Catalog excerpts
(P/N: XSJ-10-D5-36) Introduction This high data rate 10Gbps photodiode chip is InGaAs/InP PIN structure and top-illuminated. Features are high responsibility, low capacitance and low dark current; Active area size is Φ36μm, and P and N bond pad design on top for TO-CAN package wire-bonding. Application in 10Gbps receiver. Low capacitance and low dark current. High responsibility. Anode and cathode bond pad on top. Excellent reliability: All chips have passed the qualification requirements as specified by Telcordia -GR-468-CORE. Email: sales@xinsijie.com.cn
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Tel: +86 755-23712706 Email: sales@xinsijie.com.cn Web: www.xinsijie.com.cn D00000442 Rev C
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1. Take necessary ESD protective measures, avoid to prevent electrostatic damage the chip. 2. InP-based chip are easily fragile and damaged, should be very carefully used when handling. 3. Do not handle with tweezers, recommended by vacuum adsorption. 4. Bonding force, temperature should be carefully setting, in order to avoid damage to the chip. Tel: +86 755-23712706 Email: sales@xinsijie.com.cn Web: www.xinsijie.com.cn D00000442 Rev C
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