XSJ-10-D5-36/10Gbps Φ36μm Digital PIN PD Chip/PHOGRAIN

Product catalog summary

Introduction
This document details the specifications and features of a 10Gbps photodiode chip with an InGaAs/InP PIN structure, designed for top-illumination. It is characterized by high responsivity, low capacitance, and low dark current, with an active area size of Φ36μm. The chip is suitable for 10Gbps receivers and features P and N bond pad design for TO-CAN package wire-bonding.

Features

Φ36μm active area.
Low capacitance and dark current.
High responsivity.
Anode and cathode bond pads on top.
Data rate capability up to 10Gbps.
Excellent reliability, meeting Telcordia-GR-468-CORE standards.
100% testing and inspection.

Applications

8G Fiber Channel.
10Gigabit Ethernet.
SONET/SDH OC-192.

Electro-Optical Characteristics
Operating at a temperature of 22±3℃, the chip has the following characteristics:

Response Spectrum: 910-1650 nm.
Dark Current: 0.05-1.0 nA at VR=5.0V.
Reverse Breakdown Voltage: 30 V at IR=10μA.
Responsivity: 0.95-1.08 A/W at λ=1310/1550nm.
Bandwidth: 10 GHz at λ=1550nm.
Capacitance: 0.14-0.17 pF at f=1MHz, VR=2.0V.

Absolute Maximum Ratings

Reverse Voltage: Max 20 V.
Forward Current: Max 10 mA.
Reverse Current: Max 5 mA.
Optical Power Input: Max 10 mW.
Storage Temperature: -45 to 125 ℃.
Operating Temperature: -40 to 85 ℃.

Dimensions

Active Area: Φ36 μm.
Anode/Cathode Bond Pad: Φ70 μm.
Die Length: 440-460 μm.
Die Width: 240-260 μm.
Die Height: 110-130 μm.

Cautions

Implement ESD protective measures to prevent electrostatic damage.
Handle InP-based chips with care to avoid damage.
Use vacuum adsorption instead of tweezers for handling.
Carefully set bonding force and temperature to avoid chip damage.

Catalog excerpts

XSJ-10-D5-36/10Gbps Φ36μm Digital PIN PD Chip/PHOGRAIN-1

(P/N: XSJ-10-D5-36) Introduction This high data rate 10Gbps photodiode chip is InGaAs/InP PIN structure and top-illuminated. Features are high responsibility, low capacitance and low dark current; Active area size is Φ36μm, and P and N bond pad design on top for TO-CAN package wire-bonding. Application in 10Gbps receiver. Low capacitance and low dark current. High responsibility. Anode and cathode bond pad on top. Excellent reliability: All chips have passed the qualification requirements as specified by Telcordia -GR-468-CORE. Email: [email protected]

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XSJ-10-D5-36/10Gbps Φ36μm Digital PIN PD Chip/PHOGRAIN-2

Tel: +86 755-23712706 Email: [email protected] Web: www.xinsijie.com.cn D00000442 Rev C

Open the catalog to page 2

XSJ-10-D5-36/10Gbps Φ36μm Digital PIN PD Chip/PHOGRAIN-3

1. Take necessary ESD protective measures, avoid to prevent electrostatic damage the chip. 2. InP-based chip are easily fragile and damaged, should be very carefully used when handling. 3. Do not handle with tweezers, recommended by vacuum adsorption. 4. Bonding force, temperature should be carefully setting, in order to avoid damage to the chip. Tel: +86 755-23712706 Email: [email protected] Web: www.xinsijie.com.cn D00000442 Rev C

Open the catalog to page 3