Catalog excerpts
(P/N: XSJ-10-D3-70-KT) Introduction This 2Gbps photodiode chip is InGaAs/InP PIN planar structure and top-illuminated low dark current digital photodiode chip, active area size is Φ70μm. That features is low high-temperature dark current, high responsivity and excellent reliability. Application in 2Gbps and below optical receiver and EPON ONU. High responsivity. Excellent reliability: All chips have passed the qualification requirements as specified by Telcordia -GR-468-CORE. ≤2Gbps digital receiver module. Optical power monitoring. Email: sales@xinsijie.com.cn
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Tel: +86 755-23712706 Email: sales@xinsijie.com.cn Web: www.xinsijie.com.cn D00000710 Rev C
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1. Take necessary ESD protective measures, avoid to prevent electrostatic damage the chip. 2. InP-based chip are easily fragile and damaged, should be very carefully used when handling. 3. Do not handle with tweezers, recommended by vacuum adsorption. 4. Bonding force, temperature should be carefully setting, in order to avoid damage to the chip. Tel: +86 755-23712706 Email: sales@xinsijie.com.cn Web: www.xinsijie.com.cn D00000710 Rev C
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