(P/N: XSJ-10-D3-80) Introduction This 1.25Gbps photodiode chip is InGaAs/InP PIN planar structure and top-illuminated digital photodiode chip, active area size is Φ80μm. That features is low dark current, low capacitance, high responsivity and excellent reliability. Application in 1.25Gbps and below optical receiver and EPON ONU. High responsivity. Excellent reliability: All chips have passed the qualification requirements as specified by Telcordia -GR-468-CORE. Email: [email protected]

Tel: +86 755-23712706 Email: [email protected] Web: www.xinsijie.com.cn D00000716 Rev C

1. Take necessary ESD protective measures, avoid to prevent electrostatic damage the chip. 2. InP-based chip are easily fragile and damaged, should be very carefully used when handling. 3. Do not handle with tweezers, recommended by vacuum adsorption. 4. Bonding force, temperature should be carefully setting, in order to avoid damage to the chip. Tel: +86 755-23712706 Email: [email protected] Web: www.xinsijie.com.cn D00000716 Rev C