsibility. Ground-Signal-Ground (GSG) bond pad structure. Small size design. Excellent reliability: All chips have passed the qualification requirements as specified by Telcordia -GR-468-CORE. Email: sales@xinsijie.com.cn

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XSJ-10-D5-45-S/10Gbps Φ45μm Digital PIN PD Chip/PHOGRAIN - 2

Tel: +86 755-23712706 Email: sales@xinsijie.com.cn Web: www.xinsijie.com.cn D00000720 Rev C

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XSJ-10-D5-45-S/10Gbps Φ45μm Digital PIN PD Chip/PHOGRAIN - 3

1. Take necessary ESD protective measures, avoid to prevent electrostatic damage the chip. 2. InP-based chip are easily fragile and damaged, should be very carefully used when handling. 3. Do not handle with tweezers, recommended by vacuum adsorption. 4. Bonding force, temperature should be carefully setting, in order to avoid damage to the chip. Tel: +86 755-23712706 Email: sales@xinsijie.com.cn Web: www.xinsijie.com.cn D00000720 Rev C

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