XSJ-10-D5-45/10Gbps Φ45μm Digital PIN PD Chip/PHOGRAIN

Product catalog summary

Introduction
This document details the specifications and features of a 10Gbps photodiode chip with an InGaAs/InP PIN structure, designed for high-speed data applications. The chip is top-illuminated and features a Ground-Signal-Ground (GSG) bond pad design suitable for TO-CAN package wire-bonding.

Features

Active area of Φ45μm.
Low capacitance and dark current.
High responsivity.
GSG bond pad structure.
Reliability confirmed by Telcordia-GR-468-CORE standards.
Data rate capability up to 10Gbps.
100% testing and inspection.

Applications

8G Fiber Channel.
10Gigabit Ethernet.
SONET/SDH OC-192.

Electro-Optical Characteristics
Operating at a temperature of 22±3℃, the chip exhibits the following characteristics:

Response Spectrum: 910-1650 nm.
Dark Current: 0.05-0.5 nA at VR=5.0V.
Reverse Breakdown Voltage: 30 V at IR=10μA.
Responsivity: 0.95-1.08 A/W at specified conditions.
Bandwidth: 9.0-10.5 GHz.
Capacitance: 0.17-0.2 pF.

Absolute Maximum Ratings

Reverse Voltage: Max 20 V.
Forward Current: Max 10 mA.
Reverse Current: Max 5 mA.
Optical Power Input: Max 10 mW.
Storage Temperature: -45 to 125 ℃.
Operating Temperature: -40 to 85 ℃.
Storage Humidity: Max 85% r.h.
Soldering Process Temperature: Max 320℃ for 60s.
Process Temperature: Max 150℃ for 24h.

Dimensions

Active Area: Φ45 μm.
Signal Bond Pad: Φ75 μm.
Ground Bond Pad: 75x75 μm.
Die Length: 340-360 μm.
Die Width: 290-310 μm.
Die Height: 110-130 μm.

Cautions

Implement ESD protective measures to prevent electrostatic damage.
Handle InP-based chips with care due to their fragility.
Use vacuum adsorption instead of tweezers for handling.
Carefully set bonding force and temperature to avoid chip damage.

Catalog excerpts

XSJ-10-D5-45/10Gbps Φ45μm Digital PIN PD Chip/PHOGRAIN-1

(P/N: XSJ-10-D5-45) Introduction This high data rate 10Gbps photodiode chip is InGaAs/InP PIN structure and top-illuminated. Features are high responsibility, low capacitance and low dark current; Active area size is Φ45μm, and Ground-Signal-Ground (GSG) bond pad design on top for TO-CAN package wire-bonding. Application in 10Gbps receiver. Low capacitance and low dark current. High responsibility. Ground-Signal-Ground (GSG) bond pad structure. Excellent reliability: All chips have passed the qualification requirements as specified by Telcordia -GR-468-CORE. Email: [email protected]

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XSJ-10-D5-45/10Gbps Φ45μm Digital PIN PD Chip/PHOGRAIN-2

Tel: +86 755-23712706 Email: [email protected] Web: www.xinsijie.com.cn D00000612 Rev E

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XSJ-10-D5-45/10Gbps Φ45μm Digital PIN PD Chip/PHOGRAIN-3

1. Take necessary ESD protective measures, avoid to prevent electrostatic damage the chip. 2. InP-based chip are easily fragile and damaged, should be very carefully used when handling. 3. Do not handle with tweezers, recommended by vacuum adsorption. 4. Bonding force, temperature should be carefully setting, in order to avoid damage to the chip. Tel: +86 755-23712706 Email: [email protected] Web: www.xinsijie.com.cn D00000612 Rev E

Open the catalog to page 3