Catalog excerpts
(P/N: XSJ-10-D4-60) Introduction This 3.1Gbps photodiode chip is InGaAs/InP PIN planar structure and top-illuminated digital photodiode chip, active area size is Φ60μm. That features is low dark current, low capacitance, high responsivity and excellent reliability. Application in 3.1Gbps and below optical receiver and EPON ONU. High responsivity. High Bandwidth. Excellent reliability: All chips have passed the qualification requirements as specified by Telcordia -GR-468-CORE. Email: sales@xinsijie.com.cn
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Tel: +86 755-23712706 Email: sales@xinsijie.com.cn Web: www.xinsijie.com.cn D00000581 Rev C
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1. Take necessary ESD protective measures, avoid to prevent electrostatic damage the chip. 2. InP-based chip are easily fragile and damaged, should be very carefully used when handling. 3. Do not handle with tweezers, recommended by vacuum adsorption. 4. Bonding force, temperature should be carefully setting, in order to avoid damage to the chip. Tel: +86 755-23712706 Email: sales@xinsijie.com.cn Web: www.xinsijie.com.cn D00000581 Rev C
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