XSJ-10-D3-70-KT/2Gbps Φ70μm Tap Digital PIN PD Chip/PHOGRAIN

Product catalog summary

Introduction
This document details a 2Gbps photodiode chip with an InGaAs/InP PIN planar structure, featuring a top-illuminated design and a low dark current. The active area size is Φ70μm, and it is designed for high responsivity and reliability, suitable for optical receivers and EPON ONU applications.

Features

Φ70μm active area.
High responsivity.
Low dark current.
Excellent reliability, meeting Telcordia-GR-468-CORE standards.
100% testing and inspection.

Applications

≤2Gbps digital receiver modules.
Mini TO CAN.
Optical power monitoring.

Electro-Optical Characteristics
Measured at a temperature of 22±3℃, the key parameters include:

Response Spectrum: 1200-1600 nm.
Dark Current: 0.02-0.2 nA at VR=5V.
Reverse Breakdown Voltage: 30 V at IR=10μA.
Forward Voltage: 1.2 V at IF=1mA.
Responsivity: 0.95-1.05 A/W at λ=1310nm and λ=1550nm.
Bandwidth: 2.0 GHz at λ=1550nm.
Capacitance: 0.65-0.8 pF at f=1MHz, VR=5.0V.

Absolute Maximum Ratings

Reverse Voltage: Max 30 V.
Forward Current: Max 10 mA.
Reverse Current: Max 5 mA.
Optical Power Input: Max 10 mW.
Storage Temperature: -45 to 125 ℃.
Operating Temperature: -40 to 85 ℃.

Dimensions

Active Area: Φ70 μm.
Bond Pad: Φ80 μm.
Die Length: 240-260 μm.
Die Width: 240-260 μm.
Die Height: 110-130 μm.

Cautions

Implement ESD protective measures to prevent electrostatic damage.
Handle InP-based chips with care due to their fragility.
Avoid using tweezers; vacuum adsorption is recommended.
Carefully set bonding force and temperature to avoid chip damage.

Catalog excerpts

XSJ-10-D3-70-KT/2Gbps Φ70μm Tap Digital PIN PD Chip/PHOGRAIN-1

(P/N: XSJ-10-D3-70-KT) Introduction This 2Gbps photodiode chip is InGaAs/InP PIN planar structure and top-illuminated low dark current digital photodiode chip, active area size is Φ70μm. That features is low high-temperature dark current, high responsivity and excellent reliability. Application in 2Gbps and below optical receiver and EPON ONU. High responsivity. Excellent reliability: All chips have passed the qualification requirements as specified by Telcordia -GR-468-CORE. ≤2Gbps digital receiver module. Optical power monitoring. Email: [email protected]

Open the catalog to page 1

XSJ-10-D3-70-KT/2Gbps Φ70μm Tap Digital PIN PD Chip/PHOGRAIN-2

Tel: +86 755-23712706 Email: [email protected] Web: www.xinsijie.com.cn D00000710 Rev C

Open the catalog to page 2

XSJ-10-D3-70-KT/2Gbps Φ70μm Tap Digital PIN PD Chip/PHOGRAIN-3

1. Take necessary ESD protective measures, avoid to prevent electrostatic damage the chip. 2. InP-based chip are easily fragile and damaged, should be very carefully used when handling. 3. Do not handle with tweezers, recommended by vacuum adsorption. 4. Bonding force, temperature should be carefully setting, in order to avoid damage to the chip. Tel: +86 755-23712706 Email: [email protected] Web: www.xinsijie.com.cn D00000710 Rev C

Open the catalog to page 3