XSJ-10-D4-60/3.1Gbps Φ60μm Digital PIN PD Chip/PHOGRAIN

Product catalog summary

Introduction
This document details the specifications and features of a 3.1Gbps Φ60μm Digital PIN Photodiode (PD) Chip, model XSJ-10-D4-60. The chip is designed with an InGaAs/InP PIN planar structure and is top-illuminated. It is characterized by low dark current, low capacitance, high responsivity, and excellent reliability, suitable for optical receivers and EPON ONU applications.

Features

Active area of Φ60μm.
High responsivity and low dark current.
High bandwidth and excellent reliability, meeting Telcordia-GR-468-CORE standards.
100% testing and inspection.

Applications

Digital receivers up to 3.1Gbps.
EPON ONU.

Electro-Optical Characteristics
Measured at a temperature of 22±3℃, the key parameters include:

Response Spectrum: 1200-1600 nm.
Dark Current: 0.05-0.5 nA at VR=5V.
Reverse Breakdown Voltage: 30 V at IR=10μA.
Responsivity: 0.95-1.01 A/W at 1310nm and 1.0-1.1 A/W at 1550nm.
Bandwidth: 3.1 GHz at λ=1550nm.
Capacitance: 0.4-0.55 pF at f=1MHz, VR=2.0V.

Absolute Maximum Ratings

Reverse Voltage: Max 20 V.
Forward Current: Max 10 mA.
Reverse Current: Max 5 mA.
Optical Power Input: Max 10 mW.
Storage Temperature: -45 to 125℃.
Operating Temperature: -40 to 85℃.

Dimensions

Active Area: Φ60 μm.
Bond Pad: Φ60 μm.
Die Length: 240-260 μm.
Die Width: 240-260 μm.
Die Height: 110-130 μm.

Cautions

Implement ESD protective measures to prevent electrostatic damage.
Handle InP-based chips with care due to their fragility.
Avoid using tweezers; vacuum adsorption is recommended.
Carefully set bonding force and temperature to avoid chip damage.

Catalog excerpts

XSJ-10-D4-60/3.1Gbps Φ60μm Digital PIN PD Chip/PHOGRAIN-1

(P/N: XSJ-10-D4-60) Introduction This 3.1Gbps photodiode chip is InGaAs/InP PIN planar structure and top-illuminated digital photodiode chip, active area size is Φ60μm. That features is low dark current, low capacitance, high responsivity and excellent reliability. Application in 3.1Gbps and below optical receiver and EPON ONU. High responsivity. High Bandwidth. Excellent reliability: All chips have passed the qualification requirements as specified by Telcordia -GR-468-CORE. Email: [email protected]

Open the catalog to page 1

XSJ-10-D4-60/3.1Gbps Φ60μm Digital PIN PD Chip/PHOGRAIN-2

Tel: +86 755-23712706 Email: [email protected] Web: www.xinsijie.com.cn D00000581 Rev C

Open the catalog to page 2

XSJ-10-D4-60/3.1Gbps Φ60μm Digital PIN PD Chip/PHOGRAIN-3

1. Take necessary ESD protective measures, avoid to prevent electrostatic damage the chip. 2. InP-based chip are easily fragile and damaged, should be very carefully used when handling. 3. Do not handle with tweezers, recommended by vacuum adsorption. 4. Bonding force, temperature should be carefully setting, in order to avoid damage to the chip. Tel: +86 755-23712706 Email: [email protected] Web: www.xinsijie.com.cn D00000581 Rev C

Open the catalog to page 3