XSJ-10-D5-32/14Gbps Φ32μm Digital PIN PD Chip/PHOGRAIN

Product catalog summary

Introduction
This document details the specifications and features of a 14Gbps photodiode chip, specifically designed for high data rate applications. The chip is top-illuminated with an active area of Φ32μm, offering high responsivity, low capacitance, low dark current, and excellent reliability. It is optimized for use with 14Gbps transimpedance amplifiers in long-haul, single-mode fiber optical receivers.

Features

Φ32μm active area with a mesa structure and Ground-Signal-Ground (GSG) bond pad on top.
Low dark current and capacitance.
High responsivity and data rate of ≥14Gbps.
Excellent reliability, meeting Telcordia-GR-468-CORE standards.
100% testing and inspection.

Applications

14Gbps CWDM CFP.
40Gbps SPFP+ LR4.
Parallel optical interconnection.

Electro-Optical Characteristics
Operating at a temperature of 22±3℃, the chip has the following characteristics:

Response Spectrum: 1260-1620 nm.
Dark Current: 0.05-3.0 nA at VR=5.0V.
Reverse Breakdown Voltage: 30 V at IR=10μA.
Responsivity: 0.85-1.08 A/W at λ=1310/1550nm.
Bandwidth: 14 GHz at λ=1550nm.
Capacitance: 0.13-0.2 pF at f=1MHz, VR=2.0V.

Absolute Maximum Ratings

Reverse Voltage: Max 20 V.
Forward Current: Max 10 mA.
Reverse Current: Max 2 mA.
Optical Power Input: Max 10 mW.
Storage Temperature: -45 to 125 ℃.
Operating Temperature: -40 to 85 ℃.

Dimensions

Active area: Φ32 μm.
Signal Bond Pad: Φ70 μm.
Ground Bond Pad: 75X75 μm.
Die Length: 340-360 μm.
Die Width: 290-310 μm.
Die Height: 140-160 μm.

Cautions

Implement ESD protective measures to prevent electrostatic damage.
Handle InP-based chips with care to avoid damage.
Use vacuum adsorption instead of tweezers for handling.
Carefully set bonding force and temperature to avoid chip damage.

Catalog excerpts

XSJ-10-D5-32/14Gbps Φ32μm Digital PIN PD Chip/PHOGRAIN-1

(P/N: XSJ-10-D5-32) Introduction This 14Gbps photodiode chip, which is top-illuminated high data rate PIN photodiode chip, with active area is Φ32μm. Its features have high responsivity, low capacitance, low dark current and excellent reliability, mainly combination with high performance 14Gbps transimpedance amplifiers (TIA), applications in long haul applications, high date rate up to 14Gbps with single mode fiber optical receiver. Mesa structure, Ground-Signal-Ground (GSG) bond pad on top. Low dark current, low capacitance. High responsibility. Excellent reliability: All chips have passed the qualification requirements as specified by Telcordia -GR-468-CORE. Parallel optical interconnection. Email: [email protected]

Open the catalog to page 1

XSJ-10-D5-32/14Gbps Φ32μm Digital PIN PD Chip/PHOGRAIN-2

Tel: +86 755-23712706 Email: [email protected] Web: www.xinsijie.com.cn D00000909 Rev D

Open the catalog to page 2

XSJ-10-D5-32/14Gbps Φ32μm Digital PIN PD Chip/PHOGRAIN-3

1. Take necessary ESD protective measures, avoid to prevent electrostatic damage the chip. 2. InP-based chip are easily fragile and damaged, should be very carefully used when handling. 3. Do not handle with tweezers, recommended by vacuum adsorption. 4. Bonding force, temperature should be carefully setting, in order to avoid damage to the chip. Tel: +86 755-23712706 Email: [email protected] Web: www.xinsijie.com.cn D00000909 Rev D

Open the catalog to page 3