XSJ-10-D3-80/1.25Gbps Φ80μm Digital PIN PD Chip/PHOGRAIN

Product catalog summary

Introduction
This document describes a 1.25Gbps photodiode chip with an InGaAs/InP PIN planar structure, featuring a top-illuminated design and an active area size of Φ80μm. It is characterized by low dark current, low capacitance, high responsivity, and excellent reliability, suitable for optical receivers and EPON ONU applications.

Features

Φ80μm active area.
High responsivity.
Low dark current.
Low operating voltage.
Excellent reliability, meeting Telcordia-GR-468-CORE standards.
100% testing and inspection.

Applications

Digital receivers up to 1.25Gbps.
EPON ONU.

Electro-Optical Characteristics
Measured at a temperature of 22±3℃, the key parameters include:

Response Spectrum: 1200-1600 nm.
Dark Current: 0.05-0.5 nA at VR=5V.
Reverse Breakdown Voltage: 30 V at IR=10μA.
Forward Voltage: 0.8 V at IF=1mA.
Responsivity: 0.95-1.1 A/W at λ=1310/1550nm.
Bandwidth: 1.25 GHz at λ=1550nm.
Capacitance: 0.55-0.6 pF at f=1MHz, VR=2.0V.

Absolute Maximum Ratings

Reverse Voltage: Max 20 V.
Forward Current: Max 10 mA.
Reverse Current: Max 5 mA.
Optical Power Input: Max 10 mW.
Storage Temperature: -45 to 125 ℃.
Operating Temperature: -40 to 85 ℃.

Dimensions

Active Area: Φ80 μm.
Bond Pad: Φ80 μm.
Die Length: 240-260 μm.
Die Width: 240-260 μm.
Die Height: 110-130 μm.

Cautions

Implement ESD protective measures to prevent electrostatic damage.
Handle InP-based chips with care to avoid damage.
Use vacuum adsorption instead of tweezers for handling.
Carefully set bonding force and temperature to prevent chip damage.

Catalog excerpts

XSJ-10-D3-80/1.25Gbps Φ80μm Digital PIN PD Chip/PHOGRAIN-1

(P/N: XSJ-10-D3-80) Introduction This 1.25Gbps photodiode chip is InGaAs/InP PIN planar structure and top-illuminated digital photodiode chip, active area size is Φ80μm. That features is low dark current, low capacitance, high responsivity and excellent reliability. Application in 1.25Gbps and below optical receiver and EPON ONU. High responsivity. Excellent reliability: All chips have passed the qualification requirements as specified by Telcordia -GR-468-CORE. Email: [email protected]

Open the catalog to page 1

XSJ-10-D3-80/1.25Gbps Φ80μm Digital PIN PD Chip/PHOGRAIN-2

Tel: +86 755-23712706 Email: [email protected] Web: www.xinsijie.com.cn D00000716 Rev C

Open the catalog to page 2

XSJ-10-D3-80/1.25Gbps Φ80μm Digital PIN PD Chip/PHOGRAIN-3

1. Take necessary ESD protective measures, avoid to prevent electrostatic damage the chip. 2. InP-based chip are easily fragile and damaged, should be very carefully used when handling. 3. Do not handle with tweezers, recommended by vacuum adsorption. 4. Bonding force, temperature should be carefully setting, in order to avoid damage to the chip. Tel: +86 755-23712706 Email: [email protected] Web: www.xinsijie.com.cn D00000716 Rev C

Open the catalog to page 3